IP Library › Granted Patent US 12,473,631
Granted Patent B2
US 12,473,631 · App. 18/170,286 · Granted Nov 18, 2025

Simultaneous selective deposition of two different materials on two different surfaces

Inventors: Michael Eugene Givens (Oud-Heverlee, BE); Eva Tois (Helsinki, FI); Suvi Haukka (Helsinki, FI); Daria Nevstrueva (Helsinki, FI); Charles Dezelah (Helsinki, FI)
Assignee: ASM IP Holding B.V.
C23C16/04C23C16/0281C23C16/20C23C16/45534C23C16/56C23C28/341
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Quick Facts
Patent No.
US 12,473,631
App. No.
18/170,286
Granted
Nov 18, 2025
Kind
B2
Abstract

In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

Claims (27)

1 . A method of selectively depositing different materials on a first surface and a second different surface of a substrate, the method comprising one or more first deposition cycles comprising:

exposing the first and the second surfaces of the substrate to a passivation agent such that a passivation layer is selectively formed on the first surface relative to the second surface;

exposing the first surface, having the formed passivation layer, and the second surfaces of the substrate to a first reactant such that a first element from the first reactant is selectively deposited on the second surface relative to the first surface; and

exposing the first surface, having the passivation layer, and the second surface, having the deposited first element, s of the substrate to a second reactant, wherein, such that a first material selectively forms on the first surface simultaneously with a second material selectively forming on the second surface, is selectively formed on the first surface and a second different material is selectively formed on the second surface simultaneously in the one or more first deposition cycles, and wherein one or more of an etch rate, a density, a conductivity, and a refractive index of the first material differs from that of the second material by at least about 5%.

2 . The method of claim 1 , wherein the etch rate of the first material differs from the etch rate of the second material by at least about 25%.

3 . The method of claim 1 , wherein the etch rate of the first material is at least about 1.5 times of the etch rate of the second material.

4 . The method of claim 1 , wherein the density of the first material differs from the density of the second material by at least about 5%.

5 . The method of claim 1 , wherein the conductivity of the first material is at least about 10 times greater than the conductivity of the second material.

6 . The method of claim 1 , wherein the refractive index of the first material differs from the refractive index of the second material by at least about 5%.

7 . The method of claim 1 , wherein the first surface comprises a metal and the second surface comprises a dielectric material.

8 . The method of claim 7 , wherein the metal comprises Co, Cu, W, Ru and/or Ni.

9 . The method of claim 7 , wherein the dielectric material comprises silicon dioxide (SiO 2 ), silicon nitride (SiN), and/or silicon oxide carbide (SiOC).

10 . The method of claim 1 , further comprising contacting the first and second surfaces with an additional reactant comprising an oxygen reactant, a nitrogen reactant or a carbon reactant.

11 . The method of claim 1 , wherein the passivation agent comprises a di-imine or a beta-diketonate.

12 . The method of claim 1 , wherein the first reactant comprises hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), diethylaminosilane and/or hexakis (ethylamino)disilane.

13 . The method of claim 1 , wherein the second reactant comprises aluminum, zirconium, hafnium, titanium, lanthanum, and/or erbium.

14 . The method of claim 1 , further comprising one or more second deposition cycles comprising alternately and sequentially contacting the substrate with the passivation agent and the first reactant.

15 . The method of claim 1 , wherein the second reactant penetrates the passivation layer on the first surface such that the second reactant reacts with the first and second surfaces surface to form the first material on the first surface and reacts with the second surface, having the deposited first element, to form the second material on the second surface.

16 . A method of depositing different materials on a first surface and a different second different surface of a substrate, the method comprising one or more first deposition cycles comprising:

exposing the first and the second surfaces of the substrate to a passivation agent such that a passivation layer is selectively formed on the first surface relative to the second surface, wherein the passivation layer prevents a first metal or semimetal from forming on the first surface;

exposing the first and the second surfaces of the substrate to a first reactant a first metal or semimetal reactant such that the first metal or semimetal from the first reactant is selectively deposited on the second surface relative to the first surface; and

exposing the first surface and the second surface, having the deposited first metal or semimetal, of the substrate to a second metal or semimetal to a second reactant including a second metal or semimetal reactant, wherein such that a first material selectively forms on the first surface simultaneously with a second different material selectively forming on the second surface, simultaneously in the one or more first deposition cycles, and wherein the first material differs from the second material with respect to one or more of an etch rate, a density, a conductivity, and a refractive index.

17 . The method of claim 16 , wherein the etch rate of the first material is at least about 1.5 times of the etch rate of the second material.

18 . The method of claim 16 , wherein the density of the first material differs from the density of the second material by at least about 5%.

19 . The method of claim 16 , wherein the first surface comprises a metal and the second surface comprises a dielectric material.

20 . The method of claim 16 , wherein the first metal or semimetal reactant comprises a first metal or semimetal and wherein the first metal or semimetal reactant reacts with the second surface to form a layer of reactant species comprising the first metal or semimetal, from the first metal or semimetal reactant but does not react with the first surface.

21 . The method of claim 16 , wherein the second metal or semimetal reactant comprises a second metal or semimetal and wherein the second metal or semimetal reactant penetrates the passivation layer on the first surface such that the second reactant reacts with the first surface to form the first material on the first surface and reacts with the second surface, having the deposited first metal or semimetal, to form the first material on the first surface and the second material on the second surface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2023
From: GIVENS, MICHAEL EUGENE; TOIS, EVA; HAUKKA, SUVI; NEVSTRUEVA, DARIA; DEZELAH, CHARLES
To: ASM IP HOLDING B.V.
Reel/Frame 062921/0240 →
Continuity (3)
Continuation 17216260 · Mar 29, 2021
Provisional Application 63001898 · Mar 30, 2020
Related Publication 20230203644A1 · Jun 29, 2023
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