Granted Patent B2

US 12,471,405 · App. 17/761,368 · Granted Nov 11, 2025

Inventors: Mazid Munshi (Trondheim, NO); Helge Weman (Ecublens, CH); Bjorn-Ove M. Fimland (Trondheim, NO)

Assignee: Squidled SAS

H10F77/1437H10F71/1276H10F77/12485H10F77/146H10F77/164H10H20/01335H10H20/812H10H20/8252

Abstract

Claims (22)

1 . A light-emitting diode or photodetector device comprising:

a plurality of group III-V nanowires or nanopyramids epitaxially grown on a polycrystalline or single-crystalline graphene layer,

said polycrystalline or single-crystalline graphene layer being directly supported on a crystalline substrate such as a group III-V semiconductor, sapphire, SiC, Si, Ga 2 O 3 , or diamond substrate,

wherein the epitaxy, crystal orientation, and facet orientations of said nanowires or nanopyramids are directed by the crystalline substrate;

said nanowires or nanopyramids having a p-n or p-i-n junction;

a first electrode in electrical contact with said polycrystalline or single-crystalline graphene layer;

a second electrode in contact with the top of at least a portion of said nanowires or nanopyramids, optionally in the form of a light-reflective layer;

wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor.

2 . The device as claimed in claim 1 , wherein said nanowires or nanopyramids are grown through the holes of a hole-patterned mask on said polycrystalline or single-crystalline graphene layer.

3 . The device as claimed in claim 1 , wherein the polycrystalline or single-crystalline graphene layer is 15 Angstroms or less in thickness.

4 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids comprise GaN, AlGaN, InGaN, or AlInGaN.

5 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids comprise a multiple quantum well, such as an Al(In)GaN MQW.

6 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids contain an electron blocking layer, which could be either a single barrier or a multiquantum barrier.

7 . The device as claimed in claim 1 , wherein the device emits or absorbs in the UV spectrum.

8 . The device as claimed in claim 1 , wherein the p-n or p-i-n junction within a nanowire is axial or radial.

9 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids comprise a tunnel junction with a GaN, AlN, AlGaN, or InGaN barrier layer.

10 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids comprise an (Al)GaN/Al(Ga)N superlattice.

11 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids comprise AlGaN with an increasing or decreasing concentration of Al along a direction, such as axially, in the nanowire or nanopyramid.

12 . The device as claimed in claim 1 , wherein the nanowires or nanopyramids are doped using Si, Mg, Zn, or Be.

13 . The device as claimed in claim 1 , wherein the space between the nanowires or nanopyramids is filled by a supporting and electrically isolating filler material transparent to the light emitted or absorbed in said device.

14 . The device as claimed in claim 1 , wherein, in use, light is emitted or absorbed in a direction substantially parallel to but opposite from the growth direction of the nanowires.

15 . The device as claimed in claim 1 , wherein said polycrystalline or single-crystalline graphene layer is a polycrystalline graphene layer.

Assignments (1)

Priority Claims (2)

Continuity (1)

References Cited (266)