IP Library › Granted Patent US 12,272,677
Granted Patent B2
US 12,272,677 · App. 18/589,231 · Granted Apr 8, 2025

Direct bonded stack structures for increased reliability and improved yield in microelectronics

Inventors: Cyprian Emeka Uzoh (San Jose, CA); Rajesh Katkar (Milpitas, CA); Thomas Workman (San Jose, CA); Guilian Gao (San Jose, CA); Gaius Gillman Fountain, Jr. (Youngsville, NC); Laura Wills Mirkarimi (Sunol, CA); Belgacem Haba (Saratoga, CA); Gabriel Z. Guevara (San Jose, CA); Joy Watanabe (Campbell, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L25/0657H01L21/561H01L23/3121H01L24/97H01L2224/0401H01L2924/3511H01L2924/35121
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Quick Facts
Patent No.
US 12,272,677
App. No.
18/589,231
Granted
Apr 8, 2025
Kind
B2
Abstract

Direct bonded stack structures for increased reliability and improved yields in microelectronics are provided. Structural features and stack configurations are provided for memory modules and 3DICs to reduce defects in vertically stacked dies. Example processes alleviate warpage stresses between a thicker top die and direct bonded dies beneath it, for example. An etched surface on the top die may relieve warpage stresses. An example stack may include a compliant layer between dies. Another stack configuration replaces the top die with a layer of molding material to circumvent warpage stresses. An array of cavities on a bonding surface can alleviate stress forces. One or more stress balancing layers may also be created on a side of the top die or between other dies to alleviate or counter warpage. Rounding of edges can prevent stresses and pressure forces from being destructively transmitted through die and substrate layers. These measures may be applied together or in combinations in a single package.

Claims (34)

1. An apparatus comprising:

a substrate;

a die stack on the substrate, the die stack comprising a plurality of dies including:

a first integrated device die comprising a first integrated circuit;

a second integrated device die comprising a second integrated circuit, the first integrated device die hybrid bonded to a first bonding layer on the second integrated device die; and

a dummy die directly bonded to a second bonding layer on an underlying die of the die stack without an intervening adhesive;

a first lateral die support layer disposed along at least a portion of a sidewall of the first integrated device die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first integrated device die, the first lateral die support layer having a laterally outermost side surface; and

a second lateral die support layer disposed on the substrate and adjacent the laterally outermost side surface of the first lateral die support layer, the second lateral die support layer covering an entirety of the laterally outermost side surface of the first lateral die support layer.

2. The apparatus of claim 1 , wherein the dummy die comprises a top die of the die stack.

3. The apparatus of claim 1 , wherein the dummy die has a greater vertical thickness than the underlying die on which the dummy die is mounted.

4. The apparatus of claim 1 , wherein the dummy die has at least one horizontal dimension greater than a corresponding horizontal dimension of the underlying die on which the dummy die is mounted.

5. The apparatus of claim 1 , wherein the first lateral die support layer comprises an encapsulant.

6. The apparatus of claim 5 , wherein the encapsulant comprises a molding compound or underfill.

7. The apparatus of claim 1 , wherein the underlying die is the first integrated device die.

8. The apparatus of claim 1 , wherein an entirety of the second lateral die support layer is disposed outside the die stack.

9. The apparatus of claim 1 , wherein the second lateral die support layer comprises a molding material.

10. The apparatus of claim 1 , wherein at least one of the first and second integrated device dies comprises a memory module.

11. The apparatus of claim 1 , wherein a thickness of each of the first and second dies is less than 55 microns.

12. An apparatus comprising:

a die stack, the die stack comprising a plurality of dies including:

a first integrated device die comprising a first integrated circuit;

a second integrated device die comprising a second integrated circuit, the first integrated device die hybrid bonded to a first bonding layer on the second integrated device die; and

a top die directly bonded to a second bonding layer on the first integrated device die without an adhesive, the top die comprising a dummy die;

a first lateral die support layer disposed along at least a portion of a sidewall of the first integrated device die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first integrated device die; and

a second lateral die support layer disposed laterally adjacent the top die and at least a portion of the first lateral die support layer, an entirety of the second lateral die support layer disposed outside the die stack.

13. The apparatus of claim 12 , wherein the first lateral die support layer abuts a sidewall of the first integrated device die but not a sidewall of the top die.

14. The apparatus of claim 12 , wherein the top die is a top-most die of the die stack.

15. The apparatus of claim 12 , wherein the top die has a greater vertical thickness than each of the first and second integrated device dies.

16. The apparatus of claim 12 , wherein the first lateral die support layer comprises an encapsulant that covers an entirety of the sidewall of the first integrated device die.

17. The apparatus of claim 16 , wherein the encapsulant comprises a molding compound or underfill.

18. The apparatus of claim 12 , wherein the second lateral die support layer comprises a molding material.

19. The apparatus of claim 12 , wherein at least one of the first and second integrated device dies comprises a memory module.

20. The apparatus of claim 12 , wherein the second lateral die support layer is disposed over an entirety of a laterally outermost surface of the first lateral die support layer.

21. The apparatus of claim 13 , wherein the first lateral die support layer comprises one or more lateral die support structures.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2024
From: UZOH, CYPRIAN EMEKA; KATKAR, RAJESH; WORKMAN, THOMAS; GAO, GUILIAN; FOUNTAIN, GAIUS GILLMAN, JR.; MIRKARIMI, LAURA WILLS; HABA, BELGACEM; GUEVARA, GABRIEL Z.; WATANABE, JOY
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 066938/0053 →
CHANGE OF NAME Recorded Mar 28, 2024
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 066945/0567 →
Continuity (4)
Continuation 17681563 · Feb 25, 2022
Continuation 16911360 · Jun 24, 2020
Provisional Application 62866965 · Jun 26, 2019
Related Publication 20240203948A1 · Jun 20, 2024
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