IP Library › Granted Patent US 12,205,926
Granted Patent B2
US 12,205,926 · App. 18/451,674 · Granted Jan 21, 2025

TSV as pad

Inventors: Guilian Gao (San Jose, CA); Bongsub Lee (Santa Clara, CA); Gaius Gillman Fountain, Jr. (Youngsville, NC); Cyprian Emeka Uzoh (San Jose, CA); Belgacem Haba (Saratoga, CA); Laura Wills Mirkarimi (Sunol, CA); Rajesh Katkar (Milpitas, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L25/0657H01L21/76843H01L21/76895H01L21/76898H01L23/481H01L23/4824H01L23/5226H01L24/09H01L24/32H01L24/80H01L24/83H01L2224/08145H01L2224/80895H01L2224/80896H01L2225/06524H01L2225/06544
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Quick Facts
Patent No.
US 12,205,926
App. No.
18/451,674
Granted
Jan 21, 2025
Kind
B2
Abstract

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a through-silicon via (TSV) may be disposed through at least one of the microelectronic substrates. The TSV is exposed at the bonding interface of the substrate and functions as a contact surface for direct bonding.

Claims (39)

1. A microelectronic structure having a first side and second side opposite the first side, the microelectronic structure comprising:

a semiconductor base layer;

an electrically conductive via extending at least partially through the semiconductor base layer;

a nonconductive bonding layer over the semiconductor base layer, the nonconductive bonding layer comprising:

a dielectric layer over the semiconductor base layer and extending along a portion of the electrically conductive via; and

an insulator on the dielectric layer; and

a bonding surface at the second side of the microelectronic structure at least partially defined by a portion of the dielectric layer, a surface of the insulator, and an exposed end portion of the electrically conductive via.

2. The microelectronic structure of claim 1 , wherein the dielectric layer comprises a diffusion barrier.

3. The microelectronic structure of claim 1 , wherein the insulator is activated as a bonding surface.

4. The microelectronic structure of claim 1 , wherein the electrically conductive via extends fully through the semiconductor base layer.

5. A bonded structure comprising:

the microelectronic structure of claim 1 ; and

a second substrate having a bonding surface, the bonding surface of the second substrate comprising a nonconductive bonding layer and an exposed contact feature,

wherein the nonconductive bonding layer of the microelectronic structure is bonded to the nonconductive bonding layer of the second substrate without an intervening adhesive, and

wherein the exposed electrically conductive via of the microelectronic structure is bonded to the exposed contact feature of the second substrate without an intervening adhesive.

6. The bonded structure of claim 5 , wherein the exposed contact feature of the second substrate is an exposed pad.

7. The bonded structure of claim 5 , wherein the exposed contact feature of the second substrate is an exposed electrically conductive via recessed from the nonconductive bonding layer of the second substrate, and embedded at least partially in the second substrate.

8. The microelectronic structure of claim 1 , wherein the nonconductive bonding layer further comprises a third layer over the insulator.

9. The microelectronic structure of claim 8 , wherein the third layer comprises an additional dielectric layer.

10. The microelectronic structure of claim 8 , wherein the third layer comprises silicon oxide.

11. The microelectronic structure of claim 8 , wherein the third layer comprises a different material compared to the insulator.

12. The microelectronic structure of claim 8 , wherein the third layer and the insulator comprise the same material.

13. The microelectronic structure of claim 8 , wherein the third layer is in direct contact with the insulator.

14. The microelectronic structure of claim 8 , wherein the third layer and the insulator have different residue stress characteristics.

15. The microelectronic structure of claim 14 , wherein one of the third layer and the insulator is in tension, and the other of the third layer and the insulator is in compression.

16. A microelectronic structure having a first side and a second side opposite the first side, the microelectronic structure comprising:

a semiconductor base layer;

an insulator on the second side of the microelectronic structure;

at least one electrically conductive via exposed at the second side of the microelectronic structure and embedded at least partially in the semiconductor base layer; and

a dielectric layer separating the insulator from the semiconductor base layer and separating the insulator from the at least one electrically conductive via at the second side of the microelectronic structure.

17. The microelectronic structure of claim 16 , wherein the dielectric layer comprises a diffusion barrier.

18. A bonded structure comprising:

the microelectronic structure of claim 16 ; and

a second substrate having a bonding surface bonded to the second side of the microelectronic structure, the bonding surface of the second substrate comprising at least one exposed conductive contact feature,

wherein at least one exposed conductive contact feature of the second substrate is bonded to at least one electrically conductive via of the microelectronic structure.

19. The microelectronic structure of claim 16 , wherein the at least one electrically conductive via extends fully through the semiconductor base layer.

20. The microelectronic structure of claim 16 , further comprising a third layer over the insulator.

21. The microelectronic structure of claim 20 , wherein the third layer and the insulator have different residue stress characteristics.

22. The microelectronic structure of claim 21 , wherein one of the third layer and the insulator is in tension, and the other of the third layer and the insulator is in compression.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2023
From: GAO, GUILIAN; LEE, BONGSUB; FOUNTAIN, GAIUS GILLMAN, JR.; UZOH, CYPRIAN EMEKA; HABA, BELGACEM; MIRKARIMI, LAURA WILLS; KATKAR, RAJESH
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 064699/0004 →
CHANGE OF NAME Recorded Aug 24, 2023
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 064716/0001 →
Continuity (3)
Continuation 16439360 · Jun 12, 2019
Provisional Application 62684505 · Jun 13, 2018
Related Publication 20240088101A1 · Mar 14, 2024
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