IP Library Assignment 032458/0958
Patent Assignment
Reel/Frame 032458/0958

Release of Security Interest to Reel/Frame: 013964/0378

Recorded: 2014-03-17 Pages: 15
Assignor
CITICORP USA, INC.
Executed: 2014-03-13
Assignees
MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.)
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
MEMC PASADENA, INC.
3000 N. SOUTH STREET, PASADENA, TEXAS, 77503
PLASMASIL, L.L.C.
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
SIBOND, L.L.C.
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
MEMC SOUTHWEST INC.
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
MEMC INTERNATIONAL, INC. (NOW KNOWN AS SUNEDISON INTERNATIONAL, INC.)
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
Covered Properties (18)
Method of Determining Performance Characteristics of Polishing Pads
Patent: 6,293,139 →
Application: 09/432,928 →
Method and Apparatus for Forming a Silicon Wafer with a Denuded Zone
Patent: 6,599,815 →
Application: 09/607,391 →
Radio frequency identification system and method for tracking silicon wafers
Patent: 6,330,971 →
Application: 09/677,909 →
Polishing Apparatus, Polishing Head and Method
Patent: 6,712,673 →
Application: 09/682,677 →
Publication: US 2003/0068958
Carrier for Cleaning Silicon Wafers
Patent: 6,520,191 →
Application: 09/807,907 →
Process for Preparing a Silicon Melt
Patent: 6,652,645 →
Application: 09/943,600 →
Publication: US 2002/0020339
Method for the Production of Low Defect Density Silicon
Patent: 6,858,307 →
Application: 09/972,608 →
Publication: US 2002/0056410
Process for Reclaiming Semiconductor Wafers and Reclaimed Wafers
Patent: 7,008,874 →
Application: 10/022,967 →
Publication: US 2002/0086539
SOI structure having a device layer which is vacancy dominated and substantially free fo agglomerated vacancy type defects
Patent: 6,849,901 →
Application: 10/038,084 →
Publication: US 2002/0113265
Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
Patent: 6,846,539 →
Application: 10/054,629 →
Publication: US 2002/0100410
Process for Producing Thermally Annealed Wafers Having Improved Internal Gettering
Patent: 6,686,260 →
Application: 10/067,070 →
Publication: US 2002/0170631
Thermal Annealing Process for Producing Low Defect Density Single Crystal Silicon
Patent: 6,743,289 →
Application: 10/073,506 →
Publication: US 2002/0083889
Thermal Annealing Process for Producing Silicon Wafers with Improved Surface Characteristics
Patent: 6,743,495 →
Application: 10/113,378 →
Publication: US 2002/0174828
Low Defect Density Epitaxial Wafer and a Process for the Preparation Thereof
Patent: 6,632,278 →
Application: 10/135,597 →
Publication: US 2002/0170485
Silicon on Insulator Struture Having an Epitaxial Layer and Intrinsic Gettering
Patent: 6,930,375 →
Application: 10/177,444 →
Publication: US 2003/0008435
Controlled Neck Growth Process for Single Crystal Silicon
Patent: 6,869,477 →
Application: 10/204,654 →
Publication: US 2003/0209186
Modified Susceptor for Use in Chemical Vapor Deposition Process
Patent: 6,652,650 →
Application: 10/229,415 →
Publication: US 2003/0041799
Ideal Oxygen Precipitating Silicon Wafers with Nitrogen/Carbon Stabilized Oxygen Precipitate Nucleation Centers and Process for Making the Same
Patent: 6,808,781 →
Application: 10/328,481 →
Publication: US 2003/0136961
Related Assignments (11)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
Release of Security Interest Dec 26, 2013
From: BANK OF AMERICA, N.A.
To: ENFLEX CORPORATION; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0031 →
Release of Security Interest Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
Security Agreement Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
Release of Security Interest Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
Release of Security Interest to Reel/Frame: 012280/0161 Mar 17, 2014
From: CITICORP USA, INC.
To: MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.); MEMC PASADENA, INC.; PLASMASIL, L.L.C.; SIBOND, L.L.C.
Reel/Frame 032458/0794 →
Release of Security Interest to Reel/Frame: 012273/0145 Mar 17, 2014
From: CITICORP USA, INC.
To: MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.); MEMC PASADENA, INC.; PLASMASIL, L.L.C.; SIBOND, L.L.C.
Reel/Frame 032458/0866 →
Release of Security Interest to Reel/Frame: 012365/0345 Mar 17, 2014
From: CITICORP USA, INC.
To: MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.); MEMC PASADENA, INC.; PLASMASIL, L.L.C.; SIBOND, L.L.C.
Reel/Frame 032458/0901 →
Assignment of Assignor's Interest May 27, 2014
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
Reel/Frame 033023/0430 →
Notice of License Agreement Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →
Assignment of Assignor's Interest Jun 7, 2018
From: SUNEDISON SEMICONDUCTOR LIMITED; MEMC JAPAN LIMITED; MEMC ELECTRONIC MATERIALS S.P.A.
To: GLOBALWAFERS CO., LTD.
Reel/Frame 046327/0001 →