IP Library › Granted Patent US 12,347,820
Granted Patent B2
US 12,347,820 · App. 18/507,478 · Granted Jul 1, 2025

Stacked devices and methods of fabrication

Inventors: Paul M. Enquist (Cary, NC); Belgacem Haba (Saratoga, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L25/18H01L21/76898H01L23/3171H01L23/481H01L24/09H01L25/074H01L25/50H10D84/038H10D88/01H10F39/018H10F39/026H10F39/804H10F39/8053H10F39/8063H10F39/809H10F39/811H01L2224/02379H01L2924/1431H01L2924/1434
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Quick Facts
Patent No.
US 12,347,820
App. No.
18/507,478
Granted
Jul 1, 2025
Kind
B2
Abstract

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

Claims (19)

1. A method of forming a bonded sensor structure, the method comprising:

bonding a first side of a connecting wafer to a second side of a sensor wafer to form a first bonded structure having a first side with the sensor wafer and a second side opposite the first side;

hybrid bonding the second side of the first bonded structure to a first side of a logic element;

after hybrid bonding the second side of the first bonded structure to the first side of the logic element, processing a first side of the sensor wafer opposite the second side of the sensor wafer, wherein processing the first side of the sensor wafer includes providing optical features over the first side of the sensor wafer to form the bonded sensor structure; and

opening contacts to the bonded sensor structure.

2. The method of claim 1 , wherein bonding the first side of the connecting wafer to the second side of the sensor wafer comprises wafer-to-wafer bonding.

3. The method of claim 1 , wherein hybrid bonding the second side of the wafer to the first side of a logic element comprises hybrid bonding a logic die to the second side of the wafer, further comprising depositing an insulating material on sides of the logic die.

4. The method of claim 1 , wherein the connecting wafer comprises a first handle wafer, further comprising:

bonding a first side of the sensor wafer to a second handle wafer; and

removing the second handle wafer from the first side of the sensor wafer after hybrid bonding the second side of the first handle wafer to the logic element.

5. The method of claim 1 , wherein processing the first side of the sensor wafer further comprises thinning the sensor wafer after bonding the first side of the connecting wafer to the second side of the sensor wafer.

6. The method of claim 5 , wherein providing optical features over the first side of the sensor wafer comprises depositing a filter array.

7. The method of claim 6 , wherein providing optical features over the first side of the sensor wafer further comprises depositing an on-chip lens.

8. The method of claim 1 , wherein hybrid bonding the second side of the connecting wafer to the first side of the logic element comprises hybrid bonding the second side of the connecting wafer to a logic die.

9. The method of claim 8 , wherein hybrid bonding the second side of the connecting wafer to the first side of the logic element further comprises hybrid bonding the second side of the connecting wafer to a plurality of logic dies and depositing an insulating material between logic dies of the plurality.

10. The method of claim 1 , further comprising thinning the connecting wafer after bonding the first side of the connecting wafer to the second side of the sensor wafer.

11. The method of claim 10 , further comprising providing electrical connections between the first side of the logic element and the second side of the sensor wafer through the connecting wafer.

12. The method of claim 11 , further comprising providing a layer of bonding pads as part of the electrical connections.

13. The method of claim 1 , wherein opening contacts comprises opening contacts from the first side of the sensor wafer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2023
From: ENQUIST, PAUL M.; HABA, BELGACEM
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 065545/0299 →
CHANGE OF NAME Recorded Nov 13, 2023
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 065563/0247 →
Continuity (4)
Continuation 17586236 · Jan 27, 2022
Continuation 16413429 · May 15, 2019
Provisional Application 62671917 · May 15, 2018
Related Publication 20240088120A1 · Mar 14, 2024
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