IP Library › Assignment 013011/0300
Patent Assignment
Reel/Frame 013011/0300

Assignment of Assignor's Interest

Recorded: 2002-06-26 Pages: 19
Assignor
NIPPON STEEL CORPORATION
Executed: 2001-01-29
Assignee
UNITED MICROELECTRONICS CORPORATION
NO. 3 LI HSIN ROAD 2 SCIENCE BASED INDUSTRIAL PARK, HSIN CHU CITY, TAIWAN
Covered Properties (108)
Mos Semiconductor Device Formed on Insulator
Patent: 5,233,207 →
Application: 07/719,626 →
A Digital Signal Comparator for Comparing N-Bit Binary Signals
Patent: 5,220,306 →
Application: 07/751,531 →
Pulse Code Modulation Circuit
Patent: 5,239,558 →
Application: 07/751,534 →
Semiconductor Memory and Memory Cell
Patent: 5,305,258 →
Application: 07/751,535 →
Semiconductor Device
Patent: 5,274,260 →
Application: 07/751,991 →
Device for Supporting a Wafer
Patent: 5,192,087 →
Application: 07/769,432 →
Mos Type Semiconductor Memory Device
Patent: 5,250,832 →
Application: 07/770,873 →
Shifting Circuit and Shift Register
Patent: 5,295,174 →
Application: 07/795,501 →
Semiconductor Device Reducing Internal Noises and Integrated Circuit Employing the Same
Patent: 5,260,594 →
Application: 07/795,775 →
Method and Apparatus for Writing and Reading Data to/from a Memory
Patent: 5,274,589 →
Application: 07/795,777 →
Reticle Comprising Phase Shifter with a Tapered Edge
Patent: 5,356,738 →
Application: 07/813,030 →
Semiconductor Device with Jumping Wire
Patent: 5,362,984 →
Application: 07/839,558 →
Semiconductor Sram with Low Resistance Power Line
Patent: 5,323,045 →
Application: 07/858,136 →
Method for the Fabrication of Mos Devices
Patent: 5,242,849 →
Application: 07/887,009 →
Fuse Construction of a Semiconductor Device
Patent: 5,331,195 →
Application: 07/901,068 →
Process for Forming Aluminum Alloy Thin Film
Patent: 5,512,515 →
Application: 07/910,876 →
Method of Manufacturing Semiconductor Memory Device Having Trench Capacitors
Patent: 5,273,928 →
Application: 07/953,980 →
Electronic Device Adaptive to Mounting on a Printed Wiring Board
Patent: 5,349,501 →
Application: 07/958,622 →
Semiconductor Memory and Memorizing Method to Read Only Semiconductor Memory
Patent: 5,313,418 →
Application: 07/967,430 →
Mos Semiconductor Memory Device
Patent: 5,329,483 →
Application: 07/967,709 →
Mos Memory Device
Patent: 5,323,342 →
Application: 07/967,710 →
Mos Semiconductor Device and Method of Fabricating the Same
Patent: 5,371,391 →
Application: 07/992,829 →
Method and Apparatus for Projection Exposure
Patent: 5,329,335 →
Application: 08/032,319 →
Process for Producing a Semiconductor Memory Device Having Memory Cells Including Transistors and Capacitors
Patent: 5,292,679 →
Application: 08/049,306 →
Semiconductor Memory Device Having Memory Cells Formed of One Transistor and One Capacitor and a Method of Producing the Same
Patent: 5,335,196 →
Application: 08/049,497 →
Semiconductor Memory Having a Memory Cell Including a Capacitor with a Two-Layer Lower Electrode
Patent: 5,343,062 →
Application: 08/067,101 →
Semiconductor Device Having Conducting Layers Connected Through Contact Holes
Patent: 5,355,023 →
Application: 08/068,185 →
Liquid Overflow Tank Combined with Partition Isolating Two Chambers
Patent: 5,341,825 →
Application: 08/071,224 →
Method of Making a Semiconductor Memory Device
Patent: 5,432,113 →
Application: 08/102,008 →
Mos Semiconductor Memory Device Having Stack Capacitor with Metal Plug
Patent: 5,359,217 →
Application: 08/103,706 →
Mos Semiconductor with Ldd Structure Having Gate Electrode and Side Spacers of Polysilicon with Different Impurity Concentrations
Patent: 5,426,327 →
Application: 08/117,638 →
Multi-Layer Wiring Structure for Semiconductor Device and Method of Making the Same
Patent: 5,425,982 →
Application: 08/119,859 →
Method of Making a Memory Cell of a Semiconductor Memory Device
Patent: 5,366,919 →
Application: 08/135,532 →
Semiconductor Memory Device Having Memory Cells Including Transistors and Capacitors
Patent: 5,410,503 →
Application: 08/161,537 →
A Semiconductor Device with Improved Insulation of Wiring Structure from a Gate Electrode
Patent: 5,459,354 →
Application: 08/169,130 →
Mos-Type Semiconductor Device and Method of Making the Same
Patent: 5,436,481 →
Application: 08/182,989 →
Semiconductor Device and Method for Fabricating Same
Patent: 5,473,184 →
Application: 08/204,599 →
Semiconductor Memory Device Having Memory Cells with Enhanced Capacitor Capacity
Patent: 5,459,685 →
Application: 08/218,947 →
Thin Film Transistor Which Prevents Generation of Hot Carriers
Patent: 5,414,277 →
Application: 08/239,271 →
Metal Oxide Semiconductor Device Having a Common Gate Electrode for N and P Channel Mos Transistors
Patent: 5,438,214 →
Application: 08/258,351 →
Semiconductor Element Having Cr in Silicon Dioxide
Patent: 5,559,351 →
Application: 08/274,558 →
Contact Structure of Semiconductor Device and Method of Manufacturing the Same
Patent: 5,410,183 →
Application: 08/275,667 →
Semiconductor Device Having Trench Type Capacitors Formed Completely Within an Insulating Layer
Patent: 5,468,979 →
Application: 08/294,787 →
Semiconductor Device Using Element Isolation by Field Shield
Patent: 5,498,898 →
Application: 08/362,784 →
Method of Fabricating Memory a Standard Capacitive Memory Cell in a Semiconductor Memory Device
Patent: 5,488,008 →
Application: 08/384,465 →
Semiconductor Memory Device and Method for Fabricating the Same
Patent: 5,644,151 →
Application: 08/453,975 →
An Insulated-Gate Field-Effect Transistor Ina Semiconductor Device in Which Source/Drain Electrodes Are Defined by Formation of Silicide on a Gate Electrode and a Field-Effect Transistor
Patent: 5,569,947 →
Application: 08/496,064 →
Method for Fabrication of Interconnections in Semiconductor Devices
Patent: 5,580,824 →
Application: 08/497,396 →
Semiconductor Device Including a Pair of Transistors Having a Common Channel Region, and Method of Making the Same
Patent: 5,508,545 →
Application: 08/507,685 →
Sense Circuit for Semiconductor Memory Devices
Patent: 5,539,701 →
Application: 08/511,445 →
Semiconductor Memory Device and a Method of Making the Same
Patent: 5,686,746 →
Application: 08/521,445 →
Method of Making an Isolation Layer Stack Semiconductor Device
Patent: 5,578,510 →
Application: 08/547,157 →
A Semiconductor Device with a Reduced Element Isolation Region
Patent: 5,714,787 →
Application: 08/567,770 →
Semiconductor Device Having Metal Silicide Film on Impurity Diffused Layer or Conductive Layer
Patent: 5,648,673 →
Application: 08/580,460 →
Semiconductor Storage Device
Patent: 5,798,545 →
Application: 08/580,461 →
Semiconductor Device and Method of Manufacturing the Same Apparatus and Method for Providing Semiconductor Devices Having a Field Shield Element Between Devices
Patent: 5,814,875 →
Application: 08/594,301 →
A Semiconductor Device Having Cmos Transistors
Patent: 5,841,185 →
Application: 08/601,799 →
Method of Fabricating a Semiconductor Device Using Element Isolation by Field Shield
Patent: 5,672,526 →
Application: 08/614,047 →
Method for Fabricating Semiconductor Device
Patent: 5,762,813 →
Application: 08/615,603 →
Semiconductor Device Having Character in Bpsg Film
Patent: 5,672,907 →
Application: 08/618,170 →
Semiconductor Memory Device Having Word Line Conductors Provided at Lower Level Than Memory Cell Capacitor and Method of Manufacturing Same
Patent: 5,959,319 →
Application: 08/631,682 →
Method of Manufacturing First and Second Memory Cell Arrays with a Capacitor and a Nonvolatile Memory Cell
Patent: 5,612,238 →
Application: 08/640,684 →
Semiconductor Memory and Method of Manufacturing the Same
Patent: 5,808,943 →
Application: 08/642,357 →
Semiconductor Device Having Semiconductor Regions of Different Conductivity Types Isolated by Field Oxide, and Method of Manufacturing the Same
Patent: 6,201,275 →
Application: 08/667,587 →
Semiconductor Device Including a Capacitor Responsible for a Power Supply Voltage to Semiconductor Device and Capable of Blocking an Increased Voltage
Patent: 5,814,850 →
Application: 08/671,341 →
Semiconductor Element and a Method of Manufacturing the Same
Patent: 5,821,173 →
Application: 08/674,186 →
Method of Manufacturing an Insulated-Gate Field-Effect Transistor in a Semiconductor Device in Which Source/Drain Electrodes Are Defined by Formation of Silicide on a Gate Electrode and a Field-Effect Transistor
Patent: 5,663,103 →
Application: 08/691,611 →
Semiconductor Memory Device with Memory Cells Each Having Transistor and Capacitor and Method of Making the Same
Patent: 5,747,845 →
Application: 08/700,082 →
Semiconductor Device That Prevents Peeling of a Titanium Nitride Film
Patent: 5,773,890 →
Application: 08/703,533 →
Semiconductor Having Two-Layer Contact
Patent: 6,204,561 →
Application: 08/745,274 →
Flattening Method and Apparatus for Semiconductor Device
Patent: 5,877,088 →
Application: 08/745,289 →
Mos Semiconductor Device with Mask Layers
Patent: 5,744,835 →
Application: 08/747,928 →
Semiconductor Device and Production Method Thereof
Patent: 5,814,887 →
Application: 08/754,298 →
Semiconductor Device and Production Method Thereof
Patent: 5,828,120 →
Application: 08/804,413 →
Electrically Alterable Nonvolatile Semiconductor Memory
Patent: 6,000,843 →
Application: 08/813,300 →
An Input Protective Circuit Having a Diffusion Resistance Layer
Patent: 5,932,917 →
Application: 08/834,840 →
Semiconductor Device and Method of Fabrication Thereof
Patent: 6,083,780 →
Application: 08/847,668 →
Semiconductor Device and a Method of Fabricating the Same
Patent: 5,872,392 →
Application: 08/848,289 →
Trench-Isolation Type Semiconductor Device and a Method of Manufacturing the Same
Patent: 5,914,517 →
Application: 08/853,943 →
Addressing Unit
Patent: 5,852,585 →
Application: 08/864,924 →
Semiconductor Device and Process of Producing Same
Patent: 5,866,484 →
Application: 08/888,125 →
Redundancy Circuit for Semiconductor Storage Apparatus
Patent: 5,848,007 →
Application: 08/901,952 →
Palladium Catalysts for Polymerization
Patent: 6,057,466 →
Application: 08/939,178 →
Signal Input Circuit
Patent: 6,037,824 →
Application: 08/948,941 →
Semiconductor Device and a Method of Manufacturing the Same
Patent: 6,124,638 →
Application: 08/960,257 →
High Density Semiconductor Memory Device
Patent: 5,770,874 →
Application: 08/966,751 →
"Integration Type Input Circuit and Method of Testing It"
Patent: 6,070,257 →
Application: 08/996,184 →
Clock Signal Generating Circuit Using Variable Delay Circuit
Patent: 5,990,714 →
Application: 08/996,767 →
Semiconductor Device and Method for Manufacturing the Same
Patent: 6,833,293 →
Application: 09/008,497 →
Publication: US 2004/0212022
Semiconductor Device and a Method of Manufacturing the Same
Patent: 6,066,894 →
Application: 09/016,731 →
Semiconductor Differential Amplifier Having a Gain Controlled by a Memory Transistor
Patent: 6,166,978 →
Application: 09/033,081 →
Trench Isolation for Semiconductor Device with Lateral Projections Above Substrate
Patent: 6,020,622 →
Application: 09/038,111 →
Semiconductor Device with a Mos Transistor for Cicuit Protection
Patent: 6,313,509 →
Application: 09/050,367 →
Semiconductor Device and a Method of Manufacturing the Same
Patent: 6,288,431 →
Application: 09/054,399 →
Semiconductor Device and Production Method of a Semiconductor Device Having a Capacitor
Patent: 6,093,575 →
Application: 09/057,371 →
Data Carrier, Game Machine Using Data Carrier, Information Communication Method, Information Communication, Automated Travelling Control System and Storing Medium
Patent: 6,234,902 →
Application: 09/060,106 →
Semiconductor Device and Manufacturing Method Thereof
Patent: 6,118,145 →
Application: 09/100,967 →
Semiconductor Memory Device and Method of Producing the Same
Patent: 6,392,264 →
Application: 09/110,252 →
Publication: US 2002/0003246
Semiconductor Structure Provided with a Polycide Interconnection Layer Having a Silicide Film Formed on a Polycrystal Silicon Film
Patent: 6,208,003 →
Application: 09/116,955 →
Differential Input Circuit
Patent: 6,114,872 →
Application: 09/120,284 →
Semiconductor Device and a Method of Manufacturing the Same
Patent: 6,242,788 →
Application: 09/124,059 →
Semiconductor Storage Device Including Short Circuit Avoiding Structure
Patent: 6,255,686 →
Application: 09/124,852 →
Semiconductor Device Having Buried Gate Electrode with Silicide Layer and Manfacturing Method Thereof
Patent: 5,994,736 →
Application: 09/134,378 →
Semiconductor Structure with Air Gaps Formed Between Metal Leads
Patent: 6,300,667 →
Application: 09/137,772 →
Semiconductor Device and a Method of Fabricating the Same
Patent: 6,048,776 →
Application: 09/161,316 →
Addressing Unit
Patent: 6,009,038 →
Application: 09/172,370 →
Semiconductor Memory Device Having Word Line Conductors Provided at Lower Level Than Memory Cell Capacitor and Method of Manufacturing Same
Patent: 6,060,350 →
Application: 09/335,499 →
Semiconductor Device Having Buried Gate Electrode with Silicide Layer and Manufacture Method Thereof
Patent: 6,171,916 →
Application: 09/427,097 →
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. Jun 24, 1991
From: ANZAI, KENJI
To: NIPPON STEEL CORPORATION
Reel/Frame 005769/0282 →
Assignment of Assignors Interest. Aug 29, 1991
From: SHIMIZU, SHIN
To: NIPPON STEEL CORPORATION
Reel/Frame 005827/0323 →
Assignment of Assignors Interest. Aug 29, 1991
From: SHIMIZU, SHIN
To: NIPPON STEEL CORPORATION, A CORPORATION OF JAPAN
Reel/Frame 005831/0268 →
Assignment of Assignors Interest. Aug 29, 1991
From: KOSHIZUKA, ATSUO
To: NIPPON STEEL CORPORATION
Reel/Frame 005831/0243 →
Assignment of Assignors Interest. Aug 29, 1991
From: KOSHIZUKA, ATSUO
To: NIPPON STEEL CORPORATION
Reel/Frame 005827/0321 →
Assignment of Assignors Interest. Oct 4, 1991
From: MURAI, ICHIRO
To: NIPPON STEEL CORPORATION
Reel/Frame 005874/0529 →
Assignment of Assignors Interest. Nov 1, 1991
From: KAWASHIMA, HIDEAKI; EGUCHI, KOUHEI
To: NIPPON STEEL CORPORATION
Reel/Frame 005910/0067 →
Assignment of Assignors Interest. Nov 21, 1991
From: SHIMIZU, SHIN
To: NIPPON STEEL CORPORATION A CORP. OF JAPAN
Reel/Frame 005922/0296 →
Assignment of Assignors Interest. Nov 21, 1991
From: SHIMIZU, SHIN
To: NIPPON STEEL CORPORATION A CORPORATION OF JAPAN
Reel/Frame 005928/0365 →
Assignment of Assignors Interest. Nov 21, 1991
From: KOSHIZUKA, ATSUO
To: NIPPON STEEL CORPORATION A CORP. OF JAPAN
Reel/Frame 005922/0344 →
Assignment of Assignors Interest. Dec 24, 1991
From: INOUE, HIROYUKI; ANZAI, KENJI; TANAKA, KIMIAKI
To: NIPPON STEEL CORPORATION
Reel/Frame 005966/0673 →
Assignment of Assignors Interest. Jun 8, 1992
From: KONDA, MASASHI; YAMAMOTO, TOSHIO; EMOTO, YOSHIAKI
To: NIPPON STEEL CORPORATION, A CORP. OF JAPAN
Reel/Frame 006158/0432 →
Assignment of Assignors Interest. Jul 21, 1992
From: SATO, YASUO
To: NIPPON STEEL CORPORATION
Reel/Frame 006229/0465 →
Assignment of Assignors Interest. Aug 20, 1992
From: OKEDA, YUKIHIRO
To: NIPPON STEEL CORPORATION
Reel/Frame 006237/0973 →
Assignment of Assignors Interest. Aug 25, 1992
From: TAKEUCHI, HIDEKI; KAWAMURA, KOICHIRO
To: NIPPON STEEL CORPORATION
Reel/Frame 006267/0546 →
Assignment of Assignors Interest. Sep 30, 1992
From: TANI, TOMOFUNE
To: NIPPON STEEL CORPORATION
Reel/Frame 006323/0917 →
Assignment of Assignors Interest. Oct 9, 1992
From: KAWAKAMI, YOUJI
To: NIPPON STEEL CORPORATION
Reel/Frame 006254/0628 →
Assignment of Assignors Interest. Oct 28, 1992
From: WADA, TOSHIO; EGAWA, YUICHI
To: NIPPON STEEL CORPORATION
Reel/Frame 006339/0215 →
Assignment of Assignors Interest. Oct 28, 1992
From: WADA, TOSHIO; IWASA, SHOICHI
To: NIPPON STEEL CORPORATION
Reel/Frame 006301/0928 →
Assignment of Assignors Interest. Oct 28, 1992
From: WADA, TOSHIO; IWASA, SHOICHI
To: NIPPON STEEL CORPORATION
Reel/Frame 006288/0593 →
Assignment of Assignors Interest. Mar 9, 1993
From: SATO, YASUO
To: NIPPON STEEL CORPORATION
Reel/Frame 006470/0570 →
Assignment of Assignors Interest. Mar 17, 1993
From: WADA, TOSHIO; INOUE, HIROYUKI; EGUCHI, KOUHEI
To: NIPPON STEEL CORPORATION
Reel/Frame 006488/0263 →
Assignment of Assignor's Interest Apr 21, 1993
From: ANZAI, KENJI
To: NIPPON STEEL CORPORATION
Reel/Frame 006546/0470 →
Assignment of Assignor's Interest Apr 21, 1993
From: ANZAI, KENJI
To: NIPPON STEEL CORPORATION
Reel/Frame 006536/0913 →
Assignment of Assignor's Interest Sep 17, 1993
From: MURAI, ICHIRO
To: NIPPON STEEL CORPORATION
Reel/Frame 006698/0651 →