Bonded structure with interconnect structure
A bonded structure is disclosed. The bonded structure can include an interconnect structure. The bonded structure can also include a first die directly bonded to the interconnect structure. The bonded structure can also include a second die mounted to the interconnect structure. The second die is spaced apart from the first die laterally along an upper surface of the interconnect structure. The second die is electrically connected with the first die at least partially through the interconnect structure. The bonded structure can further include a dielectric layer that is disposed over the upper surface of the interconnect structure between the first die and the second die.
1. A method of manufacturing a bonded structure, the method comprising:
providing a routing structure having conductors at least partially embedded in a non-conductive material and an upper surface, the upper surface comprising a first conductive pad, a second conductive pad, and a non-conductive region, wherein providing the routing structure comprises forming the routing structure on a carrier;
directly bonding a first die comprising integrated circuitry to the routing structure, the first die having a first bonding surface, the first bonding surface comprising a first conductive bond pad and a first non-conductive material, the first conductive bond pad directly bonded to the first conductive pad without an intervening adhesive, and the first non-conductive material directly bonded to a first portion of the non-conductive region;
removing the carrier from the routing structure after directly bonding the first die to the routing structure;
directly bonding a second die comprising integrated circuitry to the routing structure, the second die spaced apart from the first die laterally along the upper surface of the routing structure, the second die electrically connected with the first die through at least the routing structure;
forming a dielectric layer over at least a portion of the upper surface of the routing structure;
disposing an encapsulant over at least a portion of the dielectric layer; and
providing a support structure over the encapsulant and the first and second dies.
2. The method of claim 1 , wherein forming the dielectric layer comprises forming the dielectric layer along a sidewall of the first die, a portion of the upper surface, and a sidewall of the second die.
3. A method of manufacturing a bonded structure, the method comprising:
providing an interposer element having an upper surface at a first side and a lower surface at a second side, wherein the upper surface comprises a first conductive pad, a second conductive pad, and a non-conductive region, and wherein the lower surface is supported by a carrier;
directly bonding a first die comprising integrated circuitry to the interposer element, the first die having a first bonding surface, the first bonding surface comprising a first conductive bond pad and a first non-conductive material, the first conductive bond pad directly bonded to the first conductive pad without an intervening adhesive, and the first non-conductive material directly bonded to a first portion of the non-conductive region;
directly bonding a second die comprising integrated circuitry to the interposer element, the second die spaced apart from the first die laterally along the upper surface of the interposer element by a gap, the second die electrically connected with the first die through at least the interposer element;
disposing an insulating material over the upper surface of the interposer element to fill the gap;
planarizing the insulating material and the first and second dies;
attaching a support structure over the planarized insulating material and the first and second dies;
removing the carrier; and
attaching the second side of the interposer element to a substrate.
4. The method of claim 3 , wherein attaching the support structure comprises attaching a silicon wafer over the planarized insulating material and first and second dies.
5. The method of claim 3 , wherein disposing the insulating material comprises conformally depositing a first layer over the upper surface of the interposer element and the first and second dies.
6. The method of claim 5 , wherein disposing the insulating material further comprises disposing a second layer over the first layer.
7. The method of claim 5 , wherein the first layer has a coefficient of thermal expansion less than 10 ppm/° C.
8. The method of claim 7 , wherein the first layer has a coefficient of thermal expansion less than 6 ppm/° C.
9. The method of claim 3 , wherein the substrate comprises conductive vias extending through the substrate.
10. The method of claim 9 , wherein the conductive vias provide electrical connection to the first and second dies through the interposer element.
11. The method of claim 3 , further comprising, after disposing the insulating material, singulating through the insulating material.
12. The method of claim 3 , wherein the interposer element comprises a redistribution layer (RDL).
13. A method of manufacturing a bonded structure, the method comprising:
providing a reconstituted wafer comprising:
a carrier and a routing structure on the carrier, the routing structure comprising a nonconductive material, a plurality of conductive lines in the nonconductive material, and a plurality of conductive vias extending at least partially through the nonconductive material;
a first die hybrid bonded to the routing structure, the first die comprising integrated circuitry;
a second die hybrid bonded to the routing structure, the second die comprising integrated circuitry, the second die electrically connected with the first die through at least the routing structure; and
an insulating material over the routing structure and in which the first and second dies are at least partially embedded;
planarizing the insulating material and the first and second dies;
attaching a support structure over the planarized insulating material and the first and second dies;
removing the carrier; and
attaching the routing structure to a substrate.
14. The method of claim 13 , further comprising singulating the reconstituted wafer to form a plurality of reconstituted elements, one of the plurality of reconstituted elements including at least the first die, the second die, and a portion of the routing structure.
15. The method of claim 13 , wherein attaching the support structure comprises attaching a silicon wafer over the planarized insulating material and the first and second dies.
16. The method of claim 13 , wherein disposing the insulating material comprises conformally depositing a first layer over the routing structure and the first and second dies.
17. The method of claim 16 , wherein disposing the insulating material further comprises disposing a second layer over the first layer.
18. The method of claim 16 , wherein the first layer has a coefficient of thermal expansion less than 10 ppm/° C.
19. The method of claim 18 , wherein the first layer has a coefficient of thermal expansion less than 6 ppm/° C.
20. The method of claim 13 , wherein the substrate comprises second conductive vias extending through the substrate.
21. The method of claim 1 , wherein providing the support structure comprises attaching a semiconductor structure over the encapsulant and the first and second dies.
22. The method of claim 1 , wherein providing the support structure comprises attaching a silicon wafer over the encapsulant and the first and second dies.