IP Library › Granted Patent US 12,660,388
Granted Patent B2
US 12,660,388 · App. 18/615,338 · Granted Jun 16, 2026

Semiconductor device with transmissive layer and manufacturing method thereof

Inventors: David Clark (Ipswich, GB); Curtis Zwenger (Chandler, AZ)
Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE, LTD.
H10H20/855H01L21/563H01L21/6835H01L24/00H10H20/84H01L24/16H01L24/32H01L24/73H01L24/92H01L2221/68345H01L2224/13101H01L2224/16225H01L2224/73204H01L2224/73253H01L2224/81005H01L2224/81203H01L2224/81224H01L2224/81815H01L2224/92125H01L2924/00014H01L2924/15311H01L2924/18161H01L2924/3511H10H20/857
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Quick Facts
Patent No.
US 12,660,388
App. No.
18/615,338
Granted
Jun 16, 2026
Kind
B2
Abstract

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that that comprises a transparent, translucent, non-opaque, or otherwise optically-transmissive, external surface.

Claims (49)

1 . A semiconductor device, comprising:

a redistribution structure comprising a redistribution structure top side and a redistribution structure bottom side that is opposite the redistribution structure top side;

a semiconductor die comprising a die top side and a die bottom side that is opposite the die top side, the semiconductor die including a sensor configured to receive radiation via the die top side;

a mold material over the redistribution structure top side and contacting the semiconductor die; and

a transmissive layer over the die top side, wherein the transmissive layer permits radiation to pass through the transmissive layer to the sensor via the die top side.

2 . The semiconductor device of claim 1 , comprising:

conductive interconnection structures on the redistribution structure bottom side; and

wherein one or more of the conductive interconnection structures is operatively coupled to the sensor via the redistribution structure.

3 . The semiconductor device of claim 1 , wherein the sensor comprises an image sensor, an optical sensor, an optical receiver, or other optical device that senses light.

4 . The semiconductor device of claim 1 , wherein the sensor is configured to sense light from the radiation received via the die top side.

5 . The semiconductor device of claim 1 ,

wherein:

the semiconductor die comprises die lateral sides that join the die top side to the die bottom side; and

the mold material laterally surrounds and contacts the die lateral sides.

6 . The semiconductor device of claim 5 , wherein the transmissive layer is over a top side of the mold material.

7 . The semiconductor device of claim 5 , wherein the transmissive layer contacts a top side of the mold material.

8 . The semiconductor device of claim 1 , comprising:

conductive bumps coupling the die bottom side to the redistribution structure top side; and

an underfill material between the redistribution structure top side and the die bottom side; and

wherein the underfill material contacts and encapsulates the conductive bumps.

9 . The semiconductor device of claim 8 , comprising wherein:

the mold material contacts the underfill material;

the semiconductor die comprises die lateral sides that join the die top side to the die bottom side; and

the mold material laterally surrounds and contacts the die lateral sides.

10 . The semiconductor device of claim 9 , wherein the mold material comprises a material different than the underfill material.

11 . The semiconductor device of claim 1 , wherein the mold material encapsulates the semiconductor die, but does not cover at least a portion of the die top side.

12 . A semiconductor device, comprising:

a redistribution structure comprising a redistribution structure top side and a redistribution structure bottom side that is opposite the redistribution structure top side;

conductive interconnection structures on the redistribution structure bottom side;

a semiconductor die operatively coupled to the redistribution structure, the semiconductor die comprising a die top side, a die bottom side that is opposite the die top side, and die lateral sides that join the die top side to the die bottom side;

a mold material over the redistribution structure top side, wherein the mold material laterally surrounds and contacts the die lateral sides;

an optically-transmissive layer over the die top side; and

an optically-transmissive material between the die top side and the optically-transmissive layer;

wherein the semiconductor die includes a sensor operatively coupled to the conductive interconnection structures via the redistribution structure;

wherein the optically-transmissive layer permits light to pass through the optically-transmissive layer to the die top side; and

wherein the sensor is configured to sense the light that passes through to the die top side.

13 . The semiconductor device of claim 12 , wherein a bottom side of the optically-transmissive layer is over a top side of the mold material.

14 . The semiconductor device of claim 12 , wherein the sensor comprises an image sensor.

15 . The semiconductor device of claim 12 , comprising conductive bumps that couple the semiconductor die to the redistribution structure.

16 . The semiconductor device of claim 12 , wherein the mold material laterally surrounds the optically-transmissive material.

17 . The semiconductor device of claim 16 , wherein the mold material comprises a material different than the optically-transmissive material.

18 . A method of forming a semiconductor device, the method comprising:

providing a redistribution structure comprising a redistribution structure top side and a redistribution structure bottom side that is opposite the redistribution structure top side;

providing a semiconductor die comprising a die top side and a die bottom side coupled to the redistribution structure top side, wherein the semiconductor die includes a sensor configured to receive radiation via the die top side;

providing a mold material over the redistribution structure top side that laterally surrounds and contacts the semiconductor die;

providing a transmissive layer over the die top side that permits radiation to pass through the transmissive layer to the die top side; and

providing an optically-transmissive material between the transmissive layer and the die top side.

19 . The method of claim 18 , wherein the sensor comprises an image sensor, an optical sensor, an optical receiver, or other optical device that senses light.

20 . The method of claim 18 , wherein the transmissive layer contacts a top side of the mold material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 22, 2024
From: CLARK, DAVID; ZWENGER, CURTIS
To: AMKOR TECHNOLOGY, INC.
Reel/Frame 067179/0550 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 22, 2024
From: AMKOR TECHNOLOGY, INC.
To: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
Reel/Frame 067179/0681 →
Continuity (6)
Continuation 17902035 · Sep 2, 2022
Continuation 17026752 · Sep 21, 2020
Continuation 16686516 · Nov 18, 2019
Continuation 15947245 · Apr 6, 2018
Continuation 15256970 · Sep 6, 2016
Related Publication 20240387785A1 · Nov 21, 2024
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