Patent Assignment
Reel/Frame 032170/0532
Assignment of Assignor's Interest
Recorded: 2014-02-07
Pages: 20
Assignor
ASML MASKTOOLS B.V.
Executed: 2013-12-20
Assignee
ASML NETHERLANDS B.V.
DE RUN 6501, VELDHOVEN, NL-5504 DR, NETHERLANDS
Covered Properties
(61)
Method of Fine Feature Edge Tuning with Optically-Half Toned Mask
Application:
60/066,396 →
Method of Patterning Line Features with High Transmission, Attenuated Phase Shift Masks
Application:
60/078,281 →
Method for controlling mask features
Application:
60/182,367 →
Method of improving photomask geometry
Application:
60/185,046 →
Method and apparatus for fast aerial image simulation
Application:
60/231,953 →
Assist features for use in lithographic projection
Application:
60/244,657 →
Method and apparatus for minimizing optical proximity effects
Application:
60/271,722 →
Rule-based dipole partitioning for electronic design layouts
Application:
60/288,461 →
Multiple coherency optimized exposures for printing near 1:1, sub-wavelength pitch features using very high transmission attenuated PSM
Application:
60/313,487 →
use of phase edges for sub-resolution assist features on high NA, off-axis illumination imaging systems
Application:
60/325,211 →
Method for 2D pattern profile calibration and verification with application to model-based optical proximity correction
Application:
60/327,302 →
Method and apparatus for removing residual assist features
Application:
60/333,503 →
Method of gate shrink dipole decomposition
Application:
60/366,537 →
Chromeless phase lithography (CPL) pattern definition by spatial frequency doubling
Application:
60/366,544 →
Method for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
Application:
60/366,545 →
Orientation dependent shielding for dipole imaging performance
Application:
60/398,574 →
Method of achieving CD linearity control for full-chip CPL manufacturing
Application:
60/409,599 →
Lens aberration compensation by illumination source optimization
Application:
60/425,309 →
Model-based layout conversion method for double dipole lithography
Application:
60/425,323 →
OPC mask design method for deep sub-wavelength optical lithography
Application:
60/439,807 →
Method of optical proximity correction design & optimization for deep sub-wavelength contact hole mask
Application:
60/439,808 →
Method of simultaneous optimization for NA-delta exposure settings and scattering bars OPC using actual device layout
Application:
60/483,102 →
Method for compensating for scatter bar loss
Application:
60/483,105 →
Method for generating assist features utilizing an image intensity map
Application:
60/483,106 →
Model based placement of phase-balanced scattering bars to achieve lithography patterning requirements for sub-wavelength pitch features
Application:
60/500,260 →
Scattering bar OPC application method for sub-half wavelength lithography patterning
Application:
60/500,272 →
Eigenfunction filtering for interference map technology
Application:
60/515,708 →
Transmission tuning for forbidden pitch
Application:
60/517,082 →
Model OPC implementation with generalized illumination
Application:
60/517,083 →
Extending interference mapping to improve the depth of focus and exposure latitude
Application:
60/530,656 →
Lithography illumination optimized with polarization
Application:
60/530,662 →
Method of manufacturing reliability checking & verification for lithography process using a calibrated eigen decomposition model
Application:
60/539,991 →
Method of predicting minimizing model OPC deviation due to mix/match exposure tools using a calibrated eigen decomposition model
Application:
60/539,997 →
Optical proximity correction using chamfers and rounding at corners
Application:
60/560,615 →
Method of model based scattering bars for enhanced depth of focus quarter-wavelength lithography
Application:
60/603,560 →
Vector eigen decomposition based OPC model
Application:
60/605,716 →
Full-chip manufacturing reliability check and correction (MRC2)-the first step to DFM with low K1 lithography
Application:
60/609,243 →
Use of elliptical 3D diffusion kernels for improved critical dimension calibration
Application:
60/647,433 →
Full chip illumination for contact hole and via masks
Application:
60/654,962 →
Double exposure lithography (DEL) techniques with mutual scattering bar trimming and polarization
Application:
60/670,285 →
Method of mask feature pitch decomposition for multiple exposures
Application:
60/692,574 →
CPL mask with applications
Application:
60/707,557 →
Method of generating OPC rules with interference mapping
Application:
60/734,317 →
Double exposure technique and geometry decomposition method
Application:
60/754,312 →
Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using less complex DOEs with optimized exposure settings
Application:
60/763,384 →
Method of multiple stages model calibration for optical proximity correction
Application:
60/774,224 →
Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process
Application:
60/776,199 →
Method of dark field double dipole lithography (DDL)
Application:
60/789,560 →
Method of a multi-tone, CPL-type of PSM manufacturing process for blank materials with low etch selectivity
Application:
60/818,544 →
Model based double patterning algorithm
Application:
60/837,325 →
Method for creating optimal test patterns for optical model calibration and for selecting suitable calibration test patterns from arbitrary layout
Application:
60/837,326 →
Translate geometrical design rules into boundary in imaging signal space
Application:
60/837,327 →
Method for empirical modeling of resist development and pattern etch effects in photolithography
Application:
60/840,953 →
Method of using anchoring features for pattern pitch-split decomposition
Application:
60/844,073 →
Method of performing model-based OPC for pattern decomposed features
Application:
60/844,074 →
Method of decomposing geometries based on feature pitch
Application:
60/844,079 →
Empirical predictions of line width roughness and resist pattern failure and their incorporation in a photolithographic simulator
Application:
60/857,495 →
Method of using calibrated pupil kernels to enhance lithography model calibration accuracy
Application:
60/857,497 →
Method of coloring a target pattern for DPT by splitting polygons into multiple polygons by fragmenting the negative areas of pattern
Application:
60/858,702 →
Method of compact display combined with property-table-view for a complex relational data structure
Application:
60/960,757 →
Method of Improved Hierarchical Xml Database
Application:
60/979,559 →
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 30, 2001
From: BASELMANS, JOHANNES JACOBUS MATHEUS; SCHLUTER, MARKUS; FLAGELLO, DONIS GEORGE; SOCHA, ROBERT JOHN
To: ASM LITHOGRAPHY B. V.; ASML MASK TOOLS NETHERLANDS B.V.
Reel/Frame 011650/0412 →
Assignment of Assignor's Interest
Mar 28, 2002
From: ASM LITHOGRAPHY B.V.; ASML MASKTOOLS NETHERLANDS B.V.
To: ASML NETHERLANDS B.V.; ASML MASKTOOLS B.V.
Reel/Frame 012736/0974 →