IP Library › Granted Patent US 12,300,488
Granted Patent B2
US 12,300,488 · App. 18/501,395 · Granted May 13, 2025

Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

Inventors: Guangbi Yuan (Beaverton, OR); Ieva Narkeviciute (Portland, OR); Bo Gong (Sherwood, OR); Bhadri N. Varadarajan (Beaverton, OR)
Assignee: Lam Research Corporation
H01L21/02274C23C16/0272C23C16/308C23C16/45536C23C16/45553C23C16/56H01J37/32357H01L21/02126H01L21/0214H01L21/02167H01L21/0228H01J2237/332
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Quick Facts
Patent No.
US 12,300,488
App. No.
18/501,395
Granted
May 13, 2025
Kind
B2
Abstract

A doped or undoped silicon carbide (SiC x O y N z ) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

Claims (43)

1. An apparatus ( 700 ) for depositing a doped or undoped silicon carbide (SiCxOyNz) film in one or more features of a substrate ( 712 ), the apparatus ( 700 ) comprising:

a reaction chamber ( 704 ) including a substrate support ( 714 ) for supporting the substrate ( 712 );

a precursor supply source ( 740 ) configured to supply a silicon-containing precursor through a gas outlet ( 742 ) into the reaction chamber ( 704 ); and

a remote plasma source ( 702 ) separate from and upstream of the reaction chamber ( 704 ), wherein the remote plasma source ( 702 ) is configured to generate a remote hydrogen plasma and deliver the remote hydrogen plasma through a multiport gas distributor ( 706 ) into the reaction chamber ( 704 ); and

a controller ( 750 ) configured with instructions to perform the following operations:

deposit a first thickness of the SiCxOyNz film in the one or more features of the substrate ( 712 ), wherein x has a value greater than zero, y has a value equal to or greater than zero, and z has a value equal to or greater than zero;

expose the first thickness of the SiCxOyNz film to the remote hydrogen plasma under conditions that increase a size of an opening near a top surface of each of the one or more features, wherein a concentration of hydrogen for the remote hydrogen plasma is at least 15% by volume with a balance of the inert carrier gas; and

deposit a second thickness of the SiCxOyNz film after exposing the first thickness of the SiCxOyNz film to the remote hydrogen plasma, wherein each of the first thickness and the second thickness is between 0.5 Å and 4.5 Å.

2. The apparatus of claim 1 , wherein the controller ( 750 ) is configured to repeat operations of exposing the SiCxOyNz film to the remote hydrogen plasma and depositing the SiCxOyNz film in the one or more features until the one or more features are filled or substantially filled.

3. The apparatus of claim 1 , wherein the controller ( 750 ) is configured with instructions to control conditions of the remote hydrogen plasma generated in the remote plasma source ( 702 ) including at least one of a treatment time, a treatment frequency, a treatment power, or a remote plasma gas composition, wherein at least one of the treatment time, the treatment frequency, the treatment power, or the remote plasma gas composition are controlled so that the size of the opening near the top surface of each of the one or more features is increased relative to a size of an opening near a bottom surface of each of the one or more features.

4. The apparatus of claim 1 , wherein the controller ( 750 ) is configured with instructions to expose the first thickness of the SiCxOyNz film to the remote hydrogen plasma with the treatment time being between about 0.5 seconds and about 120 seconds.

5. The apparatus of claim 4 , wherein the controller ( 750 ) is configured with instructions to expose the first thickness of the SiCxOyNz film to the remote hydrogen plasma with the treatment time being between about 2 seconds and about 20 seconds.

6. The apparatus of claim 1 , wherein the controller ( 750 ) is configured with instructions to expose the first thickness of the SiCxOyNz film to the remote hydrogen plasma having a concentration of hydrogen that is at least 25% by volume with a balance of inert carrier gas.

7. The apparatus of claim 1 , wherein an atomic concentration of carbon in the SiCxOyNz is between 10% and 40%.

8. The apparatus of claim 1 , wherein the controller ( 750 ) configured with instructions to deposit a first thickness of the SiCxOyNz film, to expose the first thickness of the SiCxOyNz film to remote hydrogen plasma, and to deposit the second thickness of the SiCxOyNz film is configured to perform said operations in the reaction chamber ( 704 ).

9. An apparatus ( 700 ) for depositing a low-k gapfill material in one or more features of a substrate ( 712 ), the apparatus ( 700 ) comprising:

a reaction chamber ( 704 ) including a substrate support ( 714 ) for supporting the substrate ( 712 );

a precursor supply source ( 740 ) configured to supply a deposition precursor through a gas outlet ( 742 ) into the reaction chamber ( 704 );

a remote plasma source ( 702 ) separate from and upstream of the reaction chamber ( 704 ), wherein the remote plasma source ( 702 ) is configured to generate reactant radicals and introduce the reactant radicals through a showerhead ( 706 ) into the reaction chamber ( 704 ) towards the substrate ( 712 ), wherein the reactant radicals react with the deposition precursor to deposit a first thickness of the low-k gapfill material in the one or more features of the substrate ( 712 ); and

a controller ( 750 ) configured with instructions for performing the following operations:

(a) deposit the first thickness of the low-k gapfill material in the one or more features of the substrate ( 712 );

(b) expose the low-k gapfill material to remote hydrogen plasma to treat the low-k gapfill material, wherein a concentration of hydrogen for the remote hydrogen plasma is at least 15% by volume with a balance of inert carrier gas; and

(c) repeat operations (a) and (b) until the one or more features of the substrate ( 712 ) are filled or substantially filled with the low-k gapfill material, wherein a thickness of the low-k gapfill material is between 0.5 Å and 4.5 Å per deposition-exposure cycle.

10. The apparatus of claim 9 , wherein the controller ( 750 ) is configured with instructions for depositing the first thickness of the low-k gapfill material conformally in the one or more features of the substrate ( 712 ), wherein the first thickness of the low-k gapfill material has a conformality of at least 80%.

11. The apparatus of claim 9 , further comprising:

a source gas supply ( 726 ) fluidly coupled to the remote plasma source ( 702 ) and configured to supply a source gas to the remote plasma source ( 702 ), wherein the source gas comprises a mixture of hydrogen gas and an inert gas, and wherein a concentration of the source gas is at least 25% by volume of hydrogen gas with a balance of the inert gas.

12. The apparatus of claim 9 , further comprising:

an additional gas supply ( 728 ) fluidly coupled with the remote plasma source ( 702 ) and configured to supply a co-reactant to the remote plasma source ( 702 ), wherein the remote plasma source ( 702 ) is configured to introduce the co-reactant into the reaction chamber ( 704 ), and wherein the reactant radicals react with the co-reactant and the deposition precursor to deposit the first thickness of the low-k gapfill material.

13. The apparatus of claim 12 , wherein the controller ( 750 ) is configured to tune a composition of the low-k gapfill material by the co-reactant.

14. The apparatus of claim 9 , wherein the low-k gapfill material comprises doped or undoped silicon carbide, wherein an atomic concentration of carbon in the first thickness of the low-k gapfill material is between about 10% and about 40%.

15. The apparatus of claim 9 , wherein the controller ( 750 ) configured with instructions for exposing the low-k gapfill material to remote hydrogen plasma is configured with instructions for modulating at least one of a treatment time, a treatment frequency, a treatment power, or a remote plasma gas composition to densify and shrink the first thickness of the low-k gapfill material during exposure to the remote hydrogen plasma.

16. The apparatus of claim 9 , wherein operations (a) and (b) are performed without introducing a vacuum break in between the operations.

17. An apparatus ( 700 ) for depositing silicon carbide gapfill material in one or more features of a substrate ( 712 ), the apparatus ( 700 ) comprising:

a reaction chamber ( 704 ) including a substrate support ( 714 ) for supporting the substrate ( 712 );

a precursor supply source ( 740 ) configured to supply a silicon-containing precursor through a gas outlet ( 742 ) into the reaction chamber ( 704 );

a remote plasma source ( 702 ) separate from and upstream of the reaction chamber ( 704 ), wherein the remote plasma source ( 702 ) is configured to generate reactant radicals and introduce the reactant radicals through a showerhead ( 706 ) into the reaction chamber ( 704 ) towards the substrate ( 712 ), wherein the reactant radicals react with the silicon-containing precursor to deposit a first thickness of the silicon carbide gapfill material in the one or more features of the substrate ( 712 ); and

a controller ( 750 ) configured with instructions for performing the following operations:

(a) deposit the first thickness of the silicon carbide gapfill material in the one or more features of the substrate ( 712 );

(b) expose the silicon carbide gapfill material to remote hydrogen plasma under conditions to densify and shrink the first thickness of the silicon carbide gapfill material, wherein a concentration of hydrogen for the remote hydrogen plasma is at least 15% by volume with a balance of inert carrier gas; and

(c) repeat operations (a) and (b) until the one or more features of the substrate ( 712 ) are filled or substantially filled with the silicon carbide gapfill material, wherein a thickness of the silicon carbide gapfill material is between 0.5 Å and 4.5 Å per deposition-exposure cycle.

18. The apparatus of claim 17 , wherein the controller ( 750 ) configured with instructions for exposing the silicon carbide gapfill material to the remote hydrogen plasma is configured with instructions for modulating at least one of a treatment time, a treatment frequency, a treatment power, or a remote plasma gas composition to remove hydrogen and increasing cross-linking in the silicon carbide gapfill material.

19. The apparatus of claim 17 , wherein the controller ( 750 ) configured with instructions for exposing the silicon carbide gapfill material to the remote hydrogen plasma is configured with instructions for modulating at least one of a treatment time, a treatment frequency, a treatment power, or a remote plasma gas composition to increase a size of an opening near a top surface of each of the one or more features relative to a bottom surface of each of the one or more features.

20. The apparatus of claim 17 , wherein a treatment time and a treatment power of the remote hydrogen plasma is based at least in part on a composition of the silicon carbide gapfill material.

Continuity (3)
Continuation 17286407
Provisional Application 62748186 · Oct 19, 2018
Related Publication 20240063015A1 · Feb 22, 2024
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