Patent Assignment
Reel/Frame 015386/0643
Assignment of Assignor's Interest
Recorded: 2004-11-18
Pages: 6
Assignor
SIEMENS AKTIENGESELLSCHAFT
Executed: 2004-10-26
Assignee
INFINEON TECHNOLOGIES AG
ST.-MARTIN-STR. 53, MUNCHEN, 81669, GERMANY
Covered Properties
(32)
Conductor Track Configuration for Very Large-Scale Integrated Circuits
Patent:
5,289,037 →
Application:
07/883,113 →
Formation of Silicided Junctions in Deep Sub-Micron Mosfets by Defect Enhanced COSI2 Formation
Patent:
5,344,793 →
Application:
08/026,944 →
Method for the Anisotropic Etching of an Aluminiferous Layer
Patent:
5,480,051 →
Application:
08/235,987 →
Method for Depositing a Layer on a Substrate Wafer with a Sputtering Process
Patent:
5,505,833 →
Application:
08/272,589 →
Polysilicon/Polycide Etch Process for Sub-Micron Gate Stacks
Patent:
5,529,197 →
Application:
08/359,789 →
Plasma Etching Method
Patent:
5,591,301 →
Application:
08/362,398 →
Circuit Configuration for Preparing Analog Signals for a Boundary Scan Test Process
Patent:
5,563,523 →
Application:
08/369,181 →
Metal Interconnect Structure for an Integrated Circuit with Improved Electromigration Reliability
Patent:
5,641,992 →
Application:
08/513,494 →
Protective Configuration Against Electrostatic Discharges in Semiconductor Components Controllable by Field Effect
Patent:
5,672,893 →
Application:
08/590,931 →
Method for Depositing a Silicon Oxide Layer
Patent:
5,965,203 →
Application:
08/643,599 →
Energy Relieving Crack Stop
Patent:
5,834,829 →
Application:
08/706,586 →
Formation of Silicided Junctions in Deep Submicron Mosfets by Defect Enhanced COS12 Formation
Patent:
5,780,929 →
Application:
08/744,132 →
Geometrical Control of Device Corner Threshold
Patent:
5,858,866 →
Application:
08/753,234 →
Distribution Plate for a Reaction Chamber with Multiple Gas Inlets and Separate Mass Flow Control Loops
Patent:
6,294,026 →
Application:
08/756,670 →
Method of Manufacturing Metal Interconnect Structure for an Integrated Circuit with Improved Electromigration Reliability
Patent:
5,798,301 →
Application:
08/841,030 →
Methods for Metal Etching with Reduced Sidewall Build Up During Integrated Circuit Manufacturing
Patent:
5,846,884 →
Application:
08/879,727 →
Mitigation of Cmp-Induced Bpsg Surface Damage by an Integrated Anneal and Silicon Dioxide Deposition
Patent:
5,915,175 →
Application:
08/884,119 →
Method to Minimize Watermarks on Silicon Substrates
Patent:
5,932,493 →
Application:
08/929,590 →
Method of Maximizing Chip Yield for Semiconductor Wafers
Patent:
6,070,004 →
Application:
08/937,764 →
Dishing Resistance
Patent:
5,928,959 →
Application:
08/940,808 →
Method for Quantifying Proximity Effects by Measuring Device Performance
Patent:
6,174,741 →
Application:
08/994,273 →
Non-Destructive Method and Device for Measuring the Depth of a Buried Interface
Patent:
6,124,141 →
Application:
09/004,074 →
Dummy Patterns for Aluminum Chemical Polishing (Cmp)
Patent:
6,093,631 →
Application:
09/007,911 →
High Throughput A1-Cu Thin Film Sputtering Process on Small Contact via for Manufacturable Beol Wiring
Patent:
6,140,236 →
Application:
09/063,094 →
Geometrical Control of Device Corner Threshold
Patent:
5,998,852 →
Application:
09/078,517 →
Cmos Device
Patent:
6,160,295 →
Application:
09/091,152 →
Geometrical Control of Device Corner Threshold
Patent:
6,022,796 →
Application:
09/120,190 →
Prevention of Photoresist Poisoning from Dielectric Antireflective Coating in Semiconductor Fabrication
Patent:
6,103,456 →
Application:
09/120,629 →
Measurement System and Method for Measuring Critical Dimensions Using Ellipsometry
Patent:
6,031,614 →
Application:
09/204,402 →
Dummy Patterns for Aluminum Chemical Polishing (Cmp)
Patent:
6,344,409 →
Application:
09/523,862 →
Semiconductor Device Structure with Hydrogen-Rich Layer for Facilitating Passivation of Surface States
Patent:
6,483,172 →
Application:
09/562,217 →
Wafer Processing System
Patent:
6,542,837 →
Application:
09/574,823 →
Related Assignments
(15)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 5, 1996
From: DINKEL, BETTINA A.
To: SIEMENS COMPONENTS, INC.
Reel/Frame 008152/0801 →
Assignment of Assignor's Interest
Sep 3, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: INFINEON TECHNOLOGIES AG
Reel/Frame 015073/0570 →
Assignment of Assignor's Interest
Mar 11, 2008
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 020627/0141 →
Assignment of Assignor's Interest
Jan 12, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023768/0001 →
Assignment of Assignor's Interest
Jan 13, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023828/0001 →
Assignment of Assignor's Interest
Jan 13, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023773/0001 →
Assignment of Assignor's Interest
Jan 14, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023853/0401 →
Assignment of Assignor's Interest
Jan 15, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023821/0535 →
Assignment of Assignor's Interest
May 28, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 024456/0001 →
Change of Name
Jul 6, 2010
From: SIEMENS COMPONENTS, INC.
To: SIEMENS MICROELECTRONICS, INC.
Reel/Frame 024640/0060 →
Assignment of Assignor's Interest
May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
Assignment of Assignor's Interest
Jul 28, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036201/0432 →
Assignment of Assignor's Interest
Aug 6, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036293/0932 →
Assignment of Assignor's Interest
Aug 7, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036305/0890 →
Assignment of Assignor's Interest
Dec 7, 2015
From: INFINEON TECHNOLOGIES AG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 037221/0885 →