Granted Patent B2

US 12,359,311 · App. 18/175,513 · Granted Jul 15, 2025

Inventors: Matthew Scott Weimer (Portland, OR); Bhadri N. Varadarajan (Beaverton, OR); Bo Gong (Sherwood, OR); Zhe Gui (Beaverton, OR)

Assignee: Lam Research Corporation

C23C16/325C23C16/045C23C16/452C23C16/505H01L21/02126H01L21/02167H01L21/02211H01L21/02216H01L21/02222H01L21/02274H01L21/3105H01L21/76831H01L21/76834H10D64/671H10D64/679H01L21/7682H01L2221/1047

Abstract

Claims (25)

1. A method of depositing a silicon carbide film on a substrate, the method comprising:

providing a substrate having one or more recessed features in a reaction chamber;

flowing a silicon-containing precursor into the reaction chamber towards the substrate, wherein the silicon-containing precursor has (i) one or more Si—H bonds and/or Si—Si bonds, (ii) one or more Si—C bonds, Si—N, and/or Si—O bonds, (iii) no C—O bonds, and (iv) no C—N bonds;

flowing a non-depositing additive into the reaction chamber along with the silicon-containing precursor along a flow path without exposure to plasma, wherein each of the non-depositing additive and the silicon-containing precursor is flowed into the reaction chamber via one or more gas outlets downstream from a remote plasma source, wherein the non-depositing additive is a hydrocarbon molecule;

generating, from a hydrogen source gas, radicals of hydrogen in the remote plasma source that are generated upstream of the silicon-containing precursor and the non-depositing additive; and

introducing the radicals of hydrogen into the reaction chamber and towards the substrate via a showerhead that is positioned upstream of the one or more gas outlets, wherein the radicals of hydrogen react with the silicon-containing precursor and the non-depositing additive in a chemical vapor deposition (CVD) reaction to form a doped or undoped silicon carbide film on the substrate, wherein the doped or undoped silicon carbide film has a conformality of at least 90% in the one or more recessed features.

2. The method of claim 1 , wherein the non-depositing additive in the CVD reaction does not change an atomic concentration of carbon or silicon in the doped or undoped silicon carbide film by an amount equal to or greater than 5% compared to deposition of the doped or undoped silicon carbide film without depositing the non-depositing additive.

3. The method of claim 1 , wherein the radicals of hydrogen are radicals of hydrogen in a ground state in an environment adjacent to the substrate.

4. The method of claim 1 , wherein the doped or undoped silicon carbide film is a doped silicon carbide film of silicon oxycarbide (SiCO), silicon carbonitride (SiCN), or silicon oxycarbonitride (SiOCN).

5. The method of claim 1 , wherein the hydrocarbon molecule has one or more carbon-to-carbon double bonds or triple bonds.

6. The method of claim 5 , wherein the hydrocarbon molecule includes propylene, ethylene, butene, pentene, butadiene, pentadiene, hexadiene, heptadiene, toluene, benzene, acetylene, propyne, butyne, pentyne, or hexyne.

7. The method of claim 1 , wherein the silicon-containing precursor and the non-depositing additive are simultaneously flowed along the same flow path into the reaction chamber.

8. The method of claim 1 , wherein each of the one or more recessed features has an aspect ratio of greater than 10:1.

9. The method of claim 1 , wherein the silicon-containing precursor includes an alkylcarbosilane, a siloxane, or a silazane.

10. A method of depositing a silicon carbide film on a substrate, the method comprising:

providing a substrate having one or more recessed features in a reaction chamber;

flowing a silicon-containing precursor into the reaction chamber towards the substrate, wherein the silicon-containing precursor has (i) one or more Si—H bonds and/or Si—Si bonds, (ii) one or more Si—C bonds, Si—N, and/or Si—O bonds, (iii) no C—O bonds, and (iv) no C—N bonds;

flowing a non-depositing additive into the reaction chamber along with the silicon-containing precursor without exposure to plasma, wherein each of the non-depositing additive and the silicon-containing precursor is flowed into the reaction chamber via one or more gas outlets downstream from a remote plasma source, wherein the non-depositing additive is a hydrocarbon molecule having one or more carbon-to-carbon double bonds or triple bonds;

generating, from a hydrogen source gas, radicals of hydrogen in the remote plasma source that are generated upstream of the silicon-containing precursor and the non-depositing additive; and

introducing the radicals of hydrogen into the reaction chamber and towards the substrate via a showerhead that is positioned upstream of the one or more gas outlets, wherein the radicals of hydrogen are in a ground state to react with the silicon-containing precursor and the non-depositing additive in a chemical vapor deposition (CVD) reaction to form a doped or undoped silicon carbide film on the substrate, wherein the doped or undoped silicon carbide film has a conformality of at least 90% in the one or more recessed features.

11. The method of claim 10 , wherein the non-depositing additive in the CVD reaction does not change an atomic concentration of carbon or silicon in the doped or undoped silicon carbide film by an amount equal to or greater than 5% compared to deposition of the doped or undoped silicon carbide film without depositing the non-depositing additive.

12. The method of claim 10 , wherein the hydrocarbon molecule has a carbon chain between 3 carbon atoms and 7 carbon atoms.

13. The method of claim 10 , wherein the hydrocarbon molecule comprises propylene, ethylene, butene, pentene, butadiene, pentadiene, hexadiene, heptadiene, toluene, benzene, acetylene, propyne, butyne, pentyne, or hexyne.

14. The method of claim 10 , wherein a percentage of C—C bonds in the doped or undoped silicon carbide film is equal to or less than 2%.

15. The method of claim 10 , wherein each of the one or more recessed features has an aspect ratio of greater than 10:1.

Continuity (5)

References Cited (400)

Cited By (3)

US 12,442,080 US 12,580,159 US 12,747,502