IP Library › Granted Patent US 12,571,093
Granted Patent B2
US 12,571,093 · App. 18/303,095 · Granted Mar 10, 2026

Selective deposition of silicon oxide on metal surfaces

Inventors: Andrea Illiberi (Leuven, BE); Giuseppe Alessio Verni (Antwerp, BE); Shaoren Deng (Ghent, BE); Daniele Chiappe (Espoo, FI); Eva Tois (Helsinki, FI); Marko Tuominen (Helsinki, FI); Michael Givens (Oud-Heverlee, BE)
Assignee: ASM IP Holding B.V.
C23C16/401C23C16/0281C23C16/04C23C16/45523C23C16/45553H01L21/02214H01L21/0228H01L21/32B01J31/143
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,571,093
App. No.
18/303,095
Filed
Apr 19, 2023
Granted
Mar 10, 2026
Kind
B2
Art Unit
1717
USPC
427/579
Abstract

Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

Claims (24)

1 . A method of selectively depositing silicon oxide on a metal surface of a substrate relative to a dielectric surface of the substrate, the method comprising, in order:

contacting the substrate with a passivation agent to selectively passivate the dielectric surface relative to the metal surface of the substrate;

contacting the substrate having the dielectric surface thereof selectively passivated with a metal catalyst to selectively deposit the metal catalyst on the metal surface of the substrate relative to the dielectric surface of the substrate to thereby form a catalyzed metal surface, wherein the metal catalyst comprises dimethylaluminum isopropoxide (DMAI); and

contacting the substrate having the catalyzed metal surface with a silicon reactant to selectively deposit silicon oxide on the catalyzed metal surface relative to the dielectric surface.

2 . The method of claim 1 , wherein the step of contacting the substrate with the metal catalyst is greater than 75% selective to the metal surface as compared to the passivated dielectric surface.

3 . The method of claim 1 , wherein the step of contacting the substrate having the catalyzed metal surface with the silicon reactant is greater than 75% selective to the catalyzed metal surface as compared to the passivated dielectric surface.

4 . The method of claim 1 , wherein the step of contacting the substrate with the passivating agent is greater than 95% selective to the dielectric surface as compared to the metal surface.

5 . The method of claim 1 , wherein the step of contacting the substrate with the metal catalyst is greater than 95% selective to the metal surface as compared to the passivated dielectric surface.

6 . The method of claim 1 , wherein the step of contacting the substrate having the catalyzed metal surface with the silicon reactant is greater than 95% selective to the catalyzed metal surface as compared to the passivated dielectric surface.

7 . The method of claim 1 , wherein the silicon reactant comprises tris(tert-butoxy) silanol (TBS), tris(isopropoxy) silanol (TIS), or tris(tert-pentoxy) silanol (TPS).

8 . The method of claim 1 , wherein the silicon reactant comprises a silanol.

9 . The method of claim 1 , further comprising: after the substrate is contacted with the silicon reactant, cleaning the substrate.

10 . The method of claim 9 , wherein the cleaning includes treating the substrate with an H 2 plasma treatment.

11 . The method of claim 1 , wherein the step of contacting the substrate with the passivating agent is greater than 75% selective to the dielectric surface as compared to the metal surface.

12 . The method of claim 11 , wherein the step of contacting the substrate with the metal catalyst is greater than 75% selective to the metal surface as compared to the passivated dielectric surface.

13 . The method of claim 12 , wherein the step of contacting the substrate having the catalyzed metal surface with the silicon reactant is greater than 75% selective to the catalyzed metal surface as compared to the passivated dielectric surface.

14 . A method of selectively depositing silicon oxide on a metal surface of a substrate relative to a dielectric surface of the substrate comprising a deposition super-cycle comprising:

contacting the substrate with a silylating agent to selectively passivate the dielectric surface relative to the metal surface of the substrate, and

conducting one or more silicon oxide deposition sub-cycles comprising alternately and sequentially: (i) contacting the substrate with a metal catalyst to selectively deposit the metal catalyst on the metal surface of the substrate relative to the dielectric surface of the substrate to thereby form a catalyzed metal surface, wherein the metal catalyst comprises dimethylaluminum isopropoxide (DMAI), and (ii) contacting the catalyzed metal surface with a silicon reactant to selectively deposit silicon oxide on the catalyzed metal surface relative to the dielectric surface.

15 . The method of claim 14 , wherein the step of contacting the substrate with the silylating agent to selectively passivate the dielectric surface relative to the metal surface of the substrate is at least 80% selective to the dielectric surface as compared to the metal surface.

16 . The method of claim 14 , wherein the silicon reactant comprises a silanol.

17 . The method of claim 14 , wherein the silicon reactant comprises tris(tert-butoxy) silanol (TBS), tris(isopropoxy) silanol (TIS), or tris(tert-pentoxy) silanol (TPS).

18 . The method of claim 14 , further comprising: after a final silicon oxide deposition sub-cycle, cleaning the substrate to remove passivating material from the dielectric surface.

19 . The method of claim 18 , wherein the cleaning includes treating the substrate with an H 2 plasma treatment.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2024
From: ILLIBERI, ANDREA; VERNI, GIUSEPPE ALESSIO; DENG, SHAOREN; CHIAPPE, DANIELE; TOIS, EVA; TUOMINEN, MARKO; GIVENS, MICHAEL
To: ASM IP HOLDING B.V.
Reel/Frame 066558/0813 →
Continuity (3)
Continuation 17216249 · Mar 29, 2021
Provisional Application 63002135 · Mar 30, 2020
Related Publication 20240076775A1 · Mar 7, 2024
References Cited (400)
US 4804640A · Kaganowicz · 1989 [cited by applicant]
US 4863879A · Kwok · 1989 [cited by applicant]
US 4948755A · Mo · 1990 [cited by applicant]
US 5288697A · Schrepp et al. · 1994 [cited by applicant]
US 5447887A · Filipiak et al. · 1995 [cited by applicant]
US 5604153A · Tsubouchi et al. · 1997 [cited by applicant]
US 5633036A · Seebauer et al. · 1997 [cited by applicant]
US 5869135A · Vaeth et al. · 1999 [cited by applicant]
US 5925494A · Horn · 1999 [cited by applicant]
US 6046108A · Liu et al. · 2000 [cited by applicant]
US 6416577B1 · Suntoloa et al. · 2002 [cited by applicant]
US 6426015B1 · Xia et al. · 2002 [cited by applicant]
US 6455414B1 · Hillman et al. · 2002 [cited by applicant]
US 6482740B2 · Soininen et al. · 2002 [cited by applicant]
US 6586330B1 · Ludviksson et al. · 2003 [cited by applicant]
US 6679951B2 · Soininen et al. · 2004 [cited by applicant]
US 6759325B2 · Raaijmakers et al. · 2004 [cited by applicant]
US 6811448B1 · Paton · 2004 [cited by applicant]
US 6844258B1 · Fair et al. · 2005 [cited by applicant]
US 6852635B2 · Satta et al. · 2005 [cited by applicant]
US 6858533B2 · Chu et al. · 2005 [cited by applicant]
US 6878628B2 · Sophie et al. · 2005 [cited by applicant]
US 6887795B2 · Soininen et al. · 2005 [cited by applicant]
US 6921712B2 · Soininen et al. · 2005 [cited by applicant]
US 6958174B1 · Klaus et al. · 2005 [cited by applicant]
US 7041609B2 · Vaartstra · 2006 [cited by applicant]
US 7067407B2 · Kostamo et al. · 2006 [cited by applicant]
US 7084060B1 · Furukawa et al. · 2006 [cited by applicant]
US 7118779B2 · Verghese et al. · 2006 [cited by applicant]
US 7220669B2 · Hujanen et al. · 2007 [cited by applicant]
US 7241677B2 · Soininen et al. · 2007 [cited by applicant]
US 7323411B1 · Blosse · 2008 [cited by applicant]
US 7405143B2 · Leinikka et al. · 2008 [cited by applicant]
US 7425350B2 · Todd · 2008 [cited by applicant]
US 7476618B2 · Kilpela et al. · 2009 [cited by applicant]
US 7494927B2 · Kostamo et al. · 2009 [cited by applicant]
US 7595271B2 · White · 2009 [cited by applicant]
US 7611751B2 · Elers · 2009 [cited by applicant]
US 7695567B2 · Fu · 2010 [cited by applicant]
US 7754621B2 · Putkonen · 2010 [cited by applicant]
US 7790631B2 · Sharma et al. · 2010 [cited by applicant]
US 7799135B2 · Verghese et al. · 2010 [cited by applicant]
US 7910177B2 · Li · 2011 [cited by applicant]
US 7914847B2 · Verghese et al. · 2011 [cited by applicant]
US 7927942B2 · Raaijmakers · 2011 [cited by applicant]
US 7951637B2 · Weidman et al. · 2011 [cited by applicant]
US 7955979B2 · Kostamo et al. · 2011 [cited by applicant]
US 7964505B2 · Khandelwal et al. · 2011 [cited by applicant]
US 8173554B2 · Lee et al. · 2012 [cited by applicant]
US 8293597B2 · Raaijmakers · 2012 [cited by applicant]
US 8293658B2 · Shero et al. · 2012 [cited by applicant]
US 8425739B1 · Wieting · 2013 [cited by applicant]
US 8466052B2 · Baek et al. · 2013 [cited by applicant]
US 8536058B2 · Kostamo et al. · 2013 [cited by applicant]
US 8623468B2 · Lin et al. · 2014 [cited by applicant]
US 8778815B2 · Yamaguchi et al. · 2014 [cited by applicant]
US 8890264B2 · Dewey et al. · 2014 [cited by applicant]
US 8956971B2 · Haukka et al. · 2015 [cited by applicant]
US 8962482B2 · Albertson et al. · 2015 [cited by applicant]
US 8980418B2 · Darling et al. · 2015 [cited by applicant]
US 8993404B2 · Korbrinsky et al. · 2015 [cited by applicant]
US 9067958B2 · Romero · 2015 [cited by applicant]
US 9112003B2 · Haukka et al. · 2015 [cited by applicant]
US 9129897B2 · Pore et al. · 2015 [cited by applicant]
US 9136110B2 · Rathsack · 2015 [cited by applicant]
US 9159558B2 · Cheng et al. · 2015 [cited by applicant]
US 9236292B2 · Romero et al. · 2016 [cited by applicant]
US 9257303B2 · Haukka et al. · 2016 [cited by applicant]
US 9312131B2 · Bauer et al. · 2016 [cited by applicant]
US 9349687B1 · Gates et al. · 2016 [cited by applicant]
US 9353139B2 · Sundermeyer et al. · 2016 [cited by applicant]
US 9455138B1 · Fukazawa et al. · 2016 [cited by applicant]
US 9490145B2 · Niskanen et al. · 2016 [cited by applicant]
US 9502289B2 · Haukka et al. · 2016 [cited by applicant]
US 9552979B2 · Knaepen et al. · 2017 [cited by applicant]
US 9679808B2 · Haukka et al. · 2017 [cited by applicant]
US 9786491B2 · Suzuki et al. · 2017 [cited by applicant]
US 9786492B2 · Suzuki et al. · 2017 [cited by applicant]
US 9803277B1 · Longrie et al. · 2017 [cited by applicant]
US 9805974B1 · Chen et al. · 2017 [cited by applicant]
US 9816180B2 · Haukka et al. · 2017 [cited by applicant]
US 9895715B2 · Haukka et al. · 2018 [cited by applicant]
US 9911595B1 · Smith et al. · 2018 [cited by applicant]
US 10014212B2 · Chen et al. · 2018 [cited by applicant]
US 10041166B2 · Longrie et al. · 2018 [cited by applicant]
US 10047435B2 · Haukka et al. · 2018 [cited by applicant]
US 10049924B2 · Haukka et al. · 2018 [cited by applicant]
US 10115603B2 · Niskanen et al. · 2018 [cited by applicant]
US 10157786B2 · Haukka et al. · 2018 [cited by applicant]
US 10186420B2 · Fukazawa · 2019 [cited by applicant]
US 10204782B2 · Maes et al. · 2019 [cited by applicant]
US 10343186B2 · Pore et al. · 2019 [cited by applicant]
US 10373820B2 · Tois et al. · 2019 [cited by applicant]
US 10428421B2 · Haukka et al. · 2019 [cited by applicant]
US 10443123B2 · Haukka et al. · 2019 [cited by applicant]
US 10453701B2 · Tois et al. · 2019 [cited by applicant]
US 10480064B2 · Longrie et al. · 2019 [cited by applicant]
US 10546741B2 · Muramaki et al. · 2020 [cited by applicant]
US 10695794B2 · Pore et al. · 2020 [cited by applicant]
US 10847363B2 · Tapily · 2020 [cited by applicant]
US 10900120B2 · Sharma et al. · 2021 [cited by applicant]
US 11643720B2 · Illiberi · 2023 [cited by examiner]
US 20010019803A1 · Mirkanimi · 2001 [cited by applicant]
US 20010021414A1 · Morishima et al. · 2001 [cited by applicant]
US 20010025205A1 · Chern et al. · 2001 [cited by applicant]
US 20020027261A1 · Blesser et al. · 2002 [cited by applicant]
US 20020047144A1 · Nguyen et al. · 2002 [cited by applicant]
US 20020068458A1 · Chiang et al. · 2002 [cited by applicant]
US 20020090777A1 · Forbes et al. · 2002 [cited by applicant]
US 20020107316A1 · Bice et al. · 2002 [cited by applicant]
US 20030027431A1 · Sneh et al. · 2003 [cited by applicant]
US 20030066487A1 · Suzuki · 2003 [cited by applicant]
US 20030143839A1 · Raaijmakers et al. · 2003 [cited by applicant]
US 20030176559A1 · Bice et al. · 2003 [cited by applicant]
US 20030181035A1 · Yoon et al. · 2003 [cited by applicant]
US 20030185997A1 · Hsieh · 2003 [cited by applicant]
US 20030192090P1 · Meilland · 2003 [cited by applicant]
US 20030193090A1 · Otani et al. · 2003 [cited by applicant]
US 20040092073A1 · Cabral · 2004 [cited by applicant]
US 20040129558A1 · Liu et al. · 2004 [cited by applicant]
US 20040219746A1 · Vaartstra et al. · 2004 [cited by applicant]
US 20040266185A1 · Doke et al. · 2004 [cited by applicant]
US 20050012975A1 · George et al. · 2005 [cited by applicant]
US 20050112282A1 · Gordon · 2005 [cited by examiner]
US 20050136604A1 · Al-Bayati et al. · 2005 [cited by applicant]
US 20050160575A1 · Gambino et al. · 2005 [cited by applicant]
US 20050223989A1 · Lee et al. · 2005 [cited by applicant]
US 20060019493A1 · Li · 2006 [cited by applicant]
US 20060047132A1 · Shenai-Khatkhate et al. · 2006 [cited by applicant]
US 20060121271A1 · Frey et al. · 2006 [cited by applicant]
US 20060121677A1 · Parekh et al. · 2006 [cited by applicant]
US 20060121733A1 · Kilpela et al. · 2006 [cited by applicant]
US 20060128150A1 · Gandikota et al. · 2006 [cited by applicant]
US 20060141155A1 · Gordon et al. · 2006 [cited by applicant]
US 20060156979A1 · Thakur et al. · 2006 [cited by applicant]
US 20060176559A1 · Takatoshi et al. · 2006 [cited by applicant]
US 20060199399A1 · Muscat · 2006 [cited by applicant]
US 20060226409A1 · Burr et al. · 2006 [cited by applicant]
US 20060292845A1 · Chiang et al. · 2006 [cited by applicant]
US 20070014919A1 · Hamalainen et al. · 2007 [cited by applicant]
US 20070026654A1 · Huotari et al. · 2007 [cited by applicant]
US 20070036892A1 · Haukka et al. · 2007 [cited by applicant]
US 20070063317A1 · Kim et al. · 2007 [cited by applicant]
US 20070098894A1 · Verghese et al. · 2007 [cited by applicant]
US 20070099422A1 · Wijekoon et al. · 2007 [cited by applicant]
US 20070232082A1 · Balseanu et al. · 2007 [cited by applicant]
US 20070241390A1 · Tanaka et al. · 2007 [cited by applicant]
US 20070251444A1 · Gros-Jean et al. · 2007 [cited by applicant]
US 20070292604A1 · Dordi et al. · 2007 [cited by applicant]
US 20080032064A1 · Gordon · 2008 [cited by examiner]
US 20080066680A1 · Sherman · 2008 [cited by applicant]
US 20080072819A1 · Rahtu · 2008 [cited by applicant]
US 20080124932A1 · Tateishi et al. · 2008 [cited by applicant]
US 20080179741A1 · Streck et al. · 2008 [cited by applicant]
US 20080241575A1 · Lavoie et al. · 2008 [cited by applicant]
US 20080282970A1 · Heys et al. · 2008 [cited by applicant]
US 20090035949A1 · Niinisto et al. · 2009 [cited by applicant]
US 20090071505A1 · Miya et al. · 2009 [cited by applicant]
US 20090081385A1 · Heys et al. · 2009 [cited by applicant]
US 20090203222A1 · Dussarrat et al. · 2009 [cited by applicant]
US 20090269507A1 · Yu et al. · 2009 [cited by applicant]
US 20090274887A1 · Millward et al. · 2009 [cited by applicant]
US 20090275163A1 · Lacey et al. · 2009 [cited by applicant]
US 20090311879A1 · Blasco et al. · 2009 [cited by applicant]
US 20100015756A1 · Weidman et al. · 2010 [cited by applicant]
US 20100102417A1 · Ganguli et al. · 2010 [cited by applicant]
US 20100147396A1 · Yamagishi et al. · 2010 [cited by applicant]
US 20100178468A1 · Jiang et al. · 2010 [cited by applicant]
US 20100248473A1 · Ishizaka et al. · 2010 [cited by applicant]
US 20100270626A1 · Raisanen · 2010 [cited by applicant]
US 20100297474A1 · Dameron · 2010 [cited by applicant]
US 20100314765A1 · Liang et al. · 2010 [cited by applicant]
US 20110039420A1 · Nakao · 2011 [cited by applicant]
US 20110053800A1 · Jung et al. · 2011 [cited by applicant]
US 20110120542A1 · Levy · 2011 [cited by applicant]
US 20110124192A1 · Ganguli et al. · 2011 [cited by applicant]
US 20110146568A1 · Haukka et al. · 2011 [cited by applicant]
US 20110146703A1 · Chen et al. · 2011 [cited by applicant]
US 20110198756A1 · Thenappan et al. · 2011 [cited by applicant]
US 20110221061A1 · Prakash et al. · 2011 [cited by applicant]
US 20110244680A1 · Tahnoe et al. · 2011 [cited by applicant]
US 20110311726A1 · Liu et al. · 2011 [cited by applicant]
US 20120032311A1 · Gates · 2012 [cited by applicant]
US 20120046421A1 · Darling et al. · 2012 [cited by applicant]
US 20120052681A1 · Marsh · 2012 [cited by applicant]
US 20120088369A1 · Weidman et al. · 2012 [cited by applicant]
US 20120091541A1 · Suchomel et al. · 2012 [cited by applicant]
US 20120189868A1 · Borovik et al. · 2012 [cited by applicant]
US 20120219824A1 · Prolier et al. · 2012 [cited by applicant]
US 20120241411A1 · Darling et al. · 2012 [cited by applicant]
US 20120264291A1 · Ganguli et al. · 2012 [cited by applicant]
US 20120269970A1 · Ido et al. · 2012 [cited by applicant]
US 20130005133A1 · Lee et al. · 2013 [cited by applicant]
US 20130078793A1 · Sun et al. · 2013 [cited by applicant]
US 20130084700A1 · Swerts et al. · 2013 [cited by applicant]
US 20130089983A1 · Sugita et al. · 2013 [cited by applicant]
US 20130095664A1 · Matero et al. · 2013 [cited by applicant]
US 20130115763A1 · Takamure et al. · 2013 [cited by applicant]
US 20130115768A1 · Pore et al. · 2013 [cited by applicant]
US 20130126815A1 · Kim et al. · 2013 [cited by applicant]
US 20130143401A1 · Yu et al. · 2013 [cited by applicant]
US 20130146881A1 · Yamazaki et al. · 2013 [cited by applicant]
US 20130157409A1 · Vaidya et al. · 2013 [cited by applicant]
US 20130189790A1 · Li et al. · 2013 [cited by applicant]
US 20130189837A1 · Haukka et al. · 2013 [cited by applicant]
US 20130196502A1 · Haukka et al. · 2013 [cited by applicant]
US 20130203267A1 · Pomarede et al. · 2013 [cited by applicant]
US 20130280919A1 · Yuasa et al. · 2013 [cited by applicant]
US 20130284094A1 · Pavol et al. · 2013 [cited by applicant]
US 20130309457A1 · Rathsack et al. · 2013 [cited by applicant]
US 20130316080A1 · Yamaguchi et al. · 2013 [cited by applicant]
US 20130319290A1 · Xiao et al. · 2013 [cited by applicant]
US 20130323930A1 · Chattopadhyay et al. · 2013 [cited by applicant]
US 20130330936A1 · Lachaud et al. · 2013 [cited by applicant]
US 20140001572A1 · Bohr et al. · 2014 [cited by applicant]
US 20140024200A1 · Kato et al. · 2014 [cited by applicant]
US 20140091308A1 · Dasgupta et al. · 2014 [cited by applicant]
US 20140120738A1 · Jung et al. · 2014 [cited by applicant]
US 20140152383A1 · Nikonov et al. · 2014 [cited by applicant]
US 20140190409A1 · Matsumoto et al. · 2014 [cited by applicant]
US 20140193598A1 · Traser et al. · 2014 [cited by applicant]
US 20140205766A1 · Lyon et al. · 2014 [cited by applicant]
US 20140209022A1 · Inoue et al. · 2014 [cited by applicant]
US 20140227461A1 · Darwish et al. · 2014 [cited by applicant]
US 20140252487A1 · Stephens et al. · 2014 [cited by applicant]
US 20140272194A1 · Xiao et al. · 2014 [cited by applicant]
US 20140273290A1 · Somervell · 2014 [cited by applicant]
US 20140273477A1 · Niskanen et al. · 2014 [cited by applicant]
US 20140273514A1 · Somervell et al. · 2014 [cited by applicant]
US 20140273523A1 · Rathsack · 2014 [cited by applicant]
US 20140273527A1 · Niskanen et al. · 2014 [cited by applicant]
US 20150004317A1 · Dussarrat et al. · 2015 [cited by applicant]
US 20150004319A1 · Mizue · 2015 [cited by applicant]
US 20150004806A1 · Ndiege et al. · 2015 [cited by applicant]
US 20150011032A1 · Kunimatsu et al. · 2015 [cited by applicant]
US 20150011093A1 · Singh et al. · 2015 [cited by applicant]
US 20150037972A1 · Danek et al. · 2015 [cited by applicant]
US 20150064931A1 · Kumagi et al. · 2015 [cited by applicant]
US 20150083415A1 · Monroe et al. · 2015 [cited by applicant]
US 20150087158A1 · Sugita et al. · 2015 [cited by applicant]
US 20150093890A1 · Blackwell et al. · 2015 [cited by applicant]
US 20150097292A1 · He et al. · 2015 [cited by applicant]
US 20150118863A1 · Rathod et al. · 2015 [cited by applicant]
US 20150162214A1 · Thompson et al. · 2015 [cited by applicant]
US 20150170961A1 · Romero et al. · 2015 [cited by applicant]
US 20150179798A1 · Clendenning et al. · 2015 [cited by applicant]
US 20150217330A1 · Haukka et al. · 2015 [cited by applicant]
US 20150240121A1 · Sugita et al. · 2015 [cited by applicant]
US 20150275355A1 · Mallikarjunan et al. · 2015 [cited by applicant]
US 20150299848A1 · Haukka et al. · 2015 [cited by applicant]
US 20150371866A1 · Chen et al. · 2015 [cited by applicant]
US 20150372205A1 · Kimura et al. · 2015 [cited by applicant]
US 20150376211A1 · Girard et al. · 2015 [cited by applicant]
US 20160005731A1 · Chen · 2016 [cited by applicant]
US 20160075884A1 · Chen · 2016 [cited by applicant]
US 20160079524A1 · Do et al. · 2016 [cited by applicant]
US 20160086850A1 · Romero et al. · 2016 [cited by applicant]
US 20160152640A1 · Kuchenbeiser et al. · 2016 [cited by applicant]
US 20160172189A1 · Tapily · 2016 [cited by applicant]
US 20160186004A1 · Hustad et al. · 2016 [cited by applicant]
US 20160190060A1 · Bristol et al. · 2016 [cited by applicant]
US 20160222504A1 · Haukka et al. · 2016 [cited by applicant]
US 20160233084A1 · Chen et al. · 2016 [cited by applicant]
US 20160247695A1 · Niskanen et al. · 2016 [cited by applicant]
US 20160276208A1 · Haukka et al. · 2016 [cited by applicant]
US 20160284568A1 · Morris et al. · 2016 [cited by applicant]
US 20160293384A1 · Yan et al. · 2016 [cited by applicant]
US 20160293398A1 · Danek et al. · 2016 [cited by applicant]
US 20160315191A1 · Tsai et al. · 2016 [cited by applicant]
US 20160346838A1 · Fujita et al. · 2016 [cited by applicant]
US 20160365280A1 · Brink et al. · 2016 [cited by applicant]
US 20170037513A1 · Haukka et al. · 2017 [cited by applicant]
US 20170040164A1 · Wang et al. · 2017 [cited by applicant]
US 20170051405A1 · Fukazawa et al. · 2017 [cited by applicant]
US 20170058401A1 · Blackwell et al. · 2017 [cited by applicant]
US 20170069527A1 · Haukka et al. · 2017 [cited by applicant]
US 20170100742A1 · Pore et al. · 2017 [cited by applicant]
US 20170100743A1 · Pore et al. · 2017 [cited by applicant]
US 20170107413A1 · Wang et al. · 2017 [cited by applicant]
US 20170154806A1 · Wang et al. · 2017 [cited by applicant]
US 20170298503A1 · Maes et al. · 2017 [cited by applicant]
US 20170301542A1 · Maes et al. · 2017 [cited by applicant]
US 20170323776A1 · Färm et al. · 2017 [cited by applicant]
US 20170332179A1 · Bright et al. · 2017 [cited by applicant]
US 20170352533A1 · Tois et al. · 2017 [cited by applicant]
US 20170352550A1 · Tois et al. · 2017 [cited by applicant]
US 20170358482A1 · Chen et al. · 2017 [cited by applicant]
US 20180010247A1 · Niskanen et al. · 2018 [cited by applicant]
US 20180040708A1 · Narayanan et al. · 2018 [cited by applicant]
US 20180073136A1 · Haukka et al. · 2018 [cited by applicant]
US 20180080121A1 · Longrie et al. · 2018 [cited by applicant]
US 20180096888A1 · Naik et al. · 2018 [cited by applicant]
US 20180142348A1 · Yu et al. · 2018 [cited by applicant]
US 20180151345A1 · Haukka et al. · 2018 [cited by applicant]
US 20180151355A1 · Fukazawa · 2018 [cited by applicant]
US 20180182618A1 · Blanquart et al. · 2018 [cited by applicant]
US 20180211833A1 · Li · 2018 [cited by examiner]
US 20180222933A1 · Romero · 2018 [cited by applicant]
US 20180233350A1 · Tois et al. · 2018 [cited by applicant]
US 20180243787A1 · Haukka et al. · 2018 [cited by applicant]
US 20180350587A1 · Jia et al. · 2018 [cited by applicant]
US 20190017170A1 · Sharma et al. · 2019 [cited by applicant]
US 20190057858A1 · Hausmann et al. · 2019 [cited by applicant]
US 20190074441A1 · Kikuchi et al. · 2019 [cited by applicant]
US 20190100837A1 · Haukka et al. · 2019 [cited by applicant]
US 20190155159A1 · Knaepen et al. · 2019 [cited by applicant]
US 20190283077A1 · Pore et al. · 2019 [cited by applicant]
US 20190333761A1 · Tois et al. · 2019 [cited by applicant]
US 20190341245A1 · Tois et al. · 2019 [cited by applicant]
US 20200051829A1 · Tois et al. · 2020 [cited by applicant]
US 20200090924A1 · Wu et al. · 2020 [cited by applicant]
US 20200105515A1 · Maes et al. · 2020 [cited by applicant]
US 20200122191A1 · Haukka et al. · 2020 [cited by applicant]
US 20200325573A1 · Illiberi et al. · 2020 [cited by applicant]
US 20200395211A1 · Jia et al. · 2020 [cited by applicant]
CN 1650044A · 2005 [cited by applicant]
CN 107210196A · 2017 [cited by applicant]
CN 111816547 · 2020 [cited by applicant]
EP 0469456 · 1992 [cited by applicant]
EP 0880168 · 1998 [cited by applicant]
EP 1340269 · 2009 [cited by applicant]
EP 3026055 · 2016 [cited by applicant]
JP 2001127068 · 2001 [cited by applicant]
JP 2008311603 · 2008 [cited by applicant]
JP 2011018742 · 2011 [cited by applicant]
JP 2011187583 · 2011 [cited by applicant]
JP 2014093331 · 2014 [cited by applicant]
KR 102001001072 · 2001 [cited by applicant]
KR 1020020010821 · 2002 [cited by applicant]
KR 20030027392 · 2003 [cited by applicant]
KR 1020040056026 · 2004 [cited by applicant]
KR 1020050103811 · 2005 [cited by applicant]
KR 100920033 · 2009 [cited by applicant]
KR 1020100093859 · 2010 [cited by applicant]
KR 1020150092022A · 2015 [cited by applicant]
KR 1020200120872 · 2020 [cited by applicant]
KR 102197048 · 2020 [cited by applicant]
TW 200539321 · 2005 [cited by applicant]
TW 201005827 · 2010 [cited by applicant]
TW 201027766 · 2010 [cited by applicant]
TW 201439365 · 2014 [cited by applicant]
TW 201543570A · 2015 [cited by applicant]
TW 201836023A · 2018 [cited by applicant]
TW I652734 · 2019 [cited by applicant]
WO WO2002045167 · 2002 [cited by applicant]
WO WO2011156705 · 2011 [cited by applicant]
WO WO2013161772 · 2013 [cited by applicant]
WO WO2014156782 · 2014 [cited by applicant]
WO WO2014209390 · 2014 [cited by applicant]
WO WO2015047345 · 2015 [cited by applicant]
WO WO2015094305 · 2015 [cited by applicant]
WO WO2015147843 · 2015 [cited by applicant]
WO WO2015147858 · 2015 [cited by applicant]
WO WO2016178978 · 2016 [cited by applicant]
WO WO2017184357 · 2017 [cited by applicant]
WO WO2017184358 · 2017 [cited by applicant]
WO WO2018204709 · 2018 [cited by applicant]
WO WO2018213018 · 2018 [cited by applicant]
Aaltonen et al., “Atomic Layer Deposition of Iridium Thin Films”, Journal of The Electrochemical Society, 151 (8) G489-G492 (2004). [cited by applicant]
Atanasov et al., “Inherent substrate-dependent growth initation and selective-area atomic layer deposition of TiO2 using “water-free” metal-halide/metal alkoxide reactants”, J. Vac. Sci. Technol. A 34(1), Jan./Feb. 2016… [cited by applicant]
Au et al., “Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections in Microelectronics”, Journal of the Electrochemical Society, vol. 157, No. 6, 2010, pp. D341-D345. [cited by applicant]
Benzotriazole, Wikipedia via https://en.wikipedia.org/wiki/Benzotriazole; pp. 1-5, no date available. [cited by applicant]
Bernal-Ramos, et al., “Atomic Layer Deposition of Cobalt Silicide Thin Films Studied by in Situ Infrared Spectroscopy”, Chem. Mater. 2015, 27, pp. 4943-4949. [cited by applicant]
Bouteville et al., “Selective R.T.L.P.C.V.D. of Tungsten by Silane Reduction on Patterned PPQ/Si Wafers” Journal De Physique IV, Colloque C2, suppl. au Journal de Physique II, vol. 1, Sep. 1991, pp. C2-857-C2-864. [cited by applicant]
Burton et al., “Atomic Layer Deposition of MgO Using Bis(ethylcyclopentadienyl)magnesium and H2O”. J. Phys. Chem. C, 2009, 113, 1939-1946. [cited by applicant]
Burton et al., “Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol”, Chem. Mater. 2008, 20, pp. 7031-7043. [cited by applicant]
Burton et al. “SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy”. J. Phys. Chem. C, 2009, 113, 8249-8257. [cited by applicant]
Cai et al., “Selective Passivation of Pt Nanoparticles with Enhanced Sintering Resistance and Activity toward CO Oxidation via Atomic Layer Deposition”, ACS Appl. Nano Mater. 2018, 1, 2, pp. 522-530. [cited by applicant]
Carlsson, J., “Precursor Design for Chemical Vapour Deposition”, Acta Chemica Scandinavica, vol. 45, 1991, pp. 864-869. [cited by applicant]
Chang et al, “Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor”, J. Appl. Phys., vol. 80, No. 5, Sep. 1, 1996, pp. 305… [cited by applicant]
Chen et al., “Highly Stable Monolayer Resists for Atomic Layer Deposition on Germanium and Silicon”, Chem. Matter, vol. 18, No. 16, pp. 3733-3741, 2006. [cited by applicant]
Cho et al., “Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water”, Journal of Vacuum Science & Technology A 21, (2003), doi: 10.1116/1.1562184, pp. 1366-1370. [cited by applicant]
Choi et al., “Rapid vapor deposition SiO2 thin film deposited at a low temperature using tris(tert-pentoxy)silanol and trimethyl-aluminum”, Materials Chemistry and Physics, 142 (2013), pp. 614-618. [cited by applicant]
Coclite, et al.; 25th Anniversary Article: CVD Polymers: A New Paradigm for Surface Modification and Device Fabrication; Advanced Materials; Oct. 2013; 25; pp. 5392-5423. [cited by applicant]
Elam et al., “Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition”, Surface Science, vol. 479, 2001, pp. 121-135. [cited by applicant]
Elam et al., “Nucleation and growth during tungsten atomic layer deposition on SiO2 surfaces”, Thin Solid Films, vol. 386, 2001 pp. 41-52. [cited by applicant]
Ellinger et al., “Selective Area Spatial Atomic Layer Deposition of ZnO, Al2O3, and Aluminum-Doped ZnO Using Poly(vinyl pyrrolidone)”, Chem. Mater. 2014, 26, pp. 1514-1522. [cited by applicant]
Fabreguette et al., Quartz crystal microbalance study of tungsten atomic layer deposition using WF6 and Si2H6, Thin Solid Films, vol. 488, 2005, pp. 103-110. [cited by applicant]
Farm et al., “Self-Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective-Area Atomic Layer Deposition of Iridium”, Chem. Vap. Deposition, 2006, 12, pp. 415-417. [cited by applicant]
Farm et al. “Selective-Area Atomic Layer Deposition Using Poly( methyl methacrylate) Films as Mask Layers”, J. Phys. Chem. C, 2008, 112, pp. 15791-15795. (Year: 2008). [cited by applicant]
Farr, “Synthesis and Characterization of Novel Polyimide Gas Separation Membrane Material Systems”, Chapter 2; Virginia Tech Chemistry PhD Dissertation; URN# etd-080999-123034; Jul. 26, 1999. [cited by applicant]
File History of U.S. Appl. No. 13/702,992, filed Mar. 26, 2013. [cited by applicant]
File History of U.S. Appl. No. 14/613,183, filed Feb. 3, 2015. [cited by applicant]
File History of U.S. Appl. No. 14/988,374, filed Jan. 5, 2016. [cited by applicant]
File History of U.S. Appl. No. 15/609,497, filed May 31, 2017. [cited by applicant]
File History of U.S. Appl. No. 16/100,581, filed Aug. 10, 2018. [cited by applicant]
File History of U.S. Appl. No. 13/708,863, filed Dec. 7, 2012. [cited by applicant]
File History of U.S. Appl. No. 14/737,293, filed Jun. 11, 2015. [cited by applicant]
File History of U.S. Appl. No. 15/356,306, filed Nov. 18, 2016. [cited by applicant]
File History of U.S. Appl. No. 16/213,479, filed Dec. 7, 2018. [cited by applicant]
File History of U.S. Appl. No. 14/612,784, filed Feb. 3, 2015. [cited by applicant]
File History of U.S. Appl. No. 15/877,632, filed Jan. 23, 2018. [cited by applicant]
File History of U.S. Appl. No. 16/657,307, filed Oct. 18, 2019. [cited by applicant]
File History of U.S. Appl. No. 14/687,833, filed Apr. 15, 2015. [cited by applicant]
File History of U.S. Appl. No. 16/100,855, filed Aug. 10, 2018. [cited by applicant]
File History of U.S. Appl. No. 16/594,365, filed Oct. 7, 2019. [cited by applicant]
File History of U.S. Appl. No. 14/628,799, filed Feb. 23, 2015. [cited by applicant]
File History of U.S. Appl. No. 15/331,366, filed Oct. 21, 2016. [cited by applicant]
File History of U.S. Appl. No. 16/143,888, filed Sep. 27, 2018. [cited by applicant]
File History of U.S. Appl. No. 16/987,990, filed Aug. 7, 2020. [cited by applicant]