Liquid crystal display device and electronic device including the same
A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.
1 . A semiconductor device comprising:
a first transistor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a scan line,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a clock signal line,
wherein in a plan view, an area where a first conductive layer serving as the one of the source electrode and the drain electrode of the first transistor and a second conductive layer serving as a gate electrode of the first transistor overlapping with each other is larger than an area where a third conductive layer serving as the other of the source electrode and the drain electrode of the first transistor and the second conductive layer overlapping with each other,
wherein in the plan view, the first conductive layer comprises a first region overlapping with the second conductive layer and sandwiched between regions of the third conductive layer,
wherein in the plan view, the third conductive layer comprises a second region overlapping with the second conductive layer and sandwiched between regions of the first conductive layer, and
wherein a width of the first conductive layer in the first region is larger than a width of the third conductive layer in the second region.
2 . The semiconductor device according to claim 1 , wherein the first conductive layer is electrically connected to the scan line through a transparent electrode.
3 . The semiconductor device according to claim 2 ,
wherein the first conductive layer comprises a third region overlapping with the transparent electrode, and
wherein a width of the first conductive layer in the third region is larger than the width of the third conductive layer in the second region.
4 . The semiconductor device according to claim 1 , wherein a potential of the gate electrode of the first transistor can be higher than a high level potential of the clock signal line.
5 . The semiconductor device according to claim 1 , wherein a potential of the gate electrode of the first transistor can be lower than a low level potential of the clock signal line.
6 . A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a scan line,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the scan line,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a clock signal line,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a power supply line,
wherein in a plan view, an area where a first conductive layer serving as the one of the source electrode and the drain electrode of the first transistor and a second conductive layer serving as a gate electrode of the first transistor overlapping with each other is larger than an area where a third conductive layer serving as the other of the source electrode and the drain electrode of the first transistor and the second conductive layer overlapping with each other,
wherein in the plan view, an area where the first conductive layer serving as the one of the source electrode and the drain electrode of the second transistor and a fourth conductive layer serving as a gate electrode of the second transistor overlapping with each other is smaller than an area where a fifth conductive layer serving as the other of the source electrode and the drain electrode and the fourth conductive layer overlapping with each other,
wherein in the plan view, the first conductive layer comprises a first region overlapping with the second conductive layer and sandwiched between regions of the third conductive layer,
wherein in the plan view, the third conductive layer comprises a second region overlapping with the second conductive layer and sandwiched between regions of the first conductive layer, and
wherein a width of the first conductive layer in the first region is larger than a width of the third conductive layer in the second region.
7 . The semiconductor device according to claim 6 , wherein the first conductive layer is electrically connected to the scan line through a transparent electrode.
8 . The semiconductor device according to claim 7 ,
wherein the first conductive layer comprises a third region overlapping with the transparent electrode, and
wherein a width of the first conductive layer in the third region is larger than the width of the third conductive layer in the second region.
9 . The semiconductor device according to claim 6 ,
wherein in the plan view, the first conductive layer comprises a third region overlapping with the fourth conductive layer and sandwiched between regions of the fifth conductive layer,
wherein in the plan view, the fifth conductive layer comprises a fourth region overlapping with the fourth conductive layer and sandwiched between regions of the first conductive layer,
wherein the width of the first conductive layer in the first region is larger than a width of the first conductive layer in the third region, and
wherein the width of the first conductive layer in the first region is larger than a width of the fifth conductive layer in the fourth region.
10 . The semiconductor device according to claim 9 , wherein the first conductive layer is electrically connected to the scan line through a transparent electrode.
11 . The semiconductor device according to claim 10 ,
wherein the first conductive layer comprises a fifth region overlapping with the transparent electrode, and
wherein a width of the first conductive layer in the fifth region is larger than the width of the third conductive layer in the second region.
12 . The semiconductor device according to claim 11 ,
wherein the width of the first conductive layer in the fifth region is larger than a width of the third conductive layer in the first region, and
wherein the width of the first conductive layer in the fifth region is larger than the width of the fifth conductive layer in the fourth region.
13 . The semiconductor device according to claim 6 , wherein a potential of the gate electrode of the first transistor can be higher than a high level potential of the clock signal line.
14 . The semiconductor device according to claim 6 , wherein a potential of the gate electrode of the first transistor can be lower than a low level potential of the clock signal line.