IP Library › Granted Patent US 12,695,438
Granted Patent B2
US 12,695,438 · App. 18/627,976 · Granted Jul 28, 2026

Acoustic wave device with interdigital transducer electrodes having two bus bars

Inventor: Rei Goto (Osaka, JP)
Assignee: Skyworks Solutions, Inc.
H03H9/25H03H9/145H03H9/64H04B1/38
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Quick Facts
Patent No.
US 12,695,438
App. No.
18/627,976
Filed
Apr 5, 2024
Granted
Jul 28, 2026
Kind
B2
Examiner
TRAN, TUAN A
Art Unit
2648
USPC
455/73
Abstract

An acoustic wave device has a layer of piezoelectric material and two interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material. Each interdigital transducer electrode of the two interdigital transducer electrodes includes a first bus bar, a second bus bar arranged in parallel to the first bus bar and having a smaller width than the first bus bar, and a plurality of electrode fingers extending from the second bus bar towards the respective other interdigital transducer electrode. The electrode fingers of the two interdigital transducer electrodes are interleaved. The second bus bar of each interdigital transducer electrode is connected with the first bus bar of the same interdigital transducer electrode via a plurality of bridges. Each bridge extends collinearly with one of the electrode fingers of the same interdigital transducer electrode. Each bridge has a width smaller than a smallest width of the electrode finger with which it is collinear.

Claims (28)

1 . An acoustic wave device comprising:

a layer of piezoelectric material; and

two interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode of the two interdigital transducer electrodes including a first bus bar, a second bus bar arranged in parallel to the first bus bar and having a smaller width than the first bus bar, a plurality of electrode fingers extending from the second bus bar towards the respective other interdigital transducer electrode, the electrode fingers of the two interdigital transducer electrodes being interleaved, the second bus bar of each interdigital transducer electrode being connected with the first bus bar of the same interdigital transducer electrode via a plurality of bridges, each bridge extending collinearly with one of the electrode fingers of the same interdigital transducer electrode, each bridge having a width smaller than a smallest width of the electrode finger with which it is collinear.

2 . The acoustic wave device of claim 1 wherein the width of the bridge of each electrode finger is between 50% and 80% of the width of a central portion of that electrode finger.

3 . The acoustic wave device of claim 2 wherein the width of the bridge of each electrode finger is between 60% and 75% of the width of the central portion of that electrode finger.

4 . The acoustic wave device of claim 1 wherein each electrode finger is composed mainly of a central portion and further includes at least one flared portion having a greater width than the central portion.

5 . The acoustic wave device of claim 4 wherein the at least one flared portion has a length of between 0.5 L and 2 L, L being a periodic distance between two electrode fingers of the same electrode.

6 . The acoustic wave device of claim 4 wherein each electrode finger includes a proximal flared portion which is closer to the second bus bar from which that electrode finger extends than the central portion of that electrode finger.

7 . The acoustic wave device of claim 6 wherein each electrode finger includes an intermediate portion between the second bus bar and the proximal flared portion, the intermediate portion being of the same width as the central portion of that electrode finger.

8 . The acoustic wave device of claim 1 wherein each electrode finger includes a distal flared portion at its distal end facing the other interdigital transducer electrode.

9 . The acoustic wave device of claim 8 wherein each second bus bar of each of the interdigital transducer electrode includes a dummy electrode finger extending from the second bus bar towards a corresponding one of the flared portions at the distal ends of the electrode fingers of the other interdigital transducer electrode.

10 . The acoustic wave device of claim 9 wherein the width of each of the dummy electrode fingers is smaller than the width of the corresponding flared portion of the electrode finger it faces.

11 . The acoustic wave device of claim 9 wherein a length of the dummy electrode finger is between 0.05 L and 0.25 L, L being a periodic distance between two electrode fingers of the same electrode.

12 . The acoustic wave device of claim 9 wherein a length of each dummy electrode finger is between 0.05 and 0.25 times the length of the flared portion it faces, and the width of each dummy electrode finger is between 0.15 L and 0.25 L.

13 . The acoustic wave device of claim 9 wherein a first silicon-comprising structure is arranged over a first area of the interdigital transducer electrodes where the electrode fingers of the two electrodes are interwoven.

14 . The acoustic wave device of claim 13 wherein a second silicon-comprising structure is arranged over a second area of one or both of the interdigital transducer electrodes, the second area including at least the second bus bar, the dummy electrode fingers, and at least a part of the first bus bar.

15 . The acoustic wave device of claim 14 wherein the second silicon-comprising structure has a width, in a direction parallel to the electrode fingers, of between 0.75 L and 1.0 L, and/or a depth between 0.007 L and 0.015 L.

16 . The acoustic wave device of claim 1 wherein a gap between the first bus bar and the second bus bar is between 0.3 L and 1.0 L.

17 . The acoustic wave device of claim 1 wherein a width of the second bus bar is between 0.05 L and 0.25 L.

18 . The acoustic wave device of claim 1 wherein at least one trench is formed in the piezoelectric layer, the trench being arranged in parallel to the first and second bus bars, the at least one trench causing the surface of the piezoelectric layer to be lower between the electrode fingers compared to areas without the at least one trench.

19 . The acoustic wave device of claim 18 wherein two parallel trenches are formed, each trench being formed in a respective region of distal ends of one of the interdigital transducers electrodes.

20 . The acoustic wave device of claim 1 wherein the interdigital transducer electrodes are formed in at least a first and a second IDT electrode layers having different densities, and the second IDT electrode layer is disposed on an other side of the first IDT electrode layer as the piezoelectric layer, and includes aluminum, copper, magnesium, tungsten, titanium, platinum and/or ruthenium.

21 . A radio frequency module comprising:

a module package; and

an acoustic device within the module package, the acoustic device including a layer of piezoelectric material and two interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode of the two interdigital transducer electrodes including a first bus bar, a second bus bar arranged in parallel to the first bus bar and having a smaller width than the first bus bar, a plurality of electrode fingers extending from the second bus bar towards the respective other interdigital transducer electrode, the electrode fingers of the two interdigital transducer electrodes being interleaved, the second bus bar of each interdigital transducer electrode being connected with the first bus bar of the same interdigital transducer electrode via a plurality of bridges, each bridge extending collinearly with one of the electrode fingers of the same interdigital transducer electrode, each bridge having a width smaller than a smallest width of the electrode finger with which it is collinear.

22 . A wireless communication device comprising:

one or more antennas; and

a radio frequency module including an acoustic device, the acoustic device having a layer of piezoelectric material and two interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode of the two interdigital transducer electrodes including a first bus bar, a second bus bar arranged in parallel to the first bus bar and having a smaller width than the first bus bar, a plurality of electrode fingers extending from the second bus bar towards the respective other interdigital transducer electrode, the electrode fingers of the two interdigital transducer electrodes being interleaved, the second bus bar of each interdigital transducer electrode being connected with the first bus bar of the same interdigital transducer electrode via a plurality of bridges, each bridge extending collinearly with one of the electrode fingers of the same interdigital transducer electrode, each bridge having a width smaller than a smallest width of the electrode finger with which it is collinear.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2024
From: GOTO, REI
To: SKYWORKS SOLUTIONS, INC.
Reel/Frame 069089/0518 →
Continuity (2)
Provisional Application 63457742 · Apr 6, 2023
Related Publication 20240364305A1 · Oct 31, 2024
References Cited (176)
US 5646584A · Kondratyev et al. · 1997 [cited by applicant]
US 5895996A · Takagi et al. · 1999 [cited by applicant]
US 7230512B1 · Carpenter et al. · 2007 [cited by applicant]
US 7352104B2 · Yamazaki et al. · 2008 [cited by applicant]
US 7554242B2 · Aoki et al. · 2009 [cited by applicant]
US 7786827B2 · Yoneya · 2010 [cited by examiner]
US 8294331B2 · Abbott et al. · 2012 [cited by applicant]
US 8741683B2 · Huang et al. · 2014 [cited by applicant]
US 9065424B2 · Nakanishi et al. · 2015 [cited by applicant]
US 9124240B2 · Shimizu et al. · 2015 [cited by applicant]
US 9136458B2 · Komatsu et al. · 2015 [cited by applicant]
US 9257960B2 · Ruile et al. · 2016 [cited by applicant]
US 9413330B2 · Shimizu et al. · 2016 [cited by applicant]
US 9419584B2 · Tsuranari et al. · 2016 [cited by applicant]
US 9438201B2 · Hori et al. · 2016 [cited by applicant]
US 9537464B2 · Yamanaka · 2017 [cited by applicant]
US 9640750B2 · Nakanishi et al. · 2017 [cited by applicant]
US 9641152B2 · Nakamura et al. · 2017 [cited by applicant]
US 9673779B2 · Ruile et al. · 2017 [cited by applicant]
US 9712139B2 · Taniguchi · 2017 [cited by examiner]
US 9748923B2 · Kando et al. · 2017 [cited by applicant]
US 9748924B2 · Komatsu et al. · 2017 [cited by applicant]
US 10090825B2 · Kuroyanagi · 2018 [cited by applicant]
US 10097158B2 · Kaneda · 2018 [cited by examiner]
US 10153748B2 · Tanaka · 2018 [cited by applicant]
US 10355668B2 · Iwaki · 2019 [cited by examiner]
US 10361678B2 · Iwaki et al. · 2019 [cited by applicant]
US 10469050B2 · Gamble · 2019 [cited by examiner]
US 10476470B2 · Takamine · 2019 [cited by applicant]
US 10483942B2 · Goto et al. · 2019 [cited by applicant]
US 10574207B2 · Yoon et al. · 2020 [cited by applicant]
US 10727844B1 · Gong et al. · 2020 [cited by applicant]
US 10749497B2 · Tang et al. · 2020 [cited by applicant]
US 10812044B2 · Okunaga · 2020 [cited by examiner]
US 10826507B1 · Gong et al. · 2020 [cited by applicant]
US 10873313B2 · Zou et al. · 2020 [cited by applicant]
US 10958246B2 · Miyamoto · 2021 [cited by examiner]
US 11050406B2 · Maki et al. · 2021 [cited by applicant]
US 11095266B2 · Inoue et al. · 2021 [cited by applicant]
US 11165411B2 · Liu et al. · 2021 [cited by applicant]
US 11239817B2 · Hatano et al. · 2022 [cited by applicant]
US 11245378B2 · Tang et al. · 2022 [cited by applicant]
US 11296672B2 · Hiratsuka et al. · 2022 [cited by applicant]
US 11368137B2 · Goto et al. · 2022 [cited by applicant]
US 11496116B2 · Takata · 2022 [cited by examiner]
US 11522514B2 · Zou et al. · 2022 [cited by applicant]
US 11606078B2 · Tang et al. · 2023 [cited by applicant]
US 11611325B2 · Suzuki · 2023 [cited by examiner]
US 11616491B2 · Tang et al. · 2023 [cited by applicant]
US 11646713B2 · Suzuki · 2023 [cited by examiner]
US 11677380B2 · Fujiwara et al. · 2023 [cited by applicant]
US 11689180B2 · Suzuki · 2023 [cited by examiner]
US 11705883B2 · Hiramatsu · 2023 [cited by examiner]
US 11722122B2 · Goto et al. · 2023 [cited by applicant]
US 11750172B2 · Goto et al. · 2023 [cited by applicant]
US 11824515B2 · Tang et al. · 2023 [cited by applicant]
US 11870421B2 · Hiramatsu · 2024 [cited by examiner]
US 11962283B2 · Zou et al. · 2024 [cited by applicant]
US 11990892B2 · Liu · 2024 [cited by examiner]
US 12040784B2 · Tang et al. · 2024 [cited by applicant]
US 12047053B2 · Maki et al. · 2024 [cited by applicant]
US 12136908B2 · Hiramatsu · 2024 [cited by examiner]
US 12255632B2 · Nakamura · 2025 [cited by examiner]
US 12255635B2 · Nakamura · 2025 [cited by examiner]
US 12294351B2 · Ochiai · 2025 [cited by examiner]
US 12355424B2 · Chauhan · 2025 [cited by examiner]
US 12368431B2 · Abbott · 2025 [cited by examiner]
US 12476608B2 · Abbott · 2025 [cited by examiner]
US 12483226B2 · Goto · 2025 [cited by examiner]
US 12542524B2 · Goto · 2026 [cited by examiner]
US 20040222717A1 · Matsuda et al. · 2004 [cited by applicant]
US 20050077982A1 · Funasaka · 2005 [cited by applicant]
US 20050127781A1 · Yamazaki et al. · 2005 [cited by applicant]
US 20080018417A1 · Igaki et al. · 2008 [cited by applicant]
US 20100265010A1 · Jian · 2010 [cited by applicant]
US 20120049968A1 · Owaki et al. · 2012 [cited by applicant]
US 20140285287A1 · Komatsu et al. · 2014 [cited by applicant]
US 20140339957A1 · Tajima et al. · 2014 [cited by applicant]
US 20160294361A1 · Yamane et al. · 2016 [cited by applicant]
US 20170063332A1 · Gilbert et al. · 2017 [cited by applicant]
US 20170099043A1 · Goto et al. · 2017 [cited by applicant]
US 20170104470A1 · Koelle et al. · 2017 [cited by applicant]
US 20170214385A1 · Bhattacharjee · 2017 [cited by applicant]
US 20170214386A1 · Kido · 2017 [cited by applicant]
US 20170222618A1 · Inoue · 2017 [cited by applicant]
US 20170250669A1 · Kuroyanagi et al. · 2017 [cited by applicant]
US 20170272051A1 · Kurihara et al. · 2017 [cited by applicant]
US 20170273183A1 · Kawasaki et al. · 2017 [cited by applicant]
US 20170288629A1 · Bhattacharjee et al. · 2017 [cited by applicant]
US 20170359048A1 · Yasuda · 2017 [cited by applicant]
US 20180013404A1 · Kawasaki et al. · 2018 [cited by applicant]
US 20180048290A1 · Sekine et al. · 2018 [cited by applicant]
US 20180097501A1 · Kikuchi et al. · 2018 [cited by applicant]
US 20180097508A1 · Iwamoto et al. · 2018 [cited by applicant]
US 20180102760A1 · Inoue et al. · 2018 [cited by applicant]
US 20180138893A1 · Caron · 2018 [cited by applicant]
US 20180316329A1 · Guenard et al. · 2018 [cited by applicant]
US 20180367119A1 · Lee · 2018 [cited by applicant]
US 20190288661A1 · Akiyama et al. · 2019 [cited by applicant]
US 20190319772A1 · Ando et al. · 2019 [cited by applicant]
US 20190379347A1 · Goto et al. · 2019 [cited by applicant]
US 20200036362A1 · Daimon · 2020 [cited by applicant]
US 20200067482A1 · Maki et al. · 2020 [cited by applicant]
US 20200106420A1 · Kodama et al. · 2020 [cited by applicant]
US 20200144984A1 · Fukuhara et al. · 2020 [cited by applicant]
US 20200212875A1 · Goto et al. · 2020 [cited by applicant]
US 20200212876A1 · Goto et al. · 2020 [cited by applicant]
US 20200212883A1 · Goto et al. · 2020 [cited by applicant]
US 20200220522A1 · Nosaka · 2020 [cited by applicant]
US 20200358424A1 · Kaneda et al. · 2020 [cited by applicant]
US 20200366268A1 · Goto et al. · 2020 [cited by applicant]
US 20200366270A1 · Matsuoka · 2020 [cited by applicant]
US 20200389151A1 · Goto · 2020 [cited by applicant]
US 20210006225A1 · Hatano · 2021 [cited by applicant]
US 20210050842A1 · Tang et al. · 2021 [cited by applicant]
US 20210058057A1 · Goto et al. · 2021 [cited by applicant]
US 20210126616A1 · Hiramatsu et al. · 2021 [cited by applicant]
US 20210167748A1 · Huck et al. · 2021 [cited by applicant]
US 20210297060A1 · Omura et al. · 2021 [cited by applicant]
US 20220014152A1 · Gebeyehu et al. · 2022 [cited by applicant]
US 20220014175A1 · Nagatomo et al. · 2022 [cited by applicant]
US 20220077840A1 · Caron · 2022 [cited by applicant]
US 20220109419A1 · Esquius Morote · 2022 [cited by applicant]
US 20220209738A1 · Torazawa et al. · 2022 [cited by applicant]
US 20220271730A1 · Abbott et al. · 2022 [cited by applicant]
US 20220271733A1 · Abbott et al. · 2022 [cited by applicant]
US 20220271734A1 · Abbott et al. · 2022 [cited by applicant]
US 20220328980A1 · Dicarlo et al. · 2022 [cited by applicant]
US 20220399867A1 · Goto et al. · 2022 [cited by applicant]
US 20220399871A1 · Goto et al. · 2022 [cited by applicant]
US 20230013597A1 · Goto et al. · 2023 [cited by applicant]
US 20230016884A1 · Goto et al. · 2023 [cited by applicant]
US 20230026465A1 · Huang et al. · 2023 [cited by applicant]
US 20230031568A1 · Tang et al. · 2023 [cited by applicant]
US 20230032325A1 · Goto et al. · 2023 [cited by applicant]
US 20230039507A1 · Kim et al. · 2023 [cited by applicant]
US 20230077266A1 · Ishitaki · 2023 [cited by examiner]
US 20230104405A1 · Hiramatsu et al. · 2023 [cited by applicant]
US 20230105726A1 · Tang et al. · 2023 [cited by applicant]
US 20230107376A1 · Goto et al. · 2023 [cited by applicant]
US 20230109106A1 · Hiramatsu et al. · 2023 [cited by applicant]
US 20230112677A1 · Tang et al. · 2023 [cited by applicant]
US 20230163748A1 · Goto et al. · 2023 [cited by applicant]
US 20230208385A1 · Hiramatsu et al. · 2023 [cited by applicant]
US 20230208396A1 · Hiramatsu et al. · 2023 [cited by applicant]
US 20230208398A1 · Goto et al. · 2023 [cited by applicant]
US 20230208399A1 · Goto et al. · 2023 [cited by applicant]
US 20230223910A1 · Goto et al. · 2023 [cited by applicant]
US 20230223917A1 · Goto et al. · 2023 [cited by applicant]
US 20230231529A1 · Hiramatsu et al. · 2023 [cited by applicant]
US 20230275565A1 · Tang et al. · 2023 [cited by applicant]
US 20230283261A1 · Huang et al. · 2023 [cited by applicant]
US 20230327630A1 · Goto et al. · 2023 [cited by applicant]
US 20230327642A1 · Goto et al. · 2023 [cited by applicant]
US 20230327645A1 · Goto et al. · 2023 [cited by applicant]
US 20230336152A1 · Goto et al. · 2023 [cited by applicant]
US 20230336153A1 · Goto et al. · 2023 [cited by applicant]
US 20230336159A1 · Hiramatsu et al. · 2023 [cited by applicant]
US 20230344411A1 · Chen et al. · 2023 [cited by applicant]
US 20230344415A1 · Chen et al. · 2023 [cited by applicant]
US 20230344416A1 · Chen et al. · 2023 [cited by applicant]
US 20240022164A1 · Gong et al. · 2024 [cited by applicant]
US 20240039507A1 · Goto et al. · 2024 [cited by applicant]
US 20240186978A1 · Hiramatsu et al. · 2024 [cited by applicant]
US 20240223149A1 · Goto et al. · 2024 [cited by applicant]
US 20240223152A1 · Goto et al. · 2024 [cited by applicant]
US 20240223156A1 · Goto et al. · 2024 [cited by applicant]
CN 113098432 · 2021 [cited by applicant]
FR 3105894A1 · 2021 [cited by applicant]
JP 2009219045A · 2009 [cited by applicant]
JP 2014135624A · 2014 [cited by applicant]
JP 2020092422A · 2020 [cited by applicant]
WO WO2017161303A1 · 2017 [cited by applicant]
Kapp, M., et al., “Investigation of GeO2 thin film properties for improvement of temperature coefficient of frequency of SAW devices”, 2014 European Frequency and Time Forum (EFTF), Jun. 2014, 4 pages. [cited by applicant]
Iwamoto et al., “Transverse Modes in I.H.P. SAW Resonator and Their Suppression Method”, Murata Manufacturing co., Ltd., 4 pages (2018). [cited by applicant]
Solal et al., “A method to reduce losses in buried electrodes RF SAW resonators”, 2011 IEEE International Ultrasonics Symposium, pp. 324-332, doi: 10.1109/ULTSYM.2011.0078. [cited by applicant]