Reactor system for sublimation of pre-clean byproducts and method thereof
A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.
1. A reactor system comprising:
a reaction chamber assembly defining an interior chamber;
a susceptor within the interior chamber;
a wafer tray seated on the susceptor and adapted to carry a wafer; and
a heating element in the wafer tray adapted to heat the wafer tray to heat the wafer to a sublimation temperature;
wherein the wafer tray has a mass in a range of about 0.4 kilograms to about 1.5 kilograms; and
wherein the wafer tray comprises a wafer tray recess configured to receive and retain the wafer, the wafer tray recess having an upwardly facing surface having a roughness average (Ra) of 0.4 μm or less across the entire upwardly facing surface.
2. The reactor system of claim 1 wherein the wafer tray has a thickness which is no more than 5 millimeters.
3. The reactor system of claim 1 wherein the wafer tray comprises one of aluminum nitride and boron nitride.
4. The reactor system of claim 1 in combination with the wafer, which has a bottom surface; wherein the wafer tray is within a susceptor recess; and further comprising:
the susceptor recess formed in the susceptor extending downardly from a top surface of the susceptor and having a vertical recess depth; and
a vertical distance from the bottom surface of the wafer to a top surface of the heating element, wherein the vertical distance is less than the recess depth.
5. The reactor system of claim 4 wherein the vertical distance is no more than about 3.5 mm.
6. The reactor system of claim 1 in combination with the wafer;
wherein the wafer has a native oxide layer and is carried by the wafer tray; and
a power supply is operatively coupled to the heating element and capable of heating the heating element such that the heating element is capable of heating the wafer to a sublimation temperature of the oxide layer.
7. The reactor system of claim 1 wherein the susceptor includes no heating elements.
8. The reactor system of claim 1 further comprising:
a power supply operatively coupled to the heating element and capable of heating the heating element at a temperature ramping rate in a range of about 50° C./second to about 200° C./second.