Patent Assignment
Reel/Frame 024456/0001
Assignment of Assignor's Interest
Recorded: 2010-05-28
Pages: 386
Assignor
INFINEON TECHNOLOGIES AG
Executed: 2006-04-25
Assignee
QIMONDA AG
GUSTAV-HEINEMANN-RING 212, MUNICH, 81739, GERMANY
Covered Properties
(20)
Manufacturing Method for a Self-Aligned Through Hole and Semiconductor Structure
Patent:
5,460,690 →
Application:
08/373,006 →
Formation of Silicided Junctions in Deep Submicron Mosfets by Defect Enhanced COS12 Formation
Patent:
5,780,929 →
Application:
08/744,132 →
Method of Manufacturing Metal Interconnect Structure for an Integrated Circuit with Improved Electromigration Reliability
Patent:
5,798,301 →
Application:
08/841,030 →
Method to Minimize Watermarks on Silicon Substrates
Patent:
5,932,493 →
Application:
08/929,590 →
Crack Stops
Patent:
6,025,639 →
Application:
09/061,538 →
Metallization Etching Techniques for Reducing Post-Etch Corrosion of Metal Lines
Patent:
6,177,353 →
Application:
09/153,390 →
Method of Controlled Chemical Vapor Deposition of a Metal Oxide Ceramic Layer
Patent:
6,787,186 →
Application:
09/210,912 →
Crack Stops
Patent:
6,271,578 →
Application:
09/218,882 →
Crack Stops
Patent:
6,084,287 →
Application:
09/241,741 →
Dummy Patterns for Aluminum Chemical Polishing (Cmp)
Patent:
6,344,409 →
Application:
09/523,862 →
Circuit Configuration for the Interference- Free Initialization of Delayed Locked Loop Circuits with Fast Lock
Patent:
6,639,958 →
Application:
09/524,240 →
Semiconductor Device Structure with Hydrogen-Rich Layer for Facilitating Passivation of Surface States
Patent:
6,483,172 →
Application:
09/562,217 →
Optical Structure and Method for Producing the Same
Patent:
6,614,575 →
Application:
09/636,521 →
System and Method for Managing Risk and Opportunity
Patent:
7,305,351 →
Application:
09/680,923 →
Negative Ion Implant Mask Formation for Self-Aligned, Sublithographic Resolution Patterning for Single-Sided Vertical Device Formation
Resistive Ferroelectric Memory Cell
Low Temperature Chemical Vapor Deposition Process for Forming Bismuth-Containing Ceramic Thin Films Useful in Ferroelectric Memory Devices
Spacer Formation Process Using Oxide Shield
Patent:
6,548,344 →
Application:
09/987,956 →
Circuit with Buried Strap Including Liner
Hybrid Memory Cell for Spin-Polarized Electron Current Induced Switching and Writing/Reading Process Using Such Memory Cell
Related Assignments
(22)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 8, 2003
From: GRUNING, ULRIKE; LEHMANN, VOLKER; STENGI, REINHARD; WENDT, HERMANN
To: INFINEON TECHNOLOGIES AG
Reel/Frame 014229/0528 →
Assignment of Assignor's Interest
Aug 19, 2003
From: HOHLER, RAINER; VON BORCKE, MATHIAS
To: INFINEON TECHNOLOGIES AG
Reel/Frame 014397/0089 →
Change of Name
Feb 25, 2004
From: INFINEON TECHNOLOGIES CORPORATION
To: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
Reel/Frame 014371/0406 →
Assignment of Assignor's Interest
Apr 2, 2004
From: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
To: INFINEON TECHNOLOGIES AG
Reel/Frame 014486/0684 →
Assignment of Assignor's Interest
Apr 23, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: INFINEON TECHNOLOGIES AG
Reel/Frame 014557/0147 →
Assignment of Assignor's Interest
Apr 30, 2004
From: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
To: INFINEON TECHNOLOGIES AG
Reel/Frame 014590/0798 →
Assignment of Assignor's Interest
Sep 3, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: INFINEON TECHNOLOGIES AG
Reel/Frame 015073/0570 →
Assignment of Assignor's Interest
Nov 18, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: INFINEON TECHNOLOGIES AG
Reel/Frame 015386/0643 →
Assignment of Assignor's Interest
Oct 10, 2005
From: SIEMENS AKTIENGESELLSCHAFT
To: INFINEON TECHNOLOGIES AG
Reel/Frame 016621/0875 →
Change of Name
Jul 6, 2010
From: SIEMENS COMPONENTS, INC.
To: SIEMENS MICROELECTRONICS, INC.
Reel/Frame 024640/0060 →
Security Interest
May 1, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032815/0852 →
Security Interest
May 2, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032812/0192 →
Assignment of Assignor's Interest
Feb 4, 2015
From: ADVANCED TECHNOLOGY MATERIALS, INC.
To: ENTEGRIS, INC.
Reel/Frame 034894/0025 →
Assignment of Assignor's Interest
May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
Assignment of Assignor's Interest
Jul 28, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036201/0432 →
Assignment of Assignor's Interest
Aug 7, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036305/0890 →
Assignment of Assignor's Interest
Aug 14, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036353/0134 →
Assignment of Assignor's Interest
Dec 7, 2015
From: INFINEON TECHNOLOGIES AG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 037221/0885 →
Release of Security Interest
Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.
Reel/Frame 047477/0032 →
Release of Security Interest
Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.
Reel/Frame 047477/0151 →
Security Interest
Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →
Assignment of Patent Security Interest Recorded at Reel/Frame 048811/0679
Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →