IP Library › Granted Patent US 12,302,645
Granted Patent B2
US 12,302,645 · App. 18/214,623 · Granted May 13, 2025

Method for manufacturing semiconductor device

Inventors: Toshinari Sasaki (Atsugi, JP); Junichiro Sakata (Atsugi, JP); Hiroki Ohara (Sagamihara, JP); Shunpei Yamazaki (Setagaya, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L29/66969H01L27/1225H01L27/124H01L29/24H01L29/42356H01L29/42384H01L29/66742H01L29/78606H01L29/78618H01L29/7869H01L29/78696
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Quick Facts
Patent No.
US 12,302,645
App. No.
18/214,623
Granted
May 13, 2025
Kind
B2
Abstract

It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Claims (63)

1. A display device comprising:

a transistor, a pixel electrode layer, and a terminal portion,

wherein the transistor comprises:

a first conductive layer over a substrate;

a first insulating layer over the first conductive layer;

a first oxide semiconductor layer over the first insulating layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a second conductive layer and a third conductive layer electrically connected to the second oxide semiconductor layer,

wherein the display device further comprises:

a second insulating layer over the second conductive layer and the third conductive layer;

a third insulating layer over the second insulating layer; and

a fourth conductive layer over the third insulating layer, the fourth conductive layer comprising the same material as the pixel electrode layer,

wherein the fourth conductive layer has a region overlapping with the first conductive layer and a region overlapping with the first oxide semiconductor layer and the second oxide semiconductor layer,

wherein the pixel electrode layer has a region electrically connected to one of the second conductive layer and the third conductive layer,

wherein the terminal portion comprises:

a fifth conductive layer comprising the same material as the first conductive layer;

the first insulating layer over the fifth conductive layer;

a sixth conductive layer over the first insulating layer, the sixth conductive layer comprising the same material as the second conductive layer and the third conductive layer; and

a seventh conductive layer over the second insulating layer, the seventh conductive layer comprising the same material as the pixel electrode layer, and

wherein the seventh conductive layer has a region electrically connected to the fifth conductive layer and the sixth conductive layer.

2. A display device comprising:

a transistor, a pixel electrode layer, and a terminal portion,

wherein the transistor comprises:

a first conductive layer over a substrate;

a first insulating layer over the first conductive layer;

a first oxide semiconductor layer over the first insulating layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a second conductive layer and a third conductive layer electrically connected to the second oxide semiconductor layer,

wherein the display device further comprises:

a second insulating layer over the second conductive layer and the third conductive layer;

a third insulating layer over the second insulating layer; and

a fourth conductive layer over the third insulating layer, the fourth conductive layer comprising the same material as the pixel electrode layer,

wherein the fourth conductive layer has a region overlapping with the first conductive layer and a region overlapping with the first oxide semiconductor layer and the second oxide semiconductor layer,

wherein the pixel electrode layer has a region electrically connected to one of the second conductive layer and the third conductive layer,

wherein the terminal portion comprises:

a fifth conductive layer comprising the same material as the first conductive layer;

the first insulating layer over the fifth conductive layer;

a sixth conductive layer over the first insulating layer, the sixth conductive layer comprising the same material as the second conductive layer and the third conductive layer; and

a seventh conductive layer over the second insulating layer, the seventh conductive layer comprising the same material as the pixel electrode layer,

wherein the seventh conductive layer has a region electrically connected to the fifth conductive layer and the sixth conductive layer, and

wherein the pixel electrode layer and the fourth conductive layer are in contact with the third insulating layer.

3. A display device comprising:

a transistor, a pixel electrode layer, and a terminal portion,

wherein the transistor comprises:

a first conductive layer over a substrate;

a first insulating layer over the first conductive layer;

a first oxide semiconductor layer over the first insulating layer;

a second oxide semiconductor layer over the first oxide semiconductor layer; and

a second conductive layer and a third conductive layer electrically connected to the second oxide semiconductor layer,

wherein the display device further comprises:

a second insulating layer over the second conductive layer and the third conductive layer;

a third insulating layer over the second insulating layer; and

a fourth conductive layer over the third insulating layer, the fourth conductive layer comprising the same material as the pixel electrode layer,

wherein the fourth conductive layer has a region overlapping with the first conductive layer and a region overlapping with the first oxide semiconductor layer and the second oxide semiconductor layer,

wherein the pixel electrode layer has a region electrically connected to one of the second conductive layer and the third conductive layer,

wherein the terminal portion comprises:

a fifth conductive layer comprising the same material as the first conductive layer;

the first insulating layer over the fifth conductive layer;

a sixth conductive layer over the first insulating layer, the sixth conductive layer comprising the same material as the second conductive layer and the third conductive layer; and

a seventh conductive layer over the second insulating layer, the seventh conductive layer comprising the same material as the pixel electrode layer,

wherein the seventh conductive layer has a region electrically connected to the fifth conductive layer and the sixth conductive layer,

wherein the seventh conductive layer is in contact with the fifth conductive layer through a first opening, and

wherein the seventh conductive layer is in contact with the sixth conductive layer through a second opening.

Priority Claims (1)
JP 2009-156414 · Jun 30, 2009 · national
Continuity (13)
Continuation 17883882 · Aug 9, 2022
Continuation 17026486 · Sep 21, 2020
Continuation 16385396 · Apr 16, 2019
Continuation 15953795 · Apr 16, 2018
Continuation 15193827 · Jun 27, 2016
Continuation 15057445 · Mar 1, 2016
Continuation 14867636 · Sep 28, 2015
Continuation 14247665 · Apr 8, 2014
Continuation 13967605 · Aug 15, 2013
Continuation 13767335 · Feb 14, 2013
Continuation 13495481 · Jun 13, 2012
Continuation 12826015 · Jun 29, 2010
Related Publication 20230387276A1 · Nov 30, 2023
References Cited (400)
US 4938567A · Chartier · 1990 [cited by applicant]
US 5731856A · Kim et al. · 1998 [cited by applicant]
US 5744864A · Cillessen et al. · 1998 [cited by applicant]
US 5917198A · Maeda · 1999 [cited by applicant]
US 6051453A · Takemura · 2000 [cited by applicant]
US 6106628A · Takahashi · 2000 [cited by applicant]
US 6228174B1 · Takahashi · 2001 [cited by applicant]
US 6254687B1 · Takahashi · 2001 [cited by applicant]
US 6294274B1 · Kawazoe et al. · 2001 [cited by applicant]
US 6297122B1 · Eguchi et al. · 2001 [cited by applicant]
US 6310362B1 · Takemura · 2001 [cited by applicant]
US 6534832B2 · Takemura · 2003 [cited by applicant]
US 6563174B2 · Kawasaki et al. · 2003 [cited by applicant]
US 6649434B2 · Iwata et al. · 2003 [cited by applicant]
US 6680242B2 · Ohtsu et al. · 2004 [cited by applicant]
US 6727522B1 · Kawasaki et al. · 2004 [cited by applicant]
US 7049190B2 · Takeda et al. · 2006 [cited by applicant]
US 7061014B2 · Hosono et al. · 2006 [cited by applicant]
US 7064346B2 · Kawasaki et al. · 2006 [cited by applicant]
US 7105868B2 · Nause et al. · 2006 [cited by applicant]
US 7211825B2 · Shih et al. · 2007 [cited by applicant]
US 7255899B2 · Kusuda · 2007 [cited by applicant]
US 7282782B2 · Hoffman et al. · 2007 [cited by applicant]
US 7297977B2 · Hoffman et al. · 2007 [cited by applicant]
US 7323356B2 · Hosono et al. · 2008 [cited by applicant]
US 7339187B2 · Wager, III et al. · 2008 [cited by applicant]
US 7382421B2 · Hoffman et al. · 2008 [cited by applicant]
US 7385224B2 · Ishii et al. · 2008 [cited by applicant]
US 7397110B2 · Takase et al. · 2008 [cited by applicant]
US 7402506B2 · Levy et al. · 2008 [cited by applicant]
US 7411209B2 · Endo et al. · 2008 [cited by applicant]
US 7453065B2 · Saito et al. · 2008 [cited by applicant]
US 7453087B2 · Iwasaki · 2008 [cited by applicant]
US 7462862B2 · Hoffman et al. · 2008 [cited by applicant]
US 7468304B2 · Kaji et al. · 2008 [cited by applicant]
US 7501293B2 · Ito et al. · 2009 [cited by applicant]
US 7541614B2 · Kato · 2009 [cited by applicant]
US 7564058B2 · Yamazaki et al. · 2009 [cited by applicant]
US 7579224B2 · Kuwabara et al. · 2009 [cited by applicant]
US 7601984B2 · Sano et al. · 2009 [cited by applicant]
US 7652287B2 · Jeong et al. · 2010 [cited by applicant]
US 7659138B2 · Hirakata et al. · 2010 [cited by applicant]
US 7674650B2 · Akimoto et al. · 2010 [cited by applicant]
US 7714321B2 · Kim et al. · 2010 [cited by applicant]
US 7732251B2 · Hoffman et al. · 2010 [cited by applicant]
US 7732819B2 · Akimoto et al. · 2010 [cited by applicant]
US 7791074B2 · Iwasaki · 2010 [cited by applicant]
US 7829444B2 · Yabuta et al. · 2010 [cited by applicant]
US 7858985B2 · Kato · 2010 [cited by applicant]
US 7884360B2 · Takechi et al. · 2011 [cited by applicant]
US 7893431B2 · Kim et al. · 2011 [cited by applicant]
US 7910490B2 · Akimoto et al. · 2011 [cited by applicant]
US 7932521B2 · Akimoto et al. · 2011 [cited by applicant]
US 7935582B2 · Iwasaki · 2011 [cited by applicant]
US 7956361B2 · Iwasaki · 2011 [cited by applicant]
US 7977150B2 · Hirakata et al. · 2011 [cited by applicant]
US 8049219B2 · Kato · 2011 [cited by applicant]
US 8143678B2 · Kim et al. · 2012 [cited by applicant]
US 8154024B2 · Iwasaki · 2012 [cited by applicant]
US 8178926B2 · Nakayama · 2012 [cited by applicant]
US 8193031B2 · Hosoba et al. · 2012 [cited by applicant]
US 8193045B2 · Omura et al. · 2012 [cited by applicant]
US 8202760B2 · Hirakata et al. · 2012 [cited by applicant]
US 8203144B2 · Hoffman et al. · 2012 [cited by applicant]
US 8207014B2 · Sasaki et al. · 2012 [cited by applicant]
US 8258023B2 · Lee · 2012 [cited by applicant]
US 8274077B2 · Akimoto et al. · 2012 [cited by applicant]
US 8304298B2 · Ofuji et al. · 2012 [cited by applicant]
US 8354674B2 · Kimura · 2013 [cited by applicant]
US 8384077B2 · Yano et al. · 2013 [cited by applicant]
US 8389326B2 · Sasaki et al. · 2013 [cited by applicant]
US 8415198B2 · Itagaki et al. · 2013 [cited by applicant]
US 8421070B2 · Kim et al. · 2013 [cited by applicant]
US 8466463B2 · Akimoto et al. · 2013 [cited by applicant]
US 8469703B2 · Kobayashi · 2013 [cited by applicant]
US 8629069B2 · Akimoto et al. · 2014 [cited by applicant]
US 8647031B2 · Hoffman et al. · 2014 [cited by applicant]
US 8647933B2 · Yamazaki · 2014 [cited by applicant]
US 8669550B2 · Akimoto et al. · 2014 [cited by applicant]
US 8790959B2 · Akimoto et al. · 2014 [cited by applicant]
US 8796069B2 · Akimoto et al. · 2014 [cited by applicant]
US 9082857B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9099562B2 · Akimoto et al. · 2015 [cited by applicant]
US 9299807B2 · Sasaki · 2016 [cited by examiner]
US 9397194B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9412768B2 · Sasaki et al. · 2016 [cited by applicant]
US 9985118B2 · Sasaki et al. · 2018 [cited by applicant]
US 10304962B2 · Akimoto et al. · 2019 [cited by applicant]
US 20010029069A1 · Yamazaki et al. · 2001 [cited by applicant]
US 20010046027A1 · Tai et al. · 2001 [cited by applicant]
US 20020056838A1 · Ogawa · 2002 [cited by applicant]
US 20020132454A1 · Ohtsu et al. · 2002 [cited by applicant]
US 20030189401A1 · Kido et al. · 2003 [cited by applicant]
US 20030218215A1 · Takemura · 2003 [cited by applicant]
US 20030218222A1 · Wager, III et al. · 2003 [cited by applicant]
US 20040038446A1 · Takeda et al. · 2004 [cited by applicant]
US 20040127038A1 · Carcia et al. · 2004 [cited by applicant]
US 20050017302A1 · Hoffman · 2005 [cited by applicant]
US 20050199959A1 · Chiang et al. · 2005 [cited by applicant]
US 20050275038A1 · Shih et al. · 2005 [cited by applicant]
US 20060027804A1 · Yamazaki et al. · 2006 [cited by applicant]
US 20060035452A1 · Carcia et al. · 2006 [cited by applicant]
US 20060043377A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060091793A1 · Baude et al. · 2006 [cited by applicant]
US 20060108529A1 · Saito et al. · 2006 [cited by applicant]
US 20060108636A1 · Sano et al. · 2006 [cited by applicant]
US 20060110867A1 · Yabuta et al. · 2006 [cited by applicant]
US 20060113536A1 · Kumomi et al. · 2006 [cited by applicant]
US 20060113539A1 · Sano et al. · 2006 [cited by applicant]
US 20060113541A1 · Takemura · 2006 [cited by applicant]
US 20060113549A1 · Den et al. · 2006 [cited by applicant]
US 20060113565A1 · Abe et al. · 2006 [cited by applicant]
US 20060169973A1 · Isa et al. · 2006 [cited by applicant]
US 20060170111A1 · Isa et al. · 2006 [cited by applicant]
US 20060197092A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060208977A1 · Kimura · 2006 [cited by applicant]
US 20060228974A1 · Thelss et al. · 2006 [cited by applicant]
US 20060231882A1 · Kim et al. · 2006 [cited by applicant]
US 20060238135A1 · Kimura · 2006 [cited by applicant]
US 20060244107A1 · Sugihara et al. · 2006 [cited by applicant]
US 20060284171A1 · Levy et al. · 2006 [cited by applicant]
US 20060284172A1 · Ishii · 2006 [cited by applicant]
US 20060292777A1 · Dunbar · 2006 [cited by applicant]
US 20070024187A1 · Shin et al. · 2007 [cited by applicant]
US 20070046191A1 · Saito · 2007 [cited by applicant]
US 20070052025A1 · Yabuta · 2007 [cited by applicant]
US 20070054507A1 · Kaji et al. · 2007 [cited by applicant]
US 20070072439A1 · Akimoto et al. · 2007 [cited by applicant]
US 20070085075A1 · Yamazaki et al. · 2007 [cited by applicant]
US 20070090365A1 · Hayashi et al. · 2007 [cited by applicant]
US 20070108446A1 · Akimoto · 2007 [cited by applicant]
US 20070152217A1 · Lai et al. · 2007 [cited by applicant]
US 20070172591A1 · Seo et al. · 2007 [cited by applicant]
US 20070187678A1 · Hirao et al. · 2007 [cited by applicant]
US 20070187760A1 · Furuta et al. · 2007 [cited by applicant]
US 20070194379A1 · Hosono et al. · 2007 [cited by applicant]
US 20070207574A1 · Wang et al. · 2007 [cited by applicant]
US 20070241327A1 · Kim et al. · 2007 [cited by applicant]
US 20070252928A1 · Ito et al. · 2007 [cited by applicant]
US 20070272922A1 · Kim et al. · 2007 [cited by applicant]
US 20070287296A1 · Chang · 2007 [cited by applicant]
US 20080006877A1 · Mardilovich et al. · 2008 [cited by applicant]
US 20080007296A1 · Umezaki · 2008 [cited by applicant]
US 20080023698A1 · Li et al. · 2008 [cited by applicant]
US 20080038882A1 · Takechi et al. · 2008 [cited by applicant]
US 20080038929A1 · Chang · 2008 [cited by applicant]
US 20080050595A1 · Nakagawara et al. · 2008 [cited by applicant]
US 20080073653A1 · Iwasaki · 2008 [cited by applicant]
US 20080083950A1 · Pan et al. · 2008 [cited by applicant]
US 20080106191A1 · Kawase · 2008 [cited by applicant]
US 20080119030A1 · Kunii · 2008 [cited by applicant]
US 20080128689A1 · Lee et al. · 2008 [cited by applicant]
US 20080129195A1 · Ishizaki et al. · 2008 [cited by applicant]
US 20080166834A1 · Kim et al. · 2008 [cited by applicant]
US 20080182358A1 · Cowdery-Corvan et al. · 2008 [cited by applicant]
US 20080224133A1 · Park et al. · 2008 [cited by applicant]
US 20080237598A1 · Nakayama · 2008 [cited by applicant]
US 20080254569A1 · Hoffman et al. · 2008 [cited by applicant]
US 20080258139A1 · Ito et al. · 2008 [cited by applicant]
US 20080258140A1 · Lee et al. · 2008 [cited by applicant]
US 20080258141A1 · Park et al. · 2008 [cited by applicant]
US 20080258143A1 · Kim et al. · 2008 [cited by applicant]
US 20080277656A1 · Park et al. · 2008 [cited by applicant]
US 20080296568A1 · Ryu et al. · 2008 [cited by applicant]
US 20080299702A1 · Son et al. · 2008 [cited by applicant]
US 20080308796A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308797A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308804A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308805A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080308806A1 · Akimoto et al. · 2008 [cited by applicant]
US 20080318368A1 · Ryu et al. · 2008 [cited by applicant]
US 20090001881A1 · Nakayama · 2009 [cited by applicant]
US 20090002590A1 · Kimura · 2009 [cited by applicant]
US 20090008639A1 · Akimoto et al. · 2009 [cited by applicant]
US 20090045397A1 · Iwasaki · 2009 [cited by applicant]
US 20090068773A1 · Lai et al. · 2009 [cited by applicant]
US 20090073325A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090114910A1 · Chang · 2009 [cited by applicant]
US 20090134399A1 · Sakakura et al. · 2009 [cited by applicant]
US 20090152506A1 · Umeda et al. · 2009 [cited by applicant]
US 20090152541A1 · Maekawa et al. · 2009 [cited by applicant]
US 20090153762A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090194769A1 · Hiramatsu et al. · 2009 [cited by applicant]
US 20090278122A1 · Hosono et al. · 2009 [cited by applicant]
US 20090280600A1 · Hosono et al. · 2009 [cited by applicant]
US 20090325341A1 · Itagaki et al. · 2009 [cited by applicant]
US 20100006833A1 · Ha et al. · 2010 [cited by applicant]
US 20100012932A1 · Shieh et al. · 2010 [cited by applicant]
US 20100025678A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100032665A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100044701A1 · Sano et al. · 2010 [cited by applicant]
US 20100051938A1 · Hayashi et al. · 2010 [cited by applicant]
US 20100051949A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100065844A1 · Tokunaga · 2010 [cited by applicant]
US 20100078633A1 · Watanabe · 2010 [cited by applicant]
US 20100084648A1 · Watanabe · 2010 [cited by applicant]
US 20100085081A1 · Ofuji et al. · 2010 [cited by applicant]
US 20100092800A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100109002A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100117073A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100148169A1 · Kim et al. · 2010 [cited by applicant]
US 20100155717A1 · Yano et al. · 2010 [cited by applicant]
US 20100171117A1 · Kuwabara et al. · 2010 [cited by applicant]
US 20100175755A1 · Singh et al. · 2010 [cited by applicant]
US 20100182226A1 · Umezaki · 2010 [cited by applicant]
US 20100193785A1 · Kimura · 2010 [cited by applicant]
US 20100203673A1 · Hayashi et al. · 2010 [cited by applicant]
US 20100213459A1 · Shimada et al. · 2010 [cited by applicant]
US 20100252832A1 · Asano et al. · 2010 [cited by applicant]
US 20100264412A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100267198A1 · Yabuta et al. · 2010 [cited by applicant]
US 20100295042A1 · Yano et al. · 2010 [cited by applicant]
US 20110003418A1 · Sakata et al. · 2011 [cited by applicant]
US 20110003427A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110003429A1 · Oikawa et al. · 2011 [cited by applicant]
US 20110003430A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110006302A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110008930A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110042669A1 · Kim et al. · 2011 [cited by applicant]
US 20110053322A1 · Sasaki et al. · 2011 [cited by applicant]
US 20110097844A1 · Takechi et al. · 2011 [cited by applicant]
US 20110101342A1 · Kim et al. · 2011 [cited by applicant]
US 20110104851A1 · Akimoto et al. · 2011 [cited by applicant]
US 20110111558A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110121290A1 · Akimoto et al. · 2011 [cited by applicant]
US 20110183463A1 · Kim et al. · 2011 [cited by applicant]
US 20120126226A1 · Kuwabara et al. · 2012 [cited by applicant]
US 20120132911A1 · Shimada et al. · 2012 [cited by applicant]
US 20120220078A1 · Hosoba et al. · 2012 [cited by applicant]
US 20120319103A1 · Lee · 2012 [cited by applicant]
US 20130146452A1 · Yano et al. · 2013 [cited by applicant]
US 20160268437A1 · Yamazaki et al. · 2016 [cited by applicant]
US 20190051759A1 · Akimoto et al. · 2019 [cited by applicant]
US 20190326444A1 · Akimoto et al. · 2019 [cited by applicant]
CN 001638170A · 2005 [cited by applicant]
EP 1501122A · 2005 [cited by applicant]
EP 1624333A · 2006 [cited by applicant]
EP 1703573A · 2006 [cited by applicant]
EP 1737044A · 2006 [cited by applicant]
EP 1770788A · 2007 [cited by applicant]
EP 1976018A · 2008 [cited by applicant]
EP 1995787A · 2008 [cited by applicant]
EP 1998373A · 2008 [cited by applicant]
EP 1998375A · 2008 [cited by applicant]
EP 2159845A · 2010 [cited by applicant]
EP 2184783A · 2010 [cited by applicant]
EP 2226847A · 2010 [cited by applicant]
EP 2339639A · 2011 [cited by applicant]
EP 3614442A · 2020 [cited by applicant]
JP 60198861A · 1985 [cited by applicant]
JP 63208896A · 1988 [cited by applicant]
JP 63210022A · 1988 [cited by applicant]
JP 63210023A · 1988 [cited by applicant]
JP 63210024A · 1988 [cited by applicant]
JP 63215519A · 1988 [cited by applicant]
JP 63239117A · 1988 [cited by applicant]
JP 63265818A · 1988 [cited by applicant]
JP 01501100 · 1989 [cited by applicant]
JP 02156676A · 1990 [cited by applicant]
JP 05053147A · 1993 [cited by applicant]
JP 05251705A · 1993 [cited by applicant]
JP 06069919B · 1994 [cited by applicant]
JP 08160451A · 1996 [cited by applicant]
JP 08264794A · 1996 [cited by applicant]
JP 08330647A · 1996 [cited by applicant]
JP 09266179A · 1997 [cited by applicant]
JP 10098007A · 1998 [cited by applicant]
JP 11505377 · 1999 [cited by applicant]
JP 2000044236A · 2000 [cited by applicant]
JP 2000150900A · 2000 [cited by applicant]
JP 2000173945A · 2000 [cited by applicant]
JP 2000357586A · 2000 [cited by applicant]
JP 2001156008A · 2001 [cited by applicant]
JP 2002076356A · 2002 [cited by applicant]
JP 2002093822A · 2002 [cited by applicant]
JP 2002289859A · 2002 [cited by applicant]
JP 2002319321A · 2002 [cited by applicant]
JP 2003086000A · 2003 [cited by applicant]
JP 2003086808A · 2003 [cited by applicant]
JP 2003209054A · 2003 [cited by applicant]
JP 2003282436A · 2003 [cited by applicant]
JP 2004103957A · 2004 [cited by applicant]
JP 2004214616A · 2004 [cited by applicant]
JP 2004273614A · 2004 [cited by applicant]
JP 2004273732A · 2004 [cited by applicant]
JP 2004297048A · 2004 [cited by applicant]
JP 2005285890A · 2005 [cited by applicant]
JP 2006080494A · 2006 [cited by applicant]
JP 2006128654A · 2006 [cited by applicant]
JP 2006165527A · 2006 [cited by applicant]
JP 2006165531A · 2006 [cited by applicant]
JP 2006229212A · 2006 [cited by applicant]
JP 2007041260A · 2007 [cited by applicant]
JP 2007073558A · 2007 [cited by applicant]
JP 2007096055A · 2007 [cited by applicant]
JP 2007103918A · 2007 [cited by applicant]
JP 2007123861A · 2007 [cited by applicant]
JP 2007150158A · 2007 [cited by applicant]
JP 2007235153A · 2007 [cited by applicant]
JP 2007529119 · 2007 [cited by applicant]
JP 2008039843A · 2008 [cited by applicant]
JP 2008042088A · 2008 [cited by applicant]
JP 2008053356A · 2008 [cited by applicant]
JP 2008124408A · 2008 [cited by applicant]
JP 2008130838A · 2008 [cited by applicant]
JP 2008172244A · 2008 [cited by applicant]
JP 2008199005A · 2008 [cited by applicant]
JP 2008243928A · 2008 [cited by applicant]
JP 2008281988A · 2008 [cited by applicant]
JP 2008282913A · 2008 [cited by applicant]
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Prins.M et al., “A Ferroelectric Transparent Thin-Film Transistor”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. [cited by applicant]
Nakamura.M et al., “The phase relations in the In2O3—Ga2ZnO4—ZnO system at 1350° C.”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315. [cited by applicant]
Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State … [cited by applicant]
Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. [cited by applicant]
Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492. [cited by applicant]
International Search Report (Application No. PCT/JP2010/060699) dated Jul. 27, 2010. [cited by applicant]
Written Opinion (Application No. PCT/JP2010/060699) dated Jul. 27, 2010. [cited by applicant]
Fortunato.E et al., “Wide-Bandgap High-Mobility ZnO Thin-Film Transistors Produced at Room Temperature”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. [cited by applicant]
Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. [cited by applicant]
Ikeda.T et al., “Full-Functional System Liquid Crystal Display Using Cg-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. [cited by applicant]
Park.J et al., “Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment”, Appl. Phys. Lett. (Applied Physics Letters), Jun. 26, 2007, vol. 90, No. 2… [cited by applicant]
Takahashi.M et al., “Theoretical Analysis of IgZo Transparent Amorphous Oxide Semiconductor”, IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. [cited by applicant]
Hayashi.R et al., “42.1: Invited Paper: Improved Amorphous In—Ga—Zn-O TFTs”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. [cited by applicant]
Masuda.S et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. [cited by applicant]
Asakuma.N et al., “Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation With Ultraviolet Lamp”, Journal of Sol-Gel Science and Technology, 2003, vol. 26, pp. 181-184. [cited by applicant]
Osada.T et al., “15.2: Development of Driver-Integrated Panel using Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 184-187. [cited by applicant]
Nomura.K et al., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films”, Appl. Phys. Lett. (Applied Physics Letters) Sep. 13, 2004,… [cited by applicant]
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355. [cited by applicant]
Son.K et al., “42.4L: Late-News Paper: 4 Inch QVGA AMOLED Driven by The Threshold Voltage Controlled Amorphous GiZo (Ga2O3—In2O3—ZnO) TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20… [cited by applicant]
Lee.J et al., “World's Largest (15-INCH) XGA AMLCD Panel Using IgZo Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. [cited by applicant]
Nowatari.H et al., “60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDS”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. [cited by applicant]
Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer”, Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. [cited by applicant]
Tsuda.K et al., “Ultra Low Power Consumption Technologies for Mobile TFT-LCDs ”, IDW '02 : Proceedings of The 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. [cited by applicant]
Van de Walle.C, “Hydrogen as a Cause of Doping in Zinc Oxide”, Phys. Rev. Lett. (Physical Review Letters), Jul. 31, 2000, vol. 85, No. 5, pp. 1012-1015. [cited by applicant]
Fung.T et al., “2-D Numerical Simulation of High Performance Amorphous In—Ga—Zn—O TFTs for Flat Panel Displays”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, The Japan Society of Applied Physics. [cited by applicant]
Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, N… [cited by applicant]
Park.J et al., “High performance amorphous oxide thin film transistors with self-aligned top-gate structure”, IEDM 09: Technical Digest of International Electron Devices Meeting, Dec. 7, 2009, pp. 191-194. [cited by applicant]
Kurokawa. Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. [cited by applicant]
Ohara.H et al., “Amorphous In—Ga—Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 227-230, The Japan Society of Applied Physics. [cited by applicant]
Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition: The “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. [cited by applicant]
Cho.D et al., “21.2:AL and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. [cited by applicant]
Lee.M et al., “15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. [cited by applicant]
Jin.D et al., “65.2:Distinguished Paper: World-Largest (6.5″) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technical… [cited by applicant]
Sakata.J et al., “Development of 4.0-In. AMOLED Display With Driver Circuit Using Amorphous In—Ga—Zn-Oxide TFTs”, IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. [cited by applicant]
Park.J et al., “Amorphous Indium-Gallium-Zinc Oxide TFTs and Their Application for Large Size AMOLED”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 275-278. [cited by applicant]
Park.S et al., “Challenge to Future Displays: Transparent AM-OLED Driven By Peald Grown ZnO TFT”, IMID '07 Digest, 2007, pp. 1249-1252. [cited by applicant]
Godo.H et al., “Temperature Dependence of Characteristics and Electronic Structure for Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. [cited by applicant]
Osada.T et al., “Development of Driver-Integrated Panel Using Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 33-36. [cited by applicant]
Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AMLCDS”, J. Soc. Inf. Display (Journal of The Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. [cited by applicant]
Hosono.H, “68.3:Invited Paper: Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. [cited by applicant]
Godo.H et al., “P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. [cited by applicant]
Ohara.H et al., “21.3:4.0 In. QVGA AMOLED Display Using In—Ga—Zn-Oxide TFTs With a Novel Passivation Layer”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 284-287. [cited by applicant]
Miyasaka.M, “SUFTLA Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. [cited by applicant]
Chern.H et al., “An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. [cited by applicant]
Kikuchi.H et al., “39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 5… [cited by applicant]
Asaoka.Y et al., “29.1:Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. [cited by applicant]
Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED ”, IDW '06 : Proceedings of The 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. [cited by applicant]
Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers… [cited by applicant]
Nakamura.M, “Synthesis of Homologous Compound with New Long-Period Structure”, NIRIM Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. [cited by applicant]
Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. [cited by applicant]
Kimizuka.N et al., “Spinel, YbFe2O4, and Yb2Fe3O7 Types of Structures for Compounds in the In2O3 and Sc2O3—A2O3—Bo Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at Temperatures Over 1000° C.”, Journal of Soli… [cited by applicant]
Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. [cited by applicant]
Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. [cited by applicant]
Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. [cited by applicant]