IP Library › Granted Patent US 12,568,655
Granted Patent B2
US 12,568,655 · App. 18/533,358 · Granted Mar 3, 2026

Semiconductor device and manufacturing method thereof

Inventor: Shunpei Yamazaki (Setagaya, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10D30/6755H10B12/00H10D30/6734H10D30/6756H10D86/40H10D86/423H10D86/471H10D86/60H10D87/00H10D99/00H10D30/6713H10D30/6729
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Quick Facts
Patent No.
US 12,568,655
App. No.
18/533,358
Granted
Mar 3, 2026
Kind
B2
Abstract

A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.

Claims (106)

1 . A semiconductor device comprising:

a first transistor, a second transistor, and a third transistor,

wherein the first transistor comprises a first silicon semiconductor including a first channel formation region,

wherein the second transistor comprises a second silicon semiconductor including a second channel formation region,

wherein the third transistor comprises a first gate electrode, a first gate insulating layer, an oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a source electrode, and a drain electrode,

wherein the first gate electrode is provided over a first insulating layer,

wherein the first gate insulating layer is provided over the first gate electrode,

wherein the oxide semiconductor layer includes a third channel formation region,

wherein the oxide semiconductor layer is provided over the first gate insulating layer,

wherein the second gate insulating layer is provided over the oxide semiconductor layer,

wherein the second gate electrode is provided over the second gate insulating layer,

wherein a second insulating layer is provided over the second gate electrode,

wherein a third insulating layer is provided over the second insulating layer,

wherein the source electrode and the drain electrode are provided over the third insulating layer,

wherein the source electrode has a region in contact with the oxide semiconductor layer through a first opening opened in the second insulating layer and the third insulating layer,

wherein the drain electrode has a region in contact with the oxide semiconductor layer through a second opening opened in the second insulating layer and the third insulating layer,

wherein one of the source electrode and the drain electrode is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and

wherein the other of the source and the drain of the second transistor is not electrically connected to the third transistor.

2 . The semiconductor device according to claim 1 , wherein a width of the first gate electrode is larger than a width of the second gate electrode in a channel length direction of the third transistor.

3 . A semiconductor device comprising:

a first transistor, a second transistor, and a third transistor,

wherein the first transistor comprises a first silicon semiconductor including a first channel formation region,

wherein the second transistor comprises a second silicon semiconductor including a second channel formation region,

wherein the third transistor comprises a first gate electrode, a first gate insulating layer, an oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a source electrode, and a drain electrode,

wherein the first gate electrode is provided over a first insulating layer,

wherein the first gate insulating layer is provided over the first gate electrode,

wherein the oxide semiconductor layer includes a third channel formation region,

wherein the oxide semiconductor layer is provided over the first gate insulating layer,

wherein the second gate insulating layer is provided over the oxide semiconductor layer,

wherein the second gate electrode is provided over the second gate insulating layer,

wherein a second insulating layer is provided over the second gate electrode,

wherein a third insulating layer is provided over the second insulating layer,

wherein the source electrode and the drain electrode are provided over the third insulating layer,

wherein the source electrode has a region in contact with the oxide semiconductor layer through a first opening opened in the second insulating layer and the third insulating layer,

wherein the drain electrode has a region in contact with the oxide semiconductor layer through a second opening opened in the second insulating layer and the third insulating layer,

wherein one of the source electrode and the drain electrode is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein the other of the source and the drain of the second transistor is not electrically connected to the third transistor,

wherein a gate of the second transistor is electrically connected to a first wiring, and

wherein a gate of the third transistor is electrically connected to a second wiring different from the first wiring.

4 . The semiconductor device according to claim 3 , wherein a width of the first gate electrode is larger than a width of the second gate electrode in a channel length direction of the third transistor.

5 . A semiconductor device comprising:

a first transistor, a second transistor, and a third transistor,

wherein the first transistor comprises a first silicon semiconductor including a first channel formation region,

wherein the second transistor comprises a second silicon semiconductor including a second channel formation region,

wherein the third transistor comprises a first gate electrode, a first gate insulating layer, an oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a source electrode, and a drain electrode,

wherein the first gate electrode is provided over a first insulating layer,

wherein the first gate insulating layer is provided over the first gate electrode,

wherein the oxide semiconductor layer includes a third channel formation region,

wherein the oxide semiconductor layer is provided over the first gate insulating layer,

wherein the second gate insulating layer is provided over the oxide semiconductor layer,

wherein the second gate electrode is provided over the second gate insulating layer,

wherein a second insulating layer is provided over the second gate electrode,

wherein a third insulating layer is provided over the second insulating layer,

wherein the source electrode and the drain electrode are provided over the third insulating layer,

wherein the source electrode has a region in contact with the oxide semiconductor layer through a first opening opened in the second insulating layer and the third insulating layer,

wherein the drain electrode has a region in contact with the oxide semiconductor layer through a second opening opened in the second insulating layer and the third insulating layer,

wherein one of the source electrode and the drain electrode is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein the other of the source and the drain of the second transistor is not electrically connected to the third transistor, and

wherein the other of the source electrode and the drain electrode of the third transistor is not in direct electrical connection to the other of the source and the drain of the second transistor.

6 . The semiconductor device according to claim 5 , wherein a width of the first gate electrode is larger than a width of the second gate electrode in a channel length direction of the third transistor.

7 . A semiconductor device comprising:

a first transistor, a second transistor, and a third transistor,

wherein the first transistor comprises a first silicon semiconductor including a first channel formation region,

wherein the second transistor comprises a second silicon semiconductor including a second channel formation region,

wherein the third transistor comprises a first gate electrode, a first gate insulating layer, an oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a source electrode, and a drain electrode,

wherein the first gate electrode is provided over a first insulating layer,

wherein the first gate insulating layer is provided over the first gate electrode,

wherein the oxide semiconductor layer includes a third channel formation region,

wherein the oxide semiconductor layer is provided over the first gate insulating layer,

wherein the second gate insulating layer is provided over the oxide semiconductor layer,

wherein the second gate electrode is provided over the second gate insulating layer,

wherein a second insulating layer is provided over the second gate electrode,

wherein a third insulating layer is provided over the second insulating layer,

wherein the source electrode and the drain electrode are provided over the third insulating layer,

wherein the source electrode has a region in contact with the oxide semiconductor layer through a first opening opened in the second insulating layer and the third insulating layer,

wherein the drain electrode has a region in contact with the oxide semiconductor layer through a second opening opened in the second insulating layer and the third insulating layer,

wherein one of the source electrode and the drain electrode is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein the other of the source and the drain of the second transistor is not electrically connected to the third transistor,

wherein the second gate insulating layer has a region in contact with a top surface and a side surface of the oxide semiconductor layer, and

wherein the second gate insulating layer has a region in contact with a top surface of the first gate insulating layer.

8 . The semiconductor device according to claim 7 , wherein a width of the first gate electrode is larger than a width of the second gate electrode in a channel length direction of the third transistor.

9 . A semiconductor device comprising:

a first transistor, a second transistor, and a third transistor,

wherein the first transistor comprises a first silicon semiconductor including a first channel formation region,

wherein the second transistor comprises a second silicon semiconductor including a second channel formation region,

wherein the third transistor comprises a first gate electrode, a first gate insulating layer, an oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a source electrode, and a drain electrode,

wherein the first gate electrode is provided over a first insulating layer,

wherein the first gate insulating layer is provided over the first gate electrode,

wherein the oxide semiconductor layer includes a third channel formation region,

wherein the oxide semiconductor layer is provided over the first gate insulating layer,

wherein the second gate insulating layer is provided over the oxide semiconductor layer,

wherein the second gate electrode is provided over the second gate insulating layer,

wherein a second insulating layer is provided over the second gate electrode,

wherein a third insulating layer is provided over the second insulating layer,

wherein the source electrode and the drain electrode are provided over the third insulating layer,

wherein the source electrode has a region in contact with the oxide semiconductor layer through a first opening opened in the second insulating layer and the third insulating layer,

wherein the drain electrode has a region in contact with the oxide semiconductor layer through a second opening opened in the second insulating layer and the third insulating layer,

wherein one of the source electrode and the drain electrode is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein the other of the source and the drain of the second transistor is not electrically connected to the third transistor, and

wherein the other of the source and the drain of the second transistor is configured to be in a conductive state with the other of the source and the drain of the first transistor when the second transistor turns on.

10 . The semiconductor device according to claim 9 , wherein a width of the first gate electrode is larger than a width of the second gate electrode in a channel length direction of the third transistor.

Priority Claims (1)
JP 2010-293246 · Dec 28, 2010 · national
Continuity (5)
Continuation 17882728 · Aug 8, 2022
Continuation 16928254 · Jul 14, 2020
Continuation 15259389 · Sep 8, 2016
Continuation 13330811 · Dec 20, 2011
Related Publication 20240222517A1 · Jul 4, 2024
References Cited (400)
US 5528032A · Uchiyama · 1996 [cited by applicant]
US 5731856A · Kim et al. · 1998 [cited by applicant]
US 5744864A · Cillessen et al. · 1998 [cited by applicant]
US 5817548A · Noguchi et al. · 1998 [cited by applicant]
US 5943593A · Noguchi et al. · 1999 [cited by applicant]
US 6087679A · Yamazaki et al. · 2000 [cited by applicant]
US 6294274B1 · Kawazoe et al. · 2001 [cited by applicant]
US 6528816B1 · Jackson et al. · 2003 [cited by applicant]
US 6563174B2 · Kawasaki et al. · 2003 [cited by applicant]
US 6727522B1 · Kawasaki et al. · 2004 [cited by applicant]
US 6956236B1 · Sasaki et al. · 2005 [cited by applicant]
US 7049190B2 · Takeda et al. · 2006 [cited by applicant]
US 7061014B2 · Hosono et al. · 2006 [cited by applicant]
US 7064346B2 · Kawasaki et al. · 2006 [cited by applicant]
US 7105868B2 · Nause et al. · 2006 [cited by applicant]
US 7139214B2 · Atwood et al. · 2006 [cited by applicant]
US 7205640B2 · Yoshioka et al. · 2007 [cited by applicant]
US 7211825B2 · Shih et al. · 2007 [cited by applicant]
US 7282782B2 · Hoffman et al. · 2007 [cited by applicant]
US 7297977B2 · Hoffman et al. · 2007 [cited by applicant]
US 7323356B2 · Hosono et al. · 2008 [cited by applicant]
US 7326631B2 · Lander et al. · 2008 [cited by applicant]
US 7385224B2 · Ishii et al. · 2008 [cited by applicant]
US 7391667B2 · Atwood et al. · 2008 [cited by applicant]
US 7402506B2 · Levy et al. · 2008 [cited by applicant]
US 7411209B2 · Endo et al. · 2008 [cited by applicant]
US 7453065B2 · Saito et al. · 2008 [cited by applicant]
US 7453087B2 · Iwasaki · 2008 [cited by applicant]
US 7462862B2 · Hoffman et al. · 2008 [cited by applicant]
US 7468304B2 · Kaji et al. · 2008 [cited by applicant]
US 7501293B2 · Ito et al. · 2009 [cited by applicant]
US 7598520B2 · Hirao et al. · 2009 [cited by applicant]
US 7674650B2 · Akimoto et al. · 2010 [cited by applicant]
US 7732819B2 · Akimoto et al. · 2010 [cited by applicant]
US 7772053B2 · Kameshiro et al. · 2010 [cited by applicant]
US 7795627B2 · Yamazaki · 2010 [cited by applicant]
US 7804088B2 · Tanaka et al. · 2010 [cited by applicant]
US 7804174B2 · Sasaki et al. · 2010 [cited by applicant]
US 7884360B2 · Takechi et al. · 2011 [cited by applicant]
US 7935964B2 · Kim et al. · 2011 [cited by applicant]
US 7993964B2 · Hirao et al. · 2011 [cited by applicant]
US 8003981B2 · Iwasaki et al. · 2011 [cited by applicant]
US 8049225B2 · Yamazaki et al. · 2011 [cited by applicant]
US 8053253B2 · Goto. et al. · 2011 [cited by applicant]
US 8084331B2 · Ofuji et al. · 2011 [cited by applicant]
US 8093589B2 · Sugihara et al. · 2012 [cited by applicant]
US 8143115B2 · Omura et al. · 2012 [cited by applicant]
US 8148721B2 · Hayashi et al. · 2012 [cited by applicant]
US 8158975B2 · Akimoto · 2012 [cited by applicant]
US 8158976B2 · Son et al. · 2012 [cited by applicant]
US 8164090B2 · Iwasaki et al. · 2012 [cited by applicant]
US 8202365B2 · Umeda et al. · 2012 [cited by applicant]
US 8222092B2 · Yamazaki et al. · 2012 [cited by applicant]
US 8269220B2 · Ryu et al. · 2012 [cited by applicant]
US 8293595B2 · Yamazaki et al. · 2012 [cited by applicant]
US 8313980B2 · Akimoto · 2012 [cited by applicant]
US 8314032B2 · Kawamura et al. · 2012 [cited by applicant]
US 8354674B2 · Kimura · 2013 [cited by applicant]
US 8368066B2 · Yamazaki et al. · 2013 [cited by applicant]
US 8378341B2 · Hayashi et al. · 2013 [cited by applicant]
US 8384076B2 · Park et al. · 2013 [cited by applicant]
US 8384439B2 · Park et al. · 2013 [cited by applicant]
US 8395931B2 · Yamazaki et al. · 2013 [cited by applicant]
US 8399882B2 · Jeon et al. · 2013 [cited by applicant]
US 8409935B2 · Ryu et al. · 2013 [cited by applicant]
US 8420409B2 · Goto et al. · 2013 [cited by applicant]
US 8420442B2 · Takechi et al. · 2013 [cited by applicant]
US 8441047B2 · Godo et al. · 2013 [cited by applicant]
US 8445902B2 · Sato et al. · 2013 [cited by applicant]
US 8450732B2 · Kim et al. · 2013 [cited by applicant]
US 8471272B2 · Yamazaki · 2013 [cited by applicant]
US 8481377B2 · Akimoto et al. · 2013 [cited by applicant]
US 8482003B2 · Matsumura et al. · 2013 [cited by applicant]
US 8502217B2 · Sato et al. · 2013 [cited by applicant]
US 8513661B2 · Takahashi et al. · 2013 [cited by applicant]
US 8530273B2 · Den Boer · 2013 [cited by applicant]
US 8546198B2 · Ryu et al. · 2013 [cited by applicant]
US 8546199B2 · Ryu et al. · 2013 [cited by applicant]
US 8603876B2 · Luk et al. · 2013 [cited by applicant]
US 8604532B2 · Luk et al. · 2013 [cited by applicant]
US 8618537B2 · Kaneko et al. · 2013 [cited by applicant]
US 8624240B2 · Sato et al. · 2014 [cited by applicant]
US 8648403B2 · Luk et al. · 2014 [cited by applicant]
US 8700910B2 · Tadokoro · 2014 [cited by applicant]
US 8785242B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8841710B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8889480B2 · Takechi et al. · 2014 [cited by applicant]
US 9012918B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9022293B2 · Osada et al. · 2015 [cited by applicant]
US 9077523B2 · Tadokoro · 2015 [cited by applicant]
US 9082688B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9082857B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9105511B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9105659B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9129937B2 · Hayashi et al. · 2015 [cited by applicant]
US 9136390B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9202546B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9209026B2 · Takechi et al. · 2015 [cited by applicant]
US 9312394B2 · Hayashi et al. · 2016 [cited by applicant]
US 9397194B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9412798B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9531214B2 · Osada et al. · 2016 [cited by applicant]
US 9570470B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9705003B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9711651B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9754816B2 · Hayashi et al. · 2017 [cited by applicant]
US 9859441B2 · Yamazaki et al. · 2018 [cited by applicant]
US 9905699B2 · Hayashi et al. · 2018 [cited by applicant]
US 10128381B2 · Yamazaki et al. · 2018 [cited by applicant]
US 10714627B2 · Hayashi et al. · 2020 [cited by applicant]
US 20010046027A1 · Tai et al. · 2001 [cited by applicant]
US 20020056838A1 · Ogawa · 2002 [cited by applicant]
US 20020132454A1 · Ohtsu et al. · 2002 [cited by applicant]
US 20030138998A1 · Yamazaki et al. · 2003 [cited by applicant]
US 20030189401A1 · Kido et al. · 2003 [cited by applicant]
US 20030218222A1 · Wager, II et al. · 2003 [cited by applicant]
US 20040036104A1 · Nakashima · 2004 [cited by applicant]
US 20040038446A1 · Takeda et al. · 2004 [cited by applicant]
US 20040127038A1 · Carcia et al. · 2004 [cited by applicant]
US 20050017302A1 · Hoffman · 2005 [cited by applicant]
US 20050039670A1 · Hosono et al. · 2005 [cited by applicant]
US 20050173734A1 · Yoshioka et al. · 2005 [cited by applicant]
US 20050199879A1 · Hoffman et al. · 2005 [cited by applicant]
US 20050199959A1 · Chiang et al. · 2005 [cited by applicant]
US 20050275038A1 · Shih · 2005 [cited by examiner]
US 20060035452A1 · Carcia et al. · 2006 [cited by applicant]
US 20060043377A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060091793A1 · Baude et al. · 2006 [cited by applicant]
US 20060108529A1 · Saito et al. · 2006 [cited by applicant]
US 20060108636A1 · Sano et al. · 2006 [cited by applicant]
US 20060110867A1 · Yabuta et al. · 2006 [cited by applicant]
US 20060113536A1 · Kumomi et al. · 2006 [cited by applicant]
US 20060113539A1 · Sano et al. · 2006 [cited by applicant]
US 20060113549A1 · Den et al. · 2006 [cited by applicant]
US 20060113565A1 · Abe et al. · 2006 [cited by applicant]
US 20060169973A1 · Isa et al. · 2006 [cited by applicant]
US 20060170067A1 · Maekawa et al. · 2006 [cited by applicant]
US 20060170111A1 · Isa et al. · 2006 [cited by applicant]
US 20060197092A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060208977A1 · Kimura · 2006 [cited by applicant]
US 20060214008A1 · Asami et al. · 2006 [cited by applicant]
US 20060228974A1 · Thelss et al. · 2006 [cited by applicant]
US 20060231882A1 · Kim et al. · 2006 [cited by applicant]
US 20060238135A1 · Kimura · 2006 [cited by applicant]
US 20060244107A1 · Sugihara et al. · 2006 [cited by applicant]
US 20060284171A1 · Levy et al. · 2006 [cited by applicant]
US 20060284172A1 · Ishii · 2006 [cited by applicant]
US 20060292777A1 · Dunbar · 2006 [cited by applicant]
US 20070024187A1 · Shin et al. · 2007 [cited by applicant]
US 20070046191A1 · Saito · 2007 [cited by applicant]
US 20070052025A1 · Yabuta · 2007 [cited by applicant]
US 20070054507A1 · Kaji et al. · 2007 [cited by applicant]
US 20070072439A1 · Akimoto et al. · 2007 [cited by applicant]
US 20070090365A1 · Hayashi et al. · 2007 [cited by applicant]
US 20070108446A1 · Akimoto · 2007 [cited by applicant]
US 20070152217A1 · Lai et al. · 2007 [cited by applicant]
US 20070172591A1 · Seo et al. · 2007 [cited by applicant]
US 20070187678A1 · Hirao et al. · 2007 [cited by applicant]
US 20070187760A1 · Furuta et al. · 2007 [cited by applicant]
US 20070194379A1 · Hosono et al. · 2007 [cited by applicant]
US 20070252928A1 · Ito et al. · 2007 [cited by applicant]
US 20070263131A1 · Uemoto · 2007 [cited by applicant]
US 20070272922A1 · Kim et al. · 2007 [cited by applicant]
US 20070278490A1 · Hirao et al. · 2007 [cited by applicant]
US 20070287296A1 · Chang · 2007 [cited by applicant]
US 20080006877A1 · Mardilovich et al. · 2008 [cited by applicant]
US 20080038882A1 · Takechi et al. · 2008 [cited by applicant]
US 20080038929A1 · Chang · 2008 [cited by applicant]
US 20080050595A1 · Nakagawara et al. · 2008 [cited by applicant]
US 20080073653A1 · Iwasaki · 2008 [cited by applicant]
US 20080083950A1 · Pan et al. · 2008 [cited by applicant]
US 20080106191A1 · Kawase · 2008 [cited by applicant]
US 20080116500A1 · Tokunaga · 2008 [cited by applicant]
US 20080128689A1 · Lee et al. · 2008 [cited by applicant]
US 20080129195A1 · Ishizaki et al. · 2008 [cited by applicant]
US 20080166834A1 · Kim et al. · 2008 [cited by applicant]
US 20080182358A1 · Cowdery-Corvan et al. · 2008 [cited by applicant]
US 20080224133A1 · Park et al. · 2008 [cited by applicant]
US 20080254569A1 · Hoffman et al. · 2008 [cited by applicant]
US 20080258139A1 · Ito et al. · 2008 [cited by applicant]
US 20080258140A1 · Lee et al. · 2008 [cited by applicant]
US 20080258141A1 · Park et al. · 2008 [cited by applicant]
US 20080258143A1 · Kim et al. · 2008 [cited by applicant]
US 20080277656A1 · Park et al. · 2008 [cited by applicant]
US 20080283848A1 · Yamazaki · 2008 [cited by applicant]
US 20080296568A1 · Ryu et al. · 2008 [cited by applicant]
US 20080303020A1 · Shin et al. · 2008 [cited by applicant]
US 20080308806A1 · Akimoto et al. · 2008 [cited by applicant]
US 20090008645A1 · Yamazaki et al. · 2009 [cited by applicant]
US 20090020817A1 · Park · 2009 [cited by examiner]
US 20090065771A1 · Iwasaki et al. · 2009 [cited by applicant]
US 20090068773A1 · Lai et al. · 2009 [cited by applicant]
US 20090073325A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090114910A1 · Chang · 2009 [cited by applicant]
US 20090134399A1 · Sakakura et al. · 2009 [cited by applicant]
US 20090152506A1 · Umeda et al. · 2009 [cited by applicant]
US 20090152541A1 · Maekawa et al. · 2009 [cited by applicant]
US 20090206332A1 · Son · 2009 [cited by examiner]
US 20090278122A1 · Hosono et al. · 2009 [cited by applicant]
US 20090280600A1 · Hosono et al. · 2009 [cited by applicant]
US 20090283763A1 · Park et al. · 2009 [cited by applicant]
US 20100051936A1 · Hayashi et al. · 2010 [cited by applicant]
US 20100065837A1 · Omura et al. · 2010 [cited by applicant]
US 20100065844A1 · Tokunaga · 2010 [cited by applicant]
US 20100084655A1 · Iwasaki et al. · 2010 [cited by applicant]
US 20100092800A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100102314A1 · Miyairi et al. · 2010 [cited by applicant]
US 20100109002A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100117073A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100148171A1 · Hayashi et al. · 2010 [cited by applicant]
US 20100159639A1 · Sakata · 2010 [cited by applicant]
US 20100181575A1 · Makita et al. · 2010 [cited by applicant]
US 20100193785A1 · Kimura · 2010 [cited by applicant]
US 20100224871A1 · Yamaguchi et al. · 2010 [cited by applicant]
US 20100244022A1 · Takahashi et al. · 2010 [cited by applicant]
US 20100283049A1 · Sato et al. · 2010 [cited by applicant]
US 20100295037A1 · Hironaka · 2010 [cited by applicant]
US 20110095288A1 · Morosawa et al. · 2011 [cited by applicant]
US 20110147738A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110175090A1 · Sugihara et al. · 2011 [cited by applicant]
US 20110182110A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110204362A1 · Akimoto et al. · 2011 [cited by applicant]
US 20110210328A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110212571A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110215318A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110215328A1 · Morosawa et al. · 2011 [cited by applicant]
US 20110256684A1 · Iwasaki et al. · 2011 [cited by applicant]
US 20110284845A1 · Endo et al. · 2011 [cited by applicant]
US 20120001167A1 · Morosawa · 2012 [cited by applicant]
US 20120161121A1 · Yamazaki · 2012 [cited by applicant]
US 20120161122A1 · Yamazaki · 2012 [cited by applicant]
US 20120161124A1 · Yamazaki · 2012 [cited by applicant]
US 20120161125A1 · Yamazaki · 2012 [cited by applicant]
US 20120161126A1 · Yamazaki · 2012 [cited by applicant]
US 20120168750A1 · Hayashi et al. · 2012 [cited by applicant]
US 20120242627A1 · Kim et al. · 2012 [cited by applicant]
US 20130037793A1 · Pan et al. · 2013 [cited by applicant]
US 20130045568A1 · Akimoto · 2013 [cited by applicant]
US 20130127694A1 · Kim et al. · 2013 [cited by applicant]
US 20130309808A1 · Zhang et al. · 2013 [cited by applicant]
US 20150084048A1 · Hayashi et al. · 2015 [cited by applicant]
US 20170077763A1 · Osada et al. · 2017 [cited by applicant]
US 20170243897A1 · Yamazaki et al. · 2017 [cited by applicant]
US 20170317215A1 · Yamazaki et al. · 2017 [cited by applicant]
US 20190157314A1 · Kimura · 2019 [cited by applicant]
US 20200185530A1 · Yamazaki et al. · 2020 [cited by applicant]
US 20220102391A1 · Kimura · 2022 [cited by applicant]
US 20220102392A1 · Kimura · 2022 [cited by applicant]
US 20220102393A1 · Kimura · 2022 [cited by applicant]
EP 0463817A · 1992 [cited by applicant]
EP 1063693A · 2000 [cited by applicant]
EP 1209748A · 2002 [cited by applicant]
EP 1443130A · 2004 [cited by applicant]
EP 1737044A · 2006 [cited by applicant]
EP 1895450A · 2008 [cited by applicant]
EP 2120267A · 2009 [cited by applicant]
EP 2159845A · 2010 [cited by applicant]
EP 2172804A · 2010 [cited by applicant]
EP 2175493A · 2010 [cited by applicant]
EP 2226847A · 2010 [cited by applicant]
EP 2408011A · 2012 [cited by applicant]
EP 2927965A · 2015 [cited by applicant]
JP 60130160A · 1985 [cited by applicant]
JP 60198861A · 1985 [cited by applicant]
JP 62274773A · 1987 [cited by applicant]
JP 63210022A · 1988 [cited by applicant]
JP 63210023A · 1988 [cited by applicant]
JP 63210024A · 1988 [cited by applicant]
JP 63215519A · 1988 [cited by applicant]
JP 63239117A · 1988 [cited by applicant]
JP 63265818A · 1988 [cited by applicant]
JP 04056165A · 1992 [cited by applicant]
JP 05251705A · 1993 [cited by applicant]
JP 06275697A · 1994 [cited by applicant]
JP 08264794A · 1996 [cited by applicant]
JP 11505377 · 1999 [cited by applicant]
JP 11233789A · 1999 [cited by applicant]
JP 2000026119A · 2000 [cited by applicant]
JP 2000044236A · 2000 [cited by applicant]
JP 2000150900A · 2000 [cited by applicant]
JP 2002076356A · 2002 [cited by applicant]
JP 2002289859A · 2002 [cited by applicant]
JP 2002368226A · 2002 [cited by applicant]
JP 2003086000A · 2003 [cited by applicant]
JP 2003086808A · 2003 [cited by applicant]
JP 2004103957A · 2004 [cited by applicant]
JP 2004265944A · 2004 [cited by applicant]
JP 2004273614A · 2004 [cited by applicant]
JP 2004273732A · 2004 [cited by applicant]
JP 2005243059A · 2005 [cited by applicant]
JP 2006518106 · 2006 [cited by applicant]
JP 2007012040A · 2007 [cited by applicant]
JP 2007073563A · 2007 [cited by applicant]
JP 2007073705A · 2007 [cited by applicant]
JP 2007096055A · 2007 [cited by applicant]
JP 2007123861A · 2007 [cited by applicant]
JP 2007220816A · 2007 [cited by applicant]
JP 2007250983A · 2007 [cited by applicant]
JP 2007529117 · 2007 [cited by applicant]
JP 2008042088A · 2008 [cited by applicant]
JP 2008086194A · 2008 [cited by applicant]
JP 2008103609A · 2008 [cited by applicant]
JP 2008117863A · 2008 [cited by applicant]
JP 2008153329A · 2008 [cited by applicant]
JP 2008166716A · 2008 [cited by applicant]
JP 2008277665A · 2008 [cited by applicant]
JP 2009033145A · 2009 [cited by applicant]
JP 2009135350A · 2009 [cited by applicant]
JP 2009135380A · 2009 [cited by applicant]
JP 2009141002A · 2009 [cited by applicant]
JP 2009167087A · 2009 [cited by applicant]
JP 2009176865A · 2009 [cited by applicant]
JP 2009528670 · 2009 [cited by applicant]
JP 2009212443A · 2009 [cited by applicant]
JP 2009534821 · 2009 [cited by applicant]
JP 2009267399A · 2009 [cited by applicant]
JP 2009272427A · 2009 [cited by applicant]
JP 2010016163A · 2010 [cited by applicant]
JP 2010016362A · 2010 [cited by applicant]
JP 2010056546A · 2010 [cited by applicant]
JP 2010062229A · 2010 [cited by applicant]
JP 2010062548A · 2010 [cited by applicant]
JP 2010080952A · 2010 [cited by applicant]
JP 2010093070A · 2010 [cited by applicant]
JP 2010107977A · 2010 [cited by applicant]
JP 2010114432A · 2010 [cited by applicant]
JP 2010135774A · 2010 [cited by applicant]
JP 2010141230A · 2010 [cited by applicant]
JP 2010147458A · 2010 [cited by applicant]
JP 2010199307A · 2010 [cited by applicant]
JP 2010206137A · 2010 [cited by applicant]
JP 2010531059 · 2010 [cited by applicant]
JP 2010251735A · 2010 [cited by applicant]
JP 2010263195A · 2010 [cited by applicant]
JP 2010272663A · 2010 [cited by applicant]
KR 20010053039A · 2001 [cited by applicant]
KR 20090089444A · 2009 [cited by applicant]
KR 20090119666A · 2009 [cited by applicant]
KR 20100022051A · 2010 [cited by applicant]
KR 20100061064A · 2010 [cited by applicant]
KR 20100076894A · 2010 [cited by applicant]
KR 20100108291A · 2010 [cited by applicant]
KR 20100113039A · 2010 [cited by applicant]
TW 200847441 · 2008 [cited by applicant]
WO WO1999066540 · 1999 [cited by applicant]
WO WO2000036641 · 2000 [cited by applicant]
WO WO2004070833 · 2004 [cited by applicant]
WO WO2004114391 · 2004 [cited by applicant]
WO WO2005093847 · 2005 [cited by applicant]
WO WO2006129816 · 2006 [cited by applicant]
WO WO2007119386 · 2007 [cited by applicant]
WO WO2007122083 · 2007 [cited by applicant]
WO WO2007142167 · 2007 [cited by applicant]
WO WO2008069056 · 2008 [cited by applicant]
WO WO2008069255 · 2008 [cited by applicant]
WO WO2008142911 · 2008 [cited by applicant]
WO WO2008156311 · 2008 [cited by applicant]
WO WO2008156312 · 2008 [cited by applicant]
WO WO2009072532 · 2009 [cited by applicant]
WO WO2009093722 · 2009 [cited by applicant]
WO WO2009110623 · 2009 [cited by applicant]
WO WO2009136645 · 2009 [cited by applicant]
WO WO2010001783 · 2010 [cited by applicant]
WO WO2011074407 · 2011 [cited by applicant]
Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition:The “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. [cited by applicant]
Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. [cited by applicant]
Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. [cited by applicant]
Kimizuka.N et al., “Spinel, YbFe2O4, and Yb2Fe3O7 Types of Structures for Compounds in the In2O3 and Sc2O3—A2O3—BO Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at Temperatures Over 1000° C.”, Journal of Soli… [cited by applicant]
Nakamura.M et al., “The phase relations in the In2O3—Ga2ZnO4—ZnO system at 1350° C.”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315, Elsevier. [cited by applicant]
Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. [cited by applicant]
Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State Chem… [cited by applicant]
Chern.H et al., “An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. [cited by applicant]
Prins.M et al., “A Ferroelectric Transparent Thin-Film Transistor”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. [cited by applicant]
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355, Elsevier. [cited by applicant]
Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. [cited by applicant]
Tsuda.K et al., “Ultra Low Power Consumption Technologies for Mobile TFT-LCDs”, IDW '02 : Proceedings of the 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. [cited by applicant]
Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. [cited by applicant]
Ikeda.T et al., “Full-Functional System Liquid Crystal Display Using CG-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. [cited by applicant]
Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492. [cited by applicant]
Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. [cited by applicant]
Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer”, Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. [cited by applicant]
Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED”, IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. [cited by applicant]
Hosono.H, “68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. [cited by applicant]
Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AMLCDS”, J. Soc. Inf. Display (Journal of the Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. [cited by applicant]
Park.S et al., “Challenge to Future Displays: Transparent AM-OLED Driven By Peald Grown ZnO TFT”, IMID '07 DIGEST, 2007, pp. 1249-1252. [cited by applicant]
Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers… [cited by applicant]
Miyasaka.M, “SUFTLA Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. [cited by applicant]
Kurokawa.Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. [cited by applicant]
Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, N… [cited by applicant]
Lee.J et al., “World's Largest (15-Inch) XGA AMLCD Panel Using IGZO Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. [cited by applicant]
Park.J et al., “Amorphous Indium-Gallium-Zinc Oxide TFTs and Their Application for Large Size AMOLED”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 275-278. [cited by applicant]
Takahashi.M et al., “Theoretical Analysis of IGZO Transparent Amorphous Oxide Semiconductor”, IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. [cited by applicant]
Sakata.J et al., “Development of 4.0-In. AMOLED Display With Driver Circuit Using Amorphous In—Ga—Zn-Oxide TFTs”, IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. [cited by applicant]
Asaoka.Y et al., “29.1:Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. [cited by applicant]
Nowatari.H et al., “60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDs”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. [cited by applicant]
Jin.D et al., “65.2: Distinguished Paper: World-Largest (6.5″) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technica… [cited by applicant]
Lee.M et al., “15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. [cited by applicant]
Cho.D et al., “21.2:Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. [cited by applicant]
Kikuchi.H et al., “39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 5… [cited by applicant]
Osada.T et al., “15.2: Development of Driver-Integrated Panel using Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 184-187. [cited by applicant]