Granted Patent B2

US 12,300,661 · App. 18/353,019 · Granted May 13, 2025

Inventors: Cyprian Emeka Uzoh (San Jose, CA); Pawel Mrozek (San Jose, CA)

Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

H01L24/80H01L24/08H01L2224/08145H01L2224/80011H01L2224/80013H01L2224/80031H01L2224/80895H01L2224/80896

Abstract

Claims (38)

1. A method, comprising:

preparing a surface for hybrid bonding, the hybrid bonding comprising direct bonding between dielectric materials and direct metal-to-metal bonding between conductive materials, wherein preparing the surface for hybrid bonding comprises ashing the surface with an oxygen plasma;

activating the surface for the hybrid bonding;

after activating the surface, cleaning the surface to remove particles disposed at the surface; and

hybrid bonding the surface to another surface.

2. The method of claim 1 , wherein preparing the surface for hybrid bonding comprises:

forming cavities in the surface;

forming a conductive metal in the cavities; and

planarizing the surface to provide a smooth oxide surface and conductive metal recesses.

3. The method of claim 2 ,

wherein ashing the surface comprises ashing the smooth oxide surface and conductive metal recesses to remove organic traces of a resist material, and

wherein cleaning the surface to remove the particles disposed at the surface comprises rinsing the surface with a cleaning fluid.

4. The method of claim 1 , wherein cleaning the surface to remove particles comprises physically removing the particles.

5. The method of claim 1 , wherein cleaning the surface to remove particles comprises dissolving the particles.

6. The method of claim 1 , wherein cleaning the surface to remove particles disposed at the surface further comprises applying an alkaline solution to remove the particles.

7. The method of claim 6 , wherein a concentration or a pH of the alkaline solution is selected to dissolve 1-10 nanometer metal particles in a selected amount of time without degrading the activated surface.

8. The method of claim 6 , further comprising applying a megasonic agitation to the alkaline solution to assist removing the particles disposed at the surface.

9. The method of claim 1 , wherein cleaning the surface to remove particles disposed at the surface comprises applying a cleaning solution containing at least one agent selected from the group consisting of hydrogen peroxide, tetra methyl ammonium hydroxide, an organic acid, and an inorganic acid.

10. The method of claim 9 , wherein the concentration of the at least one agent is selected to be less than 1% of the cleaning solution by volume.

11. The method of claim 9 , further comprising applying a megasonic agitation to the cleaning solution to assist removing the particles disposed at the surface.

12. A method, comprising:

providing a first substrate having a first surface;

preparing the first surface for bonding;

activating the first surface;

after activating the first surface, exposing the first surface to a cleaning solution comprising one or more acids to remove nanoparticles from the first surface, wherein a concentration of the one or more acids in the cleaning solution is less than 0.05 volume %; and

bonding the first surface to a second surface of a second substrate.

13. The method of claim 12 , wherein the one or more acids comprise an organic acid.

14. The method of claim 12 , wherein the one or more acids comprise an inorganic acid.

15. The method of claim 12 , wherein activating the first surface comprises plasma activating the first surface.

16. The method of claim 12 , further comprising applying a megasonic agitation to the one or more acids to assist removing the nanoparticles from the first surface.

17. A method, comprising:

providing a first substrate having a first surface having a first conductive feature;

preparing the first surface for bonding, wherein preparing the first surface for bonding comprises exposing the first surface to a nitrogen plasma;

after exposing the first surface to the nitrogen plasma, cleaning the first surface to remove metal nanoparticles; and

hybrid bonding the cleaned first surface to a second surface of a second substrate.

18. The method of claim 17 , wherein cleaning the first surface to remove metal nanoparticles comprises applying an alkaline solution to remove the metal nanoparticles.

19. The method of claim 17 , wherein cleaning the first surface to remove metal nanoparticles comprises applying an acidic solution to remove the metal nanoparticles.

20. The method of claim 17 , wherein exposing the first surface to the nitrogen plasma comprises plasma activating the first surface with the nitrogen plasma.

Assignments (2)

Continuity (3)

References Cited (375)

Cited By (2)

US 12,431,460 US 12,604,771