Molded direct bonded and interconnected stack
Dies and/or wafers are stacked and bonded in various arrangements including stacks, and may be covered with a molding to facilitate handling, packaging, and the like. In various examples, the molding may cover more or less of a stack, to facilitate connectivity with the devices of the stack, to enhance thermal management, and so forth.
1. A microelectronic assembly comprising:
a substrate having a first lateral footprint;
a first die and a first bonding layer on the first die, the first die having a second lateral footprint, the first bonding layer directly bonded to the substrate without an adhesive;
a second die having a microelectronic circuit element formed therein and disposed over the first die, the second die having a third lateral footprint, the first die directly bonded to a second bonding layer on the second die without an adhesive;
a first compound disposed adjacent a side wall of the first die; and
a second compound deposited on and laterally adjacent the first compound,
wherein the second lateral footprint is smaller than the first lateral footprint and smaller than the third lateral footprint.
2. The microelectronic assembly of claim 1 , wherein the first and second compounds have different material compositions.
3. The microelectronic assembly of claim 1 , wherein a side edge of the second die is laterally offset from a side edge of the first die.
4. The microelectronic assembly of claim 1 , wherein the first and second compounds have different coefficients of thermal expansion (CTEs).
5. The microelectronic assembly of claim 1 , wherein the second compound comprises silica.
6. The microelectronic assembly of claim 1 , wherein the first compound comprises an inorganic material.
7. The microelectronic assembly of claim 1 , further comprising conductive features at a surface of the second die opposite the second bonding layer, the conductive features configured to electrically connect to another component.
8. The microelectronic assembly of claim 7 , wherein the surface of the second die is free of the first compound.
9. The microelectronic assembly of claim 7 , further comprising a plurality of through-substrate vias (TSVs) in the second die.
10. The microelectronic assembly of claim 9 , wherein the first die includes a first plurality of pads, wherein the plurality of TSVs in the second die are connected to a second plurality of pads in the second bonding layer, the second plurality of pads directly bonded to the first plurality of pads.
11. The microelectronic assembly of claim 1 , wherein the substrate has a first lateral footprint larger than a second lateral footprint of the first die, and wherein the second lateral footprint of the first die is smaller than a third lateral footprint of the second die.
12. The microelectronic assembly of claim 11 , wherein the first lateral footprint of the substrate is larger than the third lateral footprint of the second die.
13. The microelectronic assembly of claim 1 , wherein a first die area of the first die is smaller than a second die area of the second die.
14. The microelectronic assembly of claim 1 , wherein the first die and the second bonding layer on the second die are directly bonded with dielectric-to-dielectric and metal-to-metal direct bonds.
15. The microelectronic assembly of claim 1 , wherein the first die comprises a memory die.
16. The microelectronic assembly of claim 1 , wherein the first encapsulating layer comprises multiple layers.
17. The microelectronic assembly of claim 1 , wherein the first encapsulating layer comprises a molding compound.
18. The microelectronic assembly of claim 1 , wherein a portion of the first encapsulating layer is disposed over a portion of the first die.
19. The microelectronic assembly of claim 1 ,
wherein the first compound is also deposited adjacent a side wall of the second die, and
wherein the second compound is also deposited on and laterally adjacent a portion of the first compound deposited adjacent the side wall of the second die.
20. The microelectronic assembly of claim 1 , wherein the second compound comprises an inorganic material.
21. A microelectronic assembly comprising:
a substrate;
a first die and a first bonding layer on the first die, the first bonding layer directly bonded to the substrate without an adhesive, the first die comprising a memory die;
a second die having a microelectronic circuit element formed therein and disposed over the first die, the first die hybrid bonded to a second bonding layer on the second die;
a first compound disposed adjacent a side wall of the first die; and
a second compound deposited on and laterally adjacent the first compound,
wherein a surface of the second die opposite the second bonding layer comprises conductive features configured to electrically connect to another component, the surface of the second die free of the first compound.
22. The microelectronic assembly of claim 21 , wherein the first and second compounds have different material compositions.
23. The microelectronic assembly of claim 21 , wherein the second compound comprises silica.
24. The microelectronic assembly of claim 21 , wherein the second compound comprises an inorganic material.
25. The microelectronic assembly of claim 21 , further comprising a plurality of through-substrate vias (TSVs) in the second die.
26. The microelectronic assembly of claim 25 , wherein the first die includes a first plurality of pads, wherein the plurality of TSVs in the second die are connected to a second plurality of pads in the second bonding layer, the second plurality of pads directly bonded to the first plurality of pads.
27. The microelectronic assembly of claim 21 , wherein the substrate has a first lateral footprint larger than a second lateral footprint of the first die, and wherein the second lateral footprint of the first die is smaller than a third lateral footprint of the second die.
28. The microelectronic assembly of claim 27 , wherein the first lateral footprint of the substrate is larger than the third lateral footprint of the second die.
29. A microelectronic assembly comprising:
a substrate having a first lateral footprint;
a first die and a first bonding layer on the first die, the first bonding layer directly bonded to the substrate without an adhesive, the first die comprising a memory die having a second lateral footprint smaller than the first lateral footprint;
a second die having a microelectronic circuit element formed therein and disposed over the first die, the first die hybrid bonded to a second bonding layer on the second die, the second die having a third lateral footprint smaller than the first lateral footprint and larger than the second lateral footprint; and
a casing disposed adjacent a side wall of the first die.
30. The microelectronic assembly of claim 21 , wherein the first compound comprises an inorganic material.
31. The microelectronic assembly of claim 29 , wherein the inorganic casing comprises multiple layers.
32. The microelectronic assembly of claim 31 , wherein the multiple layers comprise first and second layers comprising two different materials.
33. The microelectronic assembly of claim 29 , further comprising a plurality of through-substrate vias (TSVs) in the second die, wherein the first die includes a first plurality of pads, wherein the plurality of TSVs in the second die are connected to a second plurality of pads in the second bonding layer, the second plurality of pads directly bonded to the first plurality of pads.
34. The microelectronic assembly of claim 29 , wherein at least two side edges of the first die are disposed within the third lateral footprint of the second die.
35. The microelectronic assembly of claim 29 , wherein the casing comprises an inorganic casing.