A power module comprises a chip, a power lead electrically connected to the chip and at least one substrate, each of at least one substrate including an outer metal layer bonded to an outer side portion of an insulating layer and an inner metal layer bonded to an inner side portion of the insulating layer, respectively, wherein the outer metal layer and the inner metal layer have different perimeters so that the outer metal layer and the inner metal layer have asymmetric structures.
1. A power module comprising:
a chip;
a power lead electrically connected to the chip; and
at least one substrate, each of at least one substrate including an outer metal layer bonded to an outer side portion of an insulating layer and an inner metal layer bonded to an inner side portion of the insulating layer disposed between the outer metal layer and the inner metal layer, respectively, wherein the outer metal layer and the inner metal layer have different distance between two end portions of the metal layers in a horizontal direction perpendicular to a stack direction of the metal layers so that the outer metal layer and the inner metal layer have asymmetric structures,
wherein the distance of the outer metal layer is provided to be smaller than the distance of the inner metal layer so that the outer metal layer and the inner metal layer have a same volume ratio.
2. The power module of claim 1 , wherein the at least one substrate comprises an upper substrate and a lower substrate,
wherein the upper substrate is disposed at a portion above the chip and includes: a first insulating layer; and a first outer metal layer and a first inner metal layer bonded to an upper surface and a lower surface of the first insulating layer, respectively, and
the lower substrate is disposed at a portion under the chip and includes: a second insulating layer; and a second outer metal layer and a second inner metal layer bonded to an upper surface and a lower surface of the second insulating layer, respectively.
3. The power module of claim 2 , further comprising a mold part integrally molding the chip, the power lead, the upper substrate, and the lower substrate,
wherein the power lead is connected to the first inner metal layer or the second inner metal layer and has a portion extending to an outside of the mold part.
4. The power module of claim 1 , wherein the inner metal layer includes a pattern to provide an electrical connection relationship with the chip.
5. The power module of claim 4 , wherein a perimeter of the outer metal layer is provided to be smaller than the perimeter of the inner metal layer based on the pattern of the inner metal layer.
6. The power module of claim 1 , wherein the outer metal layer is provided to have a smaller thickness than the inner metal layer so as to have the same volume ratio as the inner metal layer.
7. The power module of claim 6 , wherein the outer metal layer has the distance and the thickness of the outer metal layer are adjusted based on an insulation distance between the outer metal layer and the power lead.
8. The power module of claim 6 , wherein the outer metal layer is configured to have the same volume ratio with respect to the inner metal layer by reducing a width and a length of the outer metal layer by a same length.
9. The power module of claim 4 , wherein the outer metal layer is provided with the smaller distance than the inner metal layer, wherein the chip and the pattern of the inner metal layer are provided to be all included within an area of the outer metal layer.