Granted Patent B2

US 12,726,733 · App. 18/919,325 · Granted Sep 1, 2026

Inventors: Andreas Suess (San Jose, CA); Sangjoo Lee (Sunnyvale, CA)

Assignee: OMNIVISION TECHNOLOGIES, INC.

H04N25/77H04N23/667H04N25/11H04N25/134H04N25/135H04N25/42H04N25/47H04N25/621H04N25/78H10F39/182H10F39/8023H10F39/8053H10F39/8063H04N25/79

Abstract

Claims (109)

1 . A pixel arrangement, comprising:

a pixel including—

a first photosensor configured to photogenerate first charge based at least in part on first light incident on the first photosensor;

a second photosensor different from the first photosensor and configured to photogenerate second charge based at least in part on second light incident on the second photosensor;

a floating diffusion;

a first event vision sensor (EVS) connection coupling the pixel to first EVS readout circuitry and configured to receive the first charge from the first photosensor;

a second EVS connection coupling the pixel to second EVS readout circuitry and configured to receive the second charge from the second photosensor;

a first transfer transistor selectively coupling the first photosensor to the floating diffusion based at least in part on a first transfer control signal;

a second transfer transistor configured, based at least in part on a second transfer control signal, to selectively couple the first photosensor to the first EVS connection such that the first photosensor is selectively couplable to the first EVS readout circuitry independently from the second EVS connection;

a third transfer transistor selectively coupling the second photosensor to the floating diffusion based at least in part on a third transfer control signal different from the first and second transfer control signals; and

a fourth transfer transistor configured, based at least in part on a fourth transfer control signal, to selectively couple the second photosensor to the second EVS connection such that the second photosensor is selectively couplable to the second EVS readout circuitry independently form the first EVS connection.

2 . The pixel arrangement of claim 1 , wherein the fourth transfer control signal is different from the first, second, and third transfer control signals.

3 . The pixel arrangement of claim 1 , wherein:

the pixel is a first pixel and the floating diffusion is a first floating diffusion; and

the pixel arrangement further includes a second pixel different from the first pixel, the second pixel including—

a third photosensor configured to photogenerate third charge based at least in part on third light incident on the third photosensor;

a second floating diffusion;

a third EVS connection coupling the pixel to third EVS readout circuitry and configured to receive the third charge from the third photosensor;

a fifth transfer transistor selectively coupling the third photosensor to the second floating diffusion based at least in part on a fifth transfer control signal; and

a sixth transfer transistor selectively coupling the third photosensor to the third EVS connection based at least in part on a sixth transfer control signal.

4 . The pixel arrangement of claim 3 , wherein the third EVS readout circuitry is the second EVS readout circuitry, and wherein the third EVS connection is the second EVS connection.

5 . The pixel arrangement of claim 4 , wherein:

the first pixel is disposed under a first color filter such that the first pixel corresponds to a first color;

the second pixel is disposed under a second color filter such that the second pixel corresponds to a second color different from the first color; and

the third EVS readout circuitry is configurable to receive image charge photogenerated by the second photosensor, the third photosensor, and both the second and third photosensors via the third EVS connection.

6 . The pixel arrangement of claim 4 , wherein the third EVS connection is positioned between the second photosensor and the third photosensor.

7 . The pixel arrangement of claim 1 , wherein the pixel further includes:

a third photosensor configured to photogenerate third charge based at least in part on third light incident on the third photosensor;

a fourth photosensor configured to photogenerate fourth charge based at least in part on fourth light incident on the fourth photosensor;

a third EVS connection coupling the pixel to third EVS readout circuitry and configured to receive the third charge from the third photosensor;

a fourth EVS connection coupling the pixel to fourth EVS readout circuitry and configured to receive the fourth charge from the fourth photosensor;

a fifth transfer transistor selectively coupling the third photosensor to the floating diffusion based at least in part on a fifth transfer control signal;

a sixth transfer transistor selectively coupling the third photosensor to the third EVS connection based at least in part on a sixth transfer control signal; and

a seventh transfer transistor selectively coupling the fourth photosensor to the floating diffusion based at least in part on a seventh transfer control signal.

8 . The pixel arrangement of claim 7 , wherein the pixel further includes an eighth transfer transistor selectively coupling the fourth photosensor to the fourth EVS connection based at least in part on an eighth transfer control signal.

9 . The pixel arrangement of claim 7 , wherein the first photosensor, the second photosensor, the third photosensor, and the fourth photosensor are positioned relative to the floating diffusion such that they surround the floating diffusion.

10 . The pixel arrangement of claim 7 , wherein (a) the first photosensor and the fourth photosensor are positioned on opposite sides of the floating diffusion and are diagonally offset from one another, and (b) the second photosensor and the third photosensor are positioned on opposite sides of the floating diffusion and are diagonally offset from one another.

11 . The pixel arrangement of claim 1 , wherein the second EVS readout circuitry is the first EVS readout circuitry.

12 . The pixel arrangement of claim 1 , wherein the floating diffusion and the first EVS connection are diagonally offset from one another, and wherein the first photosensor is positioned between the floating diffusion and the first EVS connection.

13 . The pixel arrangement of claim 12 , wherein the floating diffusion and the second EVS connection are diagonally offset from one another, and wherein the first EVS connection and the second EVS connection are diagonally offset from one another.

14 . The pixel arrangement of claim 12 , wherein (a) the first photosensor is positioned between the floating diffusion and the first EVS connection, and (b) the second photosensor is positioned between the floating diffusion and the second EVS connection.

15 . The pixel arrangement of claim 12 , wherein, while integrating the first charge, the second transfer transistor is activatable to provide an anti-blooming path to the first EVS readout circuitry via the first EVS connection.

16 . A pixel arrangement disposed in a semiconductor material, the pixel arrangement comprising:

a pixel including—

a floating diffusion disposed in the semiconductor material at a central region of the semiconductor material;

a plurality of photosensors disposed in the semiconductor material at locations distributed about the floating diffusion;

a plurality of first transfer transistors, wherein each first transfer transistor of the plurality of first transfer transistors (a) is disposed in the semiconductor material at a location between the floating diffusion and a respective photosensor of the plurality of photosensors, and (b) is configured to selectively couple the respective photosensor to the floating diffusion;

a plurality of event vision sensor (EVS) connections disposed at least partially in the semiconductor material and usable to couple a respective one of the plurality of photosensors to EVS readout circuitry, wherein the plurality of EVS connections include a first EVS connection and a second EVS connection are diagonally offset from one another; and

a plurality of second transfer transistors, wherein each second transfer transistor of the plurality of second transfer transistors (a) is disposed in the semiconductor material at a location between a corresponding one of the plurality of photosensors and a corresponding one of the plurality of EVS connections, and (b) is configured to selectively couple the corresponding one of the plurality of photosensors to the corresponding one of the plurality of EVS connections.

17 . The pixel arrangement of claim 16 , wherein:

the pixel is a first pixel, the floating diffusion is a first floating diffusion, the central region is a first central region, the plurality of photosensors is a first plurality of photosensors, the plurality of first transfer transistors is a first plurality of first transfer transistors, the plurality of EVS connections is a first plurality of EVS connections, and the plurality of second transfer transistors is a first plurality of second transfer transistors; and

the pixel arrangement further comprises a second pixel neighboring the first pixel, the second pixel including—

a second floating diffusion disposed in the semiconductor material at a second central region of the semiconductor material;

a second plurality of photosensors disposed in the semiconductor material at locations distributed about the second floating diffusion;

a second plurality of first transfer transistors, wherein each first transfer transistor of the second plurality of first transfer transistors (a) is disposed in the semiconductor material at a location between the second floating diffusion and a respective photosensor of the second plurality of photosensors, and (b) is configured to selectively couple the respective photosensor to the second floating diffusion;

a second plurality of EVS connections disposed at least partially in the semiconductor material and usable to couple a respective one of the second plurality of photosensors to the EVS readout circuitry; and

a second plurality of second transfer transistors, wherein each second transfer transistor of the second plurality of second transfer transistors (a) is disposed in the semiconductor material at a location between a corresponding one of the second plurality of photosensors and a corresponding one of the second plurality of EVS connections, and (b) is configured to selectively couple the corresponding one of the second plurality of photosensors to the corresponding one of the second plurality of EVS connections.

18 . The pixel arrangement of claim 17 , wherein the first plurality of EVS connections and the second plurality of EVS connections include at least one EVS connection in common such that the at least one EVS connection is shared between the first pixel and the second pixel.

19 . The pixel arrangement of claim 16 , further comprising a microlens disposed over the plurality of photosensors.

20 . The pixel arrangement of claim 16 , further comprising:

a first microlens disposed over a first subset of the plurality of photosensors; and

a second microlens different from the first microlens and disposed over a second subset of the plurality of photosensors.

21 . A pixel, comprising:

a first photosensor configured to photogenerate first charge based at least in part on first light incident on the first photosensor;

a second photosensor different from the first photosensor and configured to photogenerate second charge based at least in part on second light incident on the second photosensor;

a floating diffusion configured to receive the first charge from the first photosensor and the second charge from the second photosensor;

a first event vision sensor (EVS) connection usable to couple the pixel to first EVS readout circuitry and configured to receive the first charge from the first photosensor;

a second EVS connection usable to couple the pixel to second EVS readout circuitry and configured to receive the second charge from the second photosensor; and

a mode switch including—

a first switch selectively coupling the first photosensor to the floating diffusion,

a second switch selectively coupling the first photosensor to the first EVS connection independently from the second EVS connection,

a third switch selectively coupling the second photosensor to the floating diffusion, and

a fourth switch selectively coupling the second photosensor to the second EVS connection independently from the first EVS connection,

wherein the mode switch is controllable to transition the pixel between (i) a first mode in which the pixel is usable to generate a first output corresponding to intensity information of the first light, the second light, or both the first light and the second light; and (ii) a second mode in which the pixel is usable to generate a second output corresponding to contrast information of the first light, the second light, or both the first light and the second light.

22 . The pixel of claim 21 , wherein:

the first output corresponds to intensity information of both the first light and the second light; and

to transition the pixel to the first mode in which the pixel is usable to generate the first output, the mode switch is controllable to activate the first switch and the third switch such that the first photosensor and the second photosensor are coupled to the floating diffusion.

23 . The pixel of claim 22 , wherein, to transition the pixel to the first mode in which the pixel is usable to generate the first output, the mode switch is controllable to activate the first switch and the third switch such that the first photosensor and the second photosensor are simultaneously coupled to the floating diffusion.

24 . The pixel of claim 22 , wherein, to transition the pixel to the first mode in which the pixel is usable to generate the first output, the mode switch is controllable to activate the first switch and the third switch such that the first photosensor and the second photosensor are coupled to the floating diffusion at different times.

25 . The pixel of claim 21 , wherein:

the second output corresponds to contrast information of both the first light and the second light; and

to transition the pixel to the second mode in which the pixel is usable to generate the second output, the mode switch is controllable to activate the second switch and the fourth switch such that the first photosensor and the second photosensor are coupled to the first EVS connection and the second EVS connection, respectively.

26 . The pixel of claim 21 , wherein:

the first output corresponds to intensity information of the first light;

the second output corresponds to contrast information of the second light;

the pixel is usable to simultaneously generate the first output and the second output while the pixel is in the second mode; and

to transition the pixel to the second mode in which the pixel is usable to simultaneously generate the first output and the second output, the mode switch is controllable to (i) activate the first switch such that the first photosensor is coupled to the floating diffusion, and (ii) activate the fourth switch such that the second photosensor is coupled to the second EVS connection.

27 . The pixel of claim 21 , wherein:

the first switch includes a first transfer transistor configured to selectively couple the first photosensor to the floating diffusion based at least in part on a first transfer control signal; and

the third switch includes a second transfer transistor configured to selectively couple the second photosensor to the floating diffusion based at least in part on a second transfer control signal different from the first transfer control signal.

28 . The pixel of claim 27 , wherein:

the second switch includes a third transfer transistor configured to selectively couple the first photosensor to the first EVS connection based at least in part on a third transfer control signal different from the first and second transfer control signals; and

the fourth switch includes a fourth transfer transistor configured to selectively couple the second photosensor to the second EVS connection based at least in part on a fourth transfer control signal different from the first, second, and third transfer control signals.

29 . The pixel of claim 21 , wherein:

the first switch includes a first transfer transistor configured to selectively couple the first photosensor to the floating diffusion based at least in part on a first transfer control signal; and

the second switch includes a second transfer transistor configured to selectively couple the first photosensor to the first EVS connection based at least in part on a second transfer control signal different from the first transfer control signal.

30 . The pixel of claim 21 , further comprising:

a third photosensor configured to photogenerate third charge based at least in part on third light incident on the third photosensor; and

a fifth switch selectively coupling the third photosensor to the floating diffusion.

31 . The pixel of claim 30 , further comprising a third EVS connection usable to couple the pixel to third EVS readout circuitry and configured to receive the third charge from the third photosensor.

32 . The pixel of claim 31 , further comprising a sixth switch selectively coupling the third photosensor to the third EVS connection.

33 . The pixel of claim 21 , further comprising:

a fourth photosensor configured to photogenerate fourth charge based at least in part on fourth light incident on the fourth photosensor; and

a sixth switch selectively coupling the fourth photosensor to the floating diffusion.

34 . The pixel of claim 33 , further comprising:

a third EVS connection usable to couple the pixel to third EVS readout circuitry and configured to receive the third charge from the third photosensor;

a fourth EVS connection usable to couple the pixel to fourth EVS readout circuitry and configured to receive the fourth charge from the fourth photosensor;

a seventh switch selectively coupling the third photosensor to the third EVS connection; and

an eighth switch selectively coupling the fourth photosensor to the fourth EVS connection.

Assignments (1)

Continuity (2)

References Cited (104)