Semiconductor device with discrete blocks
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
1. A semiconductor device comprising:
a first planar surface comprising an encapsulant, a first semiconductor device, and a connection block, wherein the first semiconductor device, the encapsulant, and a passive device located within the connection block each have top surfaces which are planar with each other;
a second planar surface comprising the encapsulant, the first semiconductor device and the connection block;
a first redistribution layer located adjacent to the first planar surface; and
a second redistribution layer located adjacent to the second planar surface, wherein the encapsulant, the passive device and the first semiconductor device are each coplanar with each other with respect to respective top and bottom sides as seen in a cross-sectional view.
2. The semiconductor device of claim 1 , wherein the second redistribution layer is an interposer.
3. The semiconductor device of claim 1 , wherein the second redistribution layer is a packaging substrate.
4. The semiconductor device of claim 1 , wherein the second redistribution layer is a silicon interposer.
5. The semiconductor device of claim 1 , wherein the second redistribution layer is an organic substrate.
6. The semiconductor device of claim 1 , wherein the second redistribution layer is a laminate substrate.
7. The semiconductor device of claim 1 , wherein the connection block is one of a plurality of connection blocks, the plurality of connection blocks arranged in a ring around the first semiconductor device.
8. A semiconductor device comprising:
through vias extending through a first connection block and electrically connecting a first redistribution layer and a second redistribution layer;
solder balls in physical connection with the second redistribution layer;
a memory stack bonded to the first redistribution layer;
a passive device different from the through vias; and
a semiconductor die planar with an encapsulant, wherein the encapsulant, the passive device and the semiconductor die are each coplanar with each other with respect to respective top and bottom sides as seen in a cross-sectional view.
9. The semiconductor device of claim 8 , further comprising a second connection block located on an opposite side of the semiconductor device from the first connection block.
10. The semiconductor device of claim 9 , wherein the first connection block and the second connection block are part of a ring of connection blocks that encircle the semiconductor die.
11. The semiconductor device of claim 10 , wherein the ring of connection blocks continuously encircles the semiconductor die.
12. The semiconductor device of claim 10 , wherein the ring of connection blocks brokenly encircles the semiconductor die.
13. The semiconductor device of claim 8 , wherein the first connection block is the only connection block within the encapsulant.
14. The semiconductor device of claim 13 , wherein the semiconductor device is the only semiconductor die within the encapsulant.
15. A semiconductor device comprising:
a multi-chip package;
a first package bonded to the multi-chip package, the multi-chip package comprising at least two planar surfaces, a first one of the at least two planar surfaces comprising an encapsulant, an integrated passive device, and a first semiconductor device, and wherein a second one of the at least two planar surfaces comprises the encapsulant and the first semiconductor device; and
a through via extending through a connection block from the first one of the at least two planar surfaces to the second one of the at least two planar surfaces, wherein a top side and a bottom side of the encapsulant are coplanar with respective sides of both the first semiconductor device and the integrated passive device within the connection block.
16. The semiconductor device of claim 15 , wherein the integrated passive device is an inductor.
17. The semiconductor device of claim 16 , wherein the inductor extends from a first side of the connection block to a second side of the connection block.
18. The semiconductor device of claim 16 , wherein the inductor is formed in a metallization layer on a single side of the connection block.
19. The semiconductor device of claim 15 , further comprising a first interconnect layer located adjacent to the second one of the at least two planar surfaces.
20. The semiconductor device of claim 19 , wherein the first interconnect layer comprises a laminate substrate.