IP Library › Granted Patent US 12,347,368
Granted Patent B2
US 12,347,368 · App. 18/591,443 · Granted Jul 1, 2025

Semiconductor device and electronic device including semiconductor device

Inventors: Shunpei Yamazaki (Setagaya, JP); Jun Koyama (Sagamihara, JP); Hiroyuki Miyake (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3208G09G3/2003G09G3/3233H10D30/6706H10D30/6755H10D30/6756H10D30/6757H10D86/423H10D86/60H10K59/1213H10K59/131G09G2330/021
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Quick Facts
Patent No.
US 12,347,368
App. No.
18/591,443
Granted
Jul 1, 2025
Kind
B2
Abstract

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Claims (62)

1. A semiconductor device comprising:

an oxide semiconductor layer;

a first conductive layer electrically connected to the oxide semiconductor layer;

a first insulating layer over the oxide semiconductor layer;

a second conductive layer under the first insulating layer; and

a third conductive layer over the first insulating layer,

wherein a first region of the second conductive layer and the oxide semiconductor layer overlap each other,

wherein a second region of the second conductive layer and the first conductive layer overlap each other,

wherein the first conductive layer is configured to serve as one of a source electrode and a drain electrode,

wherein the first region of the second conductive layer is configured to serve as the other of the source electrode and the drain electrode,

wherein a first region of the third conductive layer is configured to serve as a gate electrode,

wherein the oxide semiconductor layer is in direct contact with a top surface of the first conductive layer,

wherein a second region of the third conductive layer comprises a region provided in an opening of the first insulating layer,

wherein the first region and the second region of the third conductive layer comprise the same metal material,

wherein the opening of the first insulating layer and the second region of the second conductive layer overlap each other, and

wherein the opening of the first insulating layer and the oxide semiconductor layer do not overlap each other.

2. The semiconductor device according to claim 1 , wherein the first conductive layer and the second conductive layer comprise molybdenum.

3. The semiconductor device according to claim 1 , wherein the second conductive layer overlaps with an edge of the oxide semiconductor layer.

4. An electronic device comprising the semiconductor device according to claim 1 , wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.

5. A semiconductor device comprising:

a semiconductor layer;

a first conductive layer;

a first insulating layer;

a second conductive layer; and

a third conductive layer,

wherein the first conductive layer comprises an opening,

wherein the semiconductor layer comprises a channel formation region of a transistor,

wherein the semiconductor layer and the opening of the first conductive layer overlap each other,

wherein a first region of the second conductive layer and the semiconductor layer overlap each other,

wherein the first region of the second conductive layer and the opening of the first conductive layer overlap each other,

wherein a second region of the second conductive layer is electrically connected to the first conductive layer,

wherein the first region and the second region of the second conductive layer comprise the same metal material,

wherein the first insulating layer is in contact with a top surface of the first region of the second conductive layer and a top surface of the second region of the second conductive layer,

wherein a first region of the third conductive layer is configured to serve as a gate electrode of the transistor,

wherein the first region of the third conductive layer and the first region of the second conductive layer overlap each other,

wherein a second region of the third conductive layer and the second region of the second conductive layer overlap each other, and

wherein the first region and the second region of the third conductive layer comprise the same metal material.

6. The semiconductor device according to claim 5 , wherein the first conductive layer and the third conductive layer comprise molybdenum.

7. The semiconductor device according to claim 5 , wherein the second conductive layer overlaps with an edge of the semiconductor layer.

8. An electronic device comprising the semiconductor device according to claim 5 , wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.

9. A semiconductor device comprising:

a semiconductor layer;

a first conductive layer;

a first insulating layer;

a second conductive layer; and

a third conductive layer,

wherein the first conductive layer comprises an opening,

wherein the semiconductor layer comprises a channel formation region of a transistor,

wherein the semiconductor layer and the opening of the first conductive layer overlap each other,

wherein a first region of the second conductive layer and the semiconductor layer overlap each other,

wherein the first region of the second conductive layer and the opening of the first conductive layer overlap each other,

wherein a second region of the second conductive layer is electrically connected to the first conductive layer,

wherein the first region and the second region of the second conductive layer comprise the same metal material,

wherein the first insulating layer is in contact with a top surface of the first region of the second conductive layer and a top surface of the second region of the second conductive layer,

wherein a first region of the third conductive layer is configured to serve as a gate electrode of the transistor,

wherein the first region of the third conductive layer and the semiconductor layer overlap each other,

wherein the first region of the third conductive layer and the first region of the second conductive layer overlap each other,

wherein a second region of the third conductive layer and the second region of the second conductive layer overlap each other, and

wherein the first region and the second region of the third conductive layer comprise the same metal material.

10. The semiconductor device according to claim 9 , wherein the first conductive layer and the third conductive layer comprise molybdenum.

11. The semiconductor device according to claim 9 , wherein the second conductive layer overlaps with an edge of the semiconductor layer.

12. An electronic device comprising the semiconductor device according to claim 9 , wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.

Priority Claims (2)
JP 2009-242757 · Oct 21, 2009 · national
JP 2009-278997 · Dec 8, 2009 · national
Continuity (7)
Continuation 17411401 · Aug 25, 2021
Continuation 16862658 · Apr 30, 2020
Continuation 16130447 · Sep 13, 2018
Continuation 14881500 · Oct 13, 2015
Continuation 14540326 · Nov 13, 2014
Continuation 12906538 · Oct 18, 2010
Related Publication 20240203337A1 · Jun 20, 2024
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